US5474650A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for dry etching
Assignee: Renesas Electronics Corp
•
Filing: 1994-09-07
•
Granted: 1995-12-12
•
Expires: 2014-09-07
Abstract
Abstract A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
Inventors
- 👤 Takao Kumihashi
- 👤 Kazunori Tsujimoto
- 👤 Shinichi Tachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:55
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32192; H01J37/32431; H01J37/3244; H01J37/32449; H01J37/32798; H01J37/32816; H01J37/32834; H01J37/32917; H01J37/32935; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/244; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3322; H01J2237/334; H01J2237/3343; Y; Y10; Y10S; Y10S438/00; Y10S438/914
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
51 words
A dry etching method comprising the steps of: changing an effective exhaust rate in an etching chamber during a dry etching process from a first effective exhaust rate to a second effective exhaust rate; wherein the first effective exhaust rate is either larger or smaller than the second effective exhaust rate.
Claim 2
Dependent Claim
51 words
A dry etching method comprising the steps of: changing an effective exhaust rate in an etching chamber during a dry etching process from a first effective exhaust rate to a second effective exhaust rate; wherein the first effective exhaust rate is either larger or smaller than the second effective exhaust rate.
Claim 3
Dependent Claim
28 words
A dry etching method according to claim 1, wherein the effective exhaust rate is changed progressively from the first effective exhaust rate to the second effective exhaust rate.
Claim 4
Dependent Claim
17 words
A dry etching method according to claim 1, wherein the dry etching process includes an overetching step.
Claim 5
Dependent Claim
27 words
A dry etching method according to claim 1, wherein the effective exhaust rate is changed at least once to etch a material having a plurality of layers.
Claim 6
Dependent Claim
30 words
A dry etching method according to claim 1, wherein the changing step changes the effective exhaust rate from 800-100,000 liters/second to 1-700 liters/second or from 1-700 liters/second to 800-100,000 liters/second.
Claim 7
Dependent Claim
50 words
A dry etching method according to claim 5, wherein a total gas flow into the etching chamber is kept in a 200-100,000 sccm range, and a pressure in the etching chamber during the etching process is changed from 0.01-5 mTorr to 10-1,000 mTorr or from 10-1,000 mTorr to 0.01-5 mTorr.
Claim 8
Dependent Claim
50 words
A dry etching method according to claim 5, wherein a pressure in the etching chamber is kept in a 1-1,000 mTorr range, and a total gas flow into the etching chamber during the etching process is changed from 1-100 sccm to 200-100,000 sccm or from 200-100,000 sccm to 1-100 sccm.
Claim 9
Dependent Claim
30 words
A dry etching method according to claim 1, wherein the changing step changes the effective exhaust rate from 800-100,000 liters/second to 1-500 liters/second or from 1-500 liters/second to 800-100,000 liters/second.
Claim 10
Dependent Claim
30 words
A dry etching method according to claim 1, wherein the changing step changes the effective exhaust rate from 1,300-100,000 liters/second to 1-700 liters/second or from 1-700 liters/second to 1,300-100,000 liters/second.
Claim 11
Dependent Claim
30 words
A dry etching method according to claim 1, wherein the changing step changes the effective exhaust rate from 1,300-100,000 liters/second to 1-500 liters/second or from 1-500 liters/second to 1,300-100,000 liters/second.
Claim 12
Dependent Claim
95 words
A dry etching apparatus comprising: an etching chamber; a gas introducing means to introduce at least one kind of gas into the etching chamber; a gas exhausting means to exhaust gas from the etching chamber; a pressure measuring means to measure a pressure in the etching chamber; and a plasma generating means to generate a plasma in the etching chamber; wherein an effective exhaust rate of the gas exhausting means is at least 600 liters/second, and the pressure in the etching chamber can be set in a 4-25 mTorr range by the pressure measuring means.
Claim 13
Dependent Claim
95 words
A dry etching apparatus comprising: an etching chamber; a gas introducing means to introduce at least one kind of gas into the etching chamber; a gas exhausting means to exhaust gas from the etching chamber; a pressure measuring means to measure a pressure in the etching chamber; and a plasma generating means to generate a plasma in the etching chamber; wherein an effective exhaust rate of the gas exhausting means is at least 600 liters/second, and the pressure in the etching chamber can be set in a 4-25 mTorr range by the pressure measuring means.
Claim 14
Dependent Claim
84 words
A dry etching method comprising the steps of: introducing a material to be processed into an etching chamber; introducing at least one kind of gas into the etching chamber; setting a pressure in the etching chamber to 4-25 mTorr by controlling a gas exhausting means for the etching chamber; forming the gas introduced in the etching chamber into a plasma to process the material in the etching chamber; and setting an effective exhaust rate of the gas exhausting means to at least 600 liters/second.
Claim 15
Dependent Claim
84 words
A dry etching method comprising the steps of: introducing a material to be processed into an etching chamber; introducing at least one kind of gas into the etching chamber; setting a pressure in the etching chamber to 4-25 mTorr by controlling a gas exhausting means for the etching chamber; forming the gas introduced in the etching chamber into a plasma to process the material in the etching chamber; and setting an effective exhaust rate of the gas exhausting means to at least 600 liters/second.
Claim 16
Dependent Claim
50 words
A dry etching method comprising the steps of: in a main etching step in which planar portions of a material to be processed are etched, performing etching at an effective exhaust rate of 800-100,000 liters/second; and in an overetching step, performing etching at an effective exhaust rate of 1-700 liters/second.
Claim 17
Dependent Claim
50 words
A dry etching method comprising the steps of: in a main etching step in which planar portions of a material to be processed are etched, performing etching at an effective exhaust rate of 800-100,000 liters/second; and in an overetching step, performing etching at an effective exhaust rate of 1-700 liters/second.
Claim 18
Dependent Claim
50 words
A dry etching method comprising the steps of: in a main etching step in which planar portions of a material to be processed are etched, performing etching at an effective exhaust rate of 800-100,000 liters/second; and in an overetching step, performing etching at an effective exhaust rate of 1-500 liters/second.
Claim 19
Dependent Claim
50 words
A dry etching method comprising the steps of: in a main etching step in which planar portions of a material to be processed are etched, performing etching at an effective exhaust rate of 800-100,000 liters/second; and in an overetching step, performing etching at an effective exhaust rate of 1-500 liters/second.
References Cited (Backward Citations)
EP0119455A2
Cited
US4579623A
Cited
JPS6161423A
Cited
JPS6365628A
Cited
EP0283306A2
Cited
JPH02105413A
Cited
US5110408A
Cited
US5242539A
Cited
US5354418A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-11 | 1999-06-12 | 1999-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-11 | 2003-06-12 | 2003-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-11 | 2007-06-12 | 2007-12-12 | $7700.00 | Window Closed / Lapsed |