Method for manufacturing a transistor of a semiconductor device

Claim 1

A method for manufacturing a transistor of a semiconductor device comprised of the following steps: forming a mask layer on the top of a polysilicon film for a gate electrode, and then forming a mask pattern by means of a lithography process and said mask layer etching process; forming a polysilicon pattern having an inclined side by etching the polysilicon film by means of an etching process utilizing said mask pattern as a barrier to etching until a silicon substrate is exposed; etching the mask pattern to be the same size as said polysilicon pattern by means of an etching process, and then implanting highly concentrated impurities into the exposed silicon substrate to form source and drain regions; depositing an oxide film on the top of the entire structure, and then forming an oxide spacer by etching said oxide film by means of an etching process; removing said mask pattern by means of an etching process, and then forming a transition metal film on said exposed polysilicon pattern and said silicon substrate surface portion; and removing said oxide spacer by means of an etching process, and then forming a gate electrode by etching the exposed side of said polysilicon pattern by means of an etching process utilizing said transition metal film as a barrier to etching, and thereafter implanting low concentrated impurities into the source and drain regions.

Claim 2

A method for manufacturing a transistor of a semiconductor device comprised of the following steps: forming a mask layer on the top of a polysilicon film for a gate electrode, and then forming a mask pattern by means of a lithography process and said mask layer etching process; forming a polysilicon pattern having an inclined side by etching the polysilicon film by means of an etching process utilizing said mask pattern as a barrier to etching until a silicon substrate is exposed; etching the mask pattern to be the same size as said polysilicon pattern by means of an etching process, and then implanting highly concentrated impurities into the exposed silicon substrate to form source and drain regions; depositing an oxide film on the top of the entire structure, and then forming an oxide spacer by etching said oxide film by means of an etching process; removing said mask pattern by means of an etching process, and then forming a transition metal film on said exposed polysilicon pattern and said silicon substrate surface portion; and removing said oxide spacer by means of an etching process, and then forming a gate electrode by etching the exposed side of said polysilicon pattern by means of an etching process utilizing said transition metal film as a barrier to etching, and thereafter implanting low concentrated impurities into the source and drain regions.

Claim 9

A method for manufacturing a transistor of a semiconductor device comprised of the following steps: forming a mask layer on top of a polysilicon film for a gate electrode, and then forming a mask pattern by means of a lithography process and said mask layer etching process; forming a polysilicon pattern having an inclined side by etching the polysilicon film by means of an etching process utilizing said mask pattern as a barrier to etching until a silicon substrate is exposed; etching the mask layer pattern to be the same size as the polysilicon film pattern by means of the etching process, and then depositing an oxide film on the top of the entire structure; forming an oxide spacer by etching the deposited oxide film by means of an etching process, and then removing the mask layer pattern by means of an etching process; implanting highly concentrated impurities into the exposed silicon substrate to form source and drain regions, and then forming a transition metal film on the exposed polysilicon pattern and the silicon substrate surface portion; removing the oxide spacer by means of an etching process, and then forming a gate electrode by etching the exposed side of said polysilicon pattern using an etching process utilizing said transition metal film serves as a barrier to etching; and implanting low concentrated impurities into said source and drain regions, and then slantwise implanting the impurities of another type.

Claim 10

A method for manufacturing a transistor of a semiconductor device comprised of the following steps: forming a mask layer on top of a polysilicon film for a gate electrode, and then forming a mask pattern by means of a lithography process and said mask layer etching process; forming a polysilicon pattern having an inclined side by etching the polysilicon film by means of an etching process utilizing said mask pattern as a barrier to etching until a silicon substrate is exposed; etching the mask layer pattern to be the same size as the polysilicon film pattern by means of the etching process, and then depositing an oxide film on the top of the entire structure; forming an oxide spacer by etching the deposited oxide film by means of an etching process, and then removing the mask layer pattern by means of an etching process; implanting highly concentrated impurities into the exposed silicon substrate to form source and drain regions, and then forming a transition metal film on the exposed polysilicon pattern and the silicon substrate surface portion; removing the oxide spacer by means of an etching process, and then forming a gate electrode by etching the exposed side of said polysilicon pattern using an etching process utilizing said transition metal film serves as a barrier to etching; and implanting low concentrated impurities into said source and drain regions, and then slantwise implanting the impurities of another type.