EP0334637A2
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EP
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A semiconductor device
Assignee: Toshiba Corp
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Filing: 1989-03-22
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Granted: —
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Expires: 2009-03-22
Abstract
Abstract A semiconductor device with the function of passing electric current between a GaAs semiconductor layer (103) and an InGaAlP semiconductor layer (101) both having the same conductivity type is disclosed. The device includes a higher carrier density region (102) with the carrier density equal to or more than 5x10¹⁷ cm⁻³ and a thickness in a range from 400Å to 800Å in at least a part of the InGaAlP layer (101) adjoining the GaAs layer (103). As a result, good ohmic contact is achieved and the semiconductor device has a lower operating voltage and a satisfactory thermal characteristic.
Inventors
- 👤 Masayuki C/O Patent Division Ishikawa
- 👤 Kazuhiko C/O Patent Division Itaya
- 👤 Genichi C/O Patent Division Hatakoshi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 14:03
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; H10H20/01; H10H20/011; H10H20/013; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
147 words
A semiconductor device comprising: a GaAs layer (103) having a first conductivity type; and an In l-x-y Ga y Al x P (0 ≦ x,y ≦ 1) layer (101) of said first conductivity type in contact with said GaAs layer, wherein an electric current may pass between said layers; characterized in that a high carrier density region (102) of said first conductivity type with a carrier density equal to or more than 5 x 10¹⁷ cm⁻³ and a thickness in a range from 400Å to 800Å provided at least in part of said In l-x-y Ga y Al x P (0 ≦ x,y ≦ 1) layer (101) adjoining said GaAs layer (103) wherein said high carrier density region (102) has a band gap energy equal to or less than the band gap energy of the remainder of said In l-x-y Ga y Al x P layer (101).
Claim 2
Dependent Claim
147 words
A semiconductor device comprising: a GaAs layer (103) having a first conductivity type; and an In l-x-y Ga y Al x P (0 ≦ x,y ≦ 1) layer (101) of said first conductivity type in contact with said GaAs layer, wherein an electric current may pass between said layers; characterized in that a high carrier density region (102) of said first conductivity type with a carrier density equal to or more than 5 x 10¹⁷ cm⁻³ and a thickness in a range from 400Å to 800Å provided at least in part of said In l-x-y Ga y Al x P (0 ≦ x,y ≦ 1) layer (101) adjoining said GaAs layer (103) wherein said high carrier density region (102) has a band gap energy equal to or less than the band gap energy of the remainder of said In l-x-y Ga y Al x P layer (101).
Claim 3
Dependent Claim
35 words
A semiconductor device according to claim 1, characterized in that said GaAs semiconductor layer (103) and said In l-x-y Ga y Al x P (0 ≦ x,y ≦ 1) semiconductor layer (101) are both p-type.
Claim 4
Dependent Claim
33 words
A semiconductor device according to claim 1, characterised in that said high carrier density region (102) has a carrier density in a range from 5 x 10¹⁷ cm⁻³ to 3 x 10¹⁹ cm⁻³.
Claim 5
Dependent Claim
186 words
A semiconductor light emitting device comprising: a double heterojunction structure having an n-type In l-w-z Ga z Al w P (0 ≦ w,z ≦ 1) clad layer (402), an In l-s-t Ga t Al s P (0 < s,t < 1) active layer (403) and a p-type In l-u-v Ga v Al u P (0 ≦ u, v ≦ 1) clad layer (404); and a p-type GaAs ohmic contact layer (407) over said p-type In l-u-v Ga v Al u P (0 ≦ u,v ≦ 1) clad layer (404); characterised in that a high carrier density region (405) formed of a p-type In l-x-y Ga y Al x P (0 ≦ x,y ≦ 1) and having a carrier density equal to or more than 5 x 10¹⁷ cm⁻³ and a thickness in a range from 400Å to 800Å provided between said p-type In l-u-v Ga v Al u P (0 ≦ u,v ≦ 1) clad layer (404) and said p-type GaAs ohmic contact layer (407) wherein said high carrier density region has a band gap energy equal to or less than said p-type clad layer (404).
Claim 6
Dependent Claim
186 words
A semiconductor light emitting device comprising: a double heterojunction structure having an n-type In l-w-z Ga z Al w P (0 ≦ w,z ≦ 1) clad layer (402), an In l-s-t Ga t Al s P (0 < s,t < 1) active layer (403) and a p-type In l-u-v Ga v Al u P (0 ≦ u, v ≦ 1) clad layer (404); and a p-type GaAs ohmic contact layer (407) over said p-type In l-u-v Ga v Al u P (0 ≦ u,v ≦ 1) clad layer (404); characterised in that a high carrier density region (405) formed of a p-type In l-x-y Ga y Al x P (0 ≦ x,y ≦ 1) and having a carrier density equal to or more than 5 x 10¹⁷ cm⁻³ and a thickness in a range from 400Å to 800Å provided between said p-type In l-u-v Ga v Al u P (0 ≦ u,v ≦ 1) clad layer (404) and said p-type GaAs ohmic contact layer (407) wherein said high carrier density region has a band gap energy equal to or less than said p-type clad layer (404).
Claim 7
Dependent Claim
35 words
A semiconductor light emitting device according to claim 4, characterised in that said high carrier density region (405) has a carrier density in a range from 5 x 10¹⁷ cm⁻³ to 3 x 10¹⁹ cm⁻³.
Claim 8
Dependent Claim
223 words
A semiconductor light emitting device, comprising: a double heterojunction structure having an n-type In l-w-z Ga z Al w P (0 ≦ w,z ≦ 1) clad layer (602) an In l-s-t Ga t Al s P (0 ≦ s,t ≦ 1) layer (603); a first P type In l-r-s Ga s Al r P (0 ≦ r,s ≦ 1) clad layer (604), a p-type In l-p-q Ga q Al p P (0 ≦ p,q ≦ 1) etching stopper layer (605) and a second p-type In l-u-v Ga v Al u P (0 ≦ u,v ≦ 1) clad layer (606) in strip form; and a p-type GaAs ohmic contact layer (609) over said second p-type In l-u-v Ga v Al u P (0 ≦ u,v ≦ 1) clad layer (606); characterised in that a high carrier density region (607) formed of a p-type In l-x-y Ga y Al x P (0 ≦ x,y ≦ 1) and having a carrier density equal to or more than 5 x 10¹⁷ cm⁻³ and a thickness in a range of 400Å to 800Å provided between said second p-type In l-u-v Ga v Al u P clad layer (606) and said p-type GaAs ohmic contact layer (609) wherein said high carrier density layer has a band gap energy equal to or less than said second p-type clad layer (606).
Claim 9
Dependent Claim
223 words
A semiconductor light emitting device, comprising: a double heterojunction structure having an n-type In l-w-z Ga z Al w P (0 ≦ w,z ≦ 1) clad layer (602) an In l-s-t Ga t Al s P (0 ≦ s,t ≦ 1) layer (603); a first P type In l-r-s Ga s Al r P (0 ≦ r,s ≦ 1) clad layer (604), a p-type In l-p-q Ga q Al p P (0 ≦ p,q ≦ 1) etching stopper layer (605) and a second p-type In l-u-v Ga v Al u P (0 ≦ u,v ≦ 1) clad layer (606) in strip form; and a p-type GaAs ohmic contact layer (609) over said second p-type In l-u-v Ga v Al u P (0 ≦ u,v ≦ 1) clad layer (606); characterised in that a high carrier density region (607) formed of a p-type In l-x-y Ga y Al x P (0 ≦ x,y ≦ 1) and having a carrier density equal to or more than 5 x 10¹⁷ cm⁻³ and a thickness in a range of 400Å to 800Å provided between said second p-type In l-u-v Ga v Al u P clad layer (606) and said p-type GaAs ohmic contact layer (609) wherein said high carrier density layer has a band gap energy equal to or less than said second p-type clad layer (606).
Claim 10
Dependent Claim
35 words
A semiconductor light emitting device according to claim 6, characterized in that said high carrier density region (607) has a carrier density in a range from 5 x 10¹⁷ cm⁻³ to 3 x 10¹⁹ cm⁻³.
References Cited (Backward Citations)
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