Quantum effect semiconductor device

Abstract

Abstract PURPOSE:To improve high speed operation performance by providing a barrier layer having a composition wherein the barrier height gradually decreases toward an adjacent semiconductor Iayer, and a resonance tunneling barrier layer constituted of a quantum well composed of a wall layer. CONSTITUTION:A resonance tunneling hot electron transistor is provided with a resonance tunneling barrier layer 10 of an emitter 6 side. The barrier layer 10 is constituted of a quantum well composed of a well layer low surrounded by barrier layers 10B1, 10B2. The molar ratios of Al contained in the barrier layer 10B1 and 10B2 are selected so as to gradually decrease toward the emitter Iayer 6 or a base layer 4. When the bottom of conduction band of the emitter layer 6 is made to almost coincide with the resonance level of the barrier layer 10 by applying a voltage, resonance tunneling is caused. As the result of resonance tunneling of electron in the thin part of the barriers 10B1 and 10B2, emitter current rapidly increases. Thereby, high speed operation performance can be improved.

Inventors

• 👤 Kenichi Imamura
• 👤 健一 今村

Bibliographic Details