Taper etching method

Abstract

Abstract PURPOSE:To enable taper etching by treating a substrate at two kinds or more of temperatures, the temperature of anisotropic working conditions and a temperature capable of controlling a side etching rate on etching. CONSTITUTION:The temperature of a substrate 1 is changed with the treating time within a temperature range from 0 deg.C to -150 deg.C during etching treatment. The substrate 1 is held at a temperature such as -5 deg.C, and etched for a time such as approximately two min. Consequently, etching progresses at the rate of 0.5mum/min in the depth direction, and side etching is generated at the rate of 0.1mum/ min to the lower section of a sidewall. The temperature of the substrate 1 is changed to -15 deg.C, and etching is continued for two min under the same conditions. As a result, opening areas among patterns are spread in an upper section in the patterns 4. Accordingly, taper etching is enabled.

Inventors

• 👤 Shinichi Taji
• 👤 Kazunori Tsujimoto
• 👤 Sadayuki Okudaira

Bibliographic Details