US5474877A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for developing a resist pattern
Assignee: NEC Corp
•
Filing: 1994-02-24
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Granted: 1995-12-12
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Expires: 2014-02-24
Abstract
Abstract A photoresist pattern developed on a semiconductor substrate is rinsed by rinsing liquid. At this rinsing step, the rinsing liquid is heated to be decreased in surface tension, so that the collapse of the photoresist pattern is avoided.
Inventors
- 👤 Katsumi Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:27
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/30; G03F7/3021
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
108 words
A method for developing a photoresist pattern, comprising the steps of: coating a photoresist film on a semiconductor substrate; exposing said photoresist film on said semiconductor substrate to a predetermined pattern; supplying developer on said photoresist film on said semiconductor substrate to develop said photoresist pattern; heating rinsing liquid to its boiling point or within several degrees thereof; and thereafter supplying said heated rinsing liquid on said photoresist pattern developed on said semiconductor substrate to rinse said photoresist pattern, while separately heating a surface of said semiconductor substrate having said photoresist pattern thereon to a predetermined temperature of 50° to 100° C. during said rinsing liquid supplying step.
Claim 2
Independent Claim
108 words
A method for developing a photoresist pattern, comprising the steps of: coating a photoresist film on a semiconductor substrate; exposing said photoresist film on said semiconductor substrate to a predetermined pattern; supplying developer on said photoresist film on said semiconductor substrate to develop said photoresist pattern; heating rinsing liquid to its boiling point or within several degrees thereof; and thereafter supplying said heated rinsing liquid on said photoresist pattern developed on said semiconductor substrate to rinse said photoresist pattern, while separately heating a surface of said semiconductor substrate having said photoresist pattern thereon to a predetermined temperature of 50° to 100° C. during said rinsing liquid supplying step.
Claim 3
Dependent Claim
35 words
A method for developing a photoresist pattern, according to claim 1, wherein: said surface of said semiconductor substrate is heated to said predetermined temperature by heating a support on which said semiconductor substrate is supported.
Claim 4
Dependent Claim
35 words
A method for developing a photoresist pattern, according to claim 1, wherein: said rinsing liquid is at least one of water and alcohol; and said predetermined temperature is the boiling point of said rinsing liquid.
Claim 5
Dependent Claim
41 words
A method for developing a photoresist pattern, according to claim 1, wherein: said semiconductor substrate is fixed on a first semiconductor substrate holder at said developer supplying step, and on a second semiconductor substrate holder at said rinsing liquid supplying step.
Claim 6
Dependent Claim
30 words
A method for developing a photoresist pattern, according to claim 1, wherein: said surface of said semiconductor substrate is heated to be said predetermined temperature by an infrared ray lamp.
Claim 7
Dependent Claim
37 words
A method for developing a photoresist pattern, according to claim 1, wherein said heating of said surface is effected by supplying steam on said photoresist pattern developed on said semiconductor substrate during said rinsing liquid supplying step.
References Cited (Backward Citations)
JPS5258374A
Cited
JPS58102942A
Cited
EP0224273A2
Cited
JPS62189462A
Cited
JPS62274720A
Cited
JPS632046A
Cited
JPS63197331A
Cited
US5212043A
Cited
JPH03263816A
Cited
US5223377A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-11 | 1999-06-12 | 1999-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-11 | 2003-06-12 | 2003-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-11 | 2007-06-12 | 2007-12-12 | $7700.00 | Window Closed / Lapsed |