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US5471067A
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Semiconductor metal contacting structure and a light emitting device
Assignee: Sony Corp
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Filing: 1993-06-18
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Granted: 1995-11-28
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Expires: 2013-06-18
Abstract
Abstract A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer.
Inventors
- 👤 Masao Ikeda
- 👤 Satoshi Ito
- 👤 Yoshino Iochi
- 👤 Takao Miyajima
- 👤 Masafumi Ozawa
- 👤 Katsuhiro Akimoto
- 👤 Akira Ishibash
- 👤 Futoshi Hiei
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:29
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H10H20/81; H10H20/811; H10H20/812; H01S5/30; H01S5/305; H01S5/3068; H01S5/32; H01S5/327; H01S5/34; H01S5/347; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
86 words
A semiconductor metal contacting structure comprising: a first p-type compound semiconductor layer; a second p-type compound semiconductor layer on said first p-type compound semiconductor layer; a contacting metal on said second p-type compound semiconductor layer; a multiquantum well layer in a depletion layer produced between said first p-type compound semiconductor layer and said second p-type compound semiconductor layer, said multiquantum well layer having a plurality of quantum wells and a plurality of barriers, at least one of said quantum wells and said barriers having different thicknesses.
Claim 2
Dependent Claim
86 words
A semiconductor metal contacting structure comprising: a first p-type compound semiconductor layer; a second p-type compound semiconductor layer on said first p-type compound semiconductor layer; a contacting metal on said second p-type compound semiconductor layer; a multiquantum well layer in a depletion layer produced between said first p-type compound semiconductor layer and said second p-type compound semiconductor layer, said multiquantum well layer having a plurality of quantum wells and a plurality of barriers, at least one of said quantum wells and said barriers having different thicknesses.
Claim 3
Dependent Claim
23 words
A semiconductor metal contacting structure according to claim 1, wherein said multiquantum well layer forming quantum levels which become a path for holes.
Claim 4
Dependent Claim
33 words
A semiconductor metal contacting structure according to claim 1, wherein said first p-type compound semiconductor layer being made of p-type ZnSe and said second p-type compound semiconductor layer being made of p-type ZnTe.
Claim 5
Dependent Claim
101 words
A semiconductor metal contacting structure comprising: a first n-type compound semiconductor layer; a second n-type compound semiconductor layer on said first n-type compound semiconductor layer; a contacting metal on said second n-type compound semiconductor layer; a multiquantum well layer in a depletion layer produced between said first n-type compound semiconductor layer and said second n-type compound semiconductor layer, wherein said first n-type compound semiconductor layer having an impurity concentration which is higher in a portion adjacent to an interface between said first n-type compound semiconductor layer and said second n-type compound semiconductor layer than in a portion spaced from said interface.
Claim 6
Dependent Claim
101 words
A semiconductor metal contacting structure comprising: a first n-type compound semiconductor layer; a second n-type compound semiconductor layer on said first n-type compound semiconductor layer; a contacting metal on said second n-type compound semiconductor layer; a multiquantum well layer in a depletion layer produced between said first n-type compound semiconductor layer and said second n-type compound semiconductor layer, wherein said first n-type compound semiconductor layer having an impurity concentration which is higher in a portion adjacent to an interface between said first n-type compound semiconductor layer and said second n-type compound semiconductor layer than in a portion spaced from said interface.
Claim 7
Dependent Claim
39 words
A semiconductor metal contacting structure according to claim 4, wherein said impurity concentration of said first n-type compound semiconductor layer gradually increases toward the interface between said first n-type compound semiconductor layer and said second n-type compound semiconductor layer.
Claim 8
Dependent Claim
23 words
A semiconductor metal contacting structure according to claim 4, wherein said multiquantum well layer forming quantum levels which become a path for electrons.
Claim 9
Dependent Claim
124 words
A light emitting device comprising: a substrate; an n-type cladding layer on said substrate; an active layer on said n-type cladding layer; a p-type cladding layer on said active layer; and a semiconductor metal contacting structure, wherein said semiconductor metal contacting structure comprises a first p-type compound semiconductor layer; a second p-type compound semiconductor layer on said first p-type compound semiconductor layer; a contacting metal on said second p-type compound semiconductor layer; a multiquantum well layer in a depletion layer produced between said first p-type compound semiconductor layer and said second p-type compound semiconductor layer, said multiquantum well layer having a plurality of quantum wells and a plurality of barriers, at least one of said quantum wells and said barriers having a different thickness.
Claim 10
Dependent Claim
124 words
A light emitting device comprising: a substrate; an n-type cladding layer on said substrate; an active layer on said n-type cladding layer; a p-type cladding layer on said active layer; and a semiconductor metal contacting structure, wherein said semiconductor metal contacting structure comprises a first p-type compound semiconductor layer; a second p-type compound semiconductor layer on said first p-type compound semiconductor layer; a contacting metal on said second p-type compound semiconductor layer; a multiquantum well layer in a depletion layer produced between said first p-type compound semiconductor layer and said second p-type compound semiconductor layer, said multiquantum well layer having a plurality of quantum wells and a plurality of barriers, at least one of said quantum wells and said barriers having a different thickness.
Claim 11
Dependent Claim
16 words
A light emitting device according to claim 7, wherein said multiquantum well layer forming quantum levels.
Claim 12
Dependent Claim
32 words
A light emitting device according to claim 8, wherein said first p-type compound semiconductor layer being made of p-type ZnSe, and said second p-type compound semiconductor layer being made of p-type ZnTe.
Claim 13
Dependent Claim
55 words
A light emitting device according to claim 7, wherein said first p-type compound semiconductor layer has an impurity concentration which is higher in a portion adjacent to an interface between said first p-type compound semiconductor layer and said second p-type compound semiconductor layer than that of other portions of the first p-type compound semiconductor layer.
Claim 14
Dependent Claim
39 words
A light emitting device according to claim 7, wherein said first p-type compound semiconductor layer has an impurity concentration which gradually increases toward an interface between said first p-type compound semiconductor layer and said second p-type compound semiconductor layer.
Claim 15
Dependent Claim
22 words
A light emitting device according to claim 7, wherein thicknesses of said quantum wells increase toward said second p-type compound semiconductor layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-11-27 | 1999-05-29 | 1999-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-27 | 2003-05-29 | 2003-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-27 | 2007-05-29 | 2007-11-28 | $7700.00 | Window Closed / Lapsed |