US5354418A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for dry etching
Assignee: Renesas Electronics Corp
•
Filing: 1994-01-03
•
Granted: 1994-10-11
•
Expires: 2014-01-03
Abstract
Abstract A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameter for controlling the first and second conditions are contemplated.
Inventors
- 👤 Takao Kumihashi
- 👤 Kazunori Tsujimoto
- 👤 Shinichi Tachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:57
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32192; H01J37/32431; H01J37/3244; H01J37/32449; H01J37/32798; H01J37/32816; H01J37/32834; H01J37/32917; H01J37/32935; H01J37/32972; H10P50/244; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3322; H01J2237/334; H01J2237/3343; Y; Y10; Y10S; Y10S438/00; Y10S438/913; Y10S438/978
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
73 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber to change between a condition in which a deposit film is produced on an etching pattern side wall and a condition in which a deposit film is not produced on an etching pattern side wall of the body.
Claim 2
Dependent Claim
73 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber to change between a condition in which a deposit film is produced on an etching pattern side wall and a condition in which a deposit film is not produced on an etching pattern side wall of the body.
Claim 3
Dependent Claim
28 words
A dry etching method as claimed in claim 1, wherein the controlling step is performed so that the effective pumping speed of the vacuum chamber is periodically changed.
Claim 4
Dependent Claim
82 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber so that an etching pattern side wall of the body changes between a condition in which the etching pattern side wall is formed in a tapered shape and a condition in which the etching pattern side wall is formed in one of a vertical and undercut shape.
Claim 5
Dependent Claim
82 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber so that an etching pattern side wall of the body changes between a condition in which the etching pattern side wall is formed in a tapered shape and a condition in which the etching pattern side wall is formed in one of a vertical and undercut shape.
Claim 6
Dependent Claim
65 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber so that the number of gas particles entering the vacuum chamber can either increase and become greater than a predetermined value or decrease and become smaller than the predetermined value.
Claim 7
Dependent Claim
65 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber so that the number of gas particles entering the vacuum chamber can either increase and become greater than a predetermined value or decrease and become smaller than the predetermined value.
Claim 8
Dependent Claim
44 words
A dry etching method as claimed in claim 4, wherein the predetermined value is determined based on at least one of the type of etching gas, a condition for changing the gas to a plasma, and the constitution of the body to be etched.
Claim 9
Dependent Claim
23 words
A dry etching method as claimed in claim 4, wherein the predetermined value is three times the number of particles entering the body.
Claim 10
Dependent Claim
48 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber to change an angle of an etching pattern side wall of the body.
Claim 11
Dependent Claim
48 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber to change an angle of an etching pattern side wall of the body.
Claim 12
Dependent Claim
91 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; etching a layer of the body to form a mask pattern; overetching the layer to remove etching residue; and controlling the effective pumping speed of the vacuum chamber to change between a condition in which a deposit film is produced on an etching pattern side wall and a condition in which a deposit film is not produced on an etching pattern side wall of the body.
Claim 13
Dependent Claim
91 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; etching a layer of the body to form a mask pattern; overetching the layer to remove etching residue; and controlling the effective pumping speed of the vacuum chamber to change between a condition in which a deposit film is produced on an etching pattern side wall and a condition in which a deposit film is not produced on an etching pattern side wall of the body.
Claim 14
Dependent Claim
29 words
A dry etching method as claimed in claim 8, wherein the effective pumping speed at the overetching step is different from the effective pumping speed at the non-overetching step.
Claim 15
Dependent Claim
49 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber based on the area of an underlayer which is exposed by the etching gas.
Claim 16
Dependent Claim
49 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and controlling the effective pumping speed of the vacuum chamber based on the area of an underlayer which is exposed by the etching gas.
Claim 17
Dependent Claim
39 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and changing the effective pumping speed of the vacuum chamber in an etching step.
Claim 18
Dependent Claim
39 words
A dry etching method, comprising the steps of: providing a body to be etched in a vacuum chamber; supplying etching gas to the vacuum chamber; and changing the effective pumping speed of the vacuum chamber in an etching step.
Claim 19
Dependent Claim
22 words
A dry etching method as claimed in claim 11, wherein the effective pumping speed is changed according to a stepped ladder waveform.
References Cited (Backward Citations)
EP0119455A2
Cited
US4579623A
Cited
JPS6161423A
Cited
JPS6365628A
Cited
EP0283306A2
Cited
JPS6432633A
Cited
JPH02105413A
Cited
US5110408A
Cited
US5242539A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-10 | 1998-04-11 | 1998-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-10 | 2002-04-11 | 2002-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-10 | 2006-04-11 | 2006-10-11 | $7700.00 | Window Closed / Lapsed |