Abstract A method is disclosed for the production of polycrystalline silicon thin films characterized by performing heat treatment of amorphous silicon thin films deposited on a substrate at a relatively low temperature of between 300 DEG and 600 DEG C. under a pressure ranging from 10-3 to 1 torr. The method can provide polycrystalline silicon thin films having increased grain sizes of about 60-300 mu m. In accordance with the method, glass or ceramic substrates can be used instead of an expensive quartz substrate. SiH4 gas can also be used instead of Si2H6 gas as a source gas. The polycrystalline silicon thin films disclosed have an electron and positive hole mobility closer to that of the level of single crystals, and thus the development of the SOI element having high performance such as TFT for LCD, or TFT for SRAM, and the like may be greatly advanced.
In a method of producing a polycrystalline silicon thin film having a grain size of about 60-300 μm comprising depositing an amorphous silicon thin film onto a substrate and subjecting the resulting as-deposited amorphous silicon thin film to heat treatment, the improvement which comprises carrying out said heat treatment at a temperature between 450° and 550° C. under a vacuum pressure ranging from 10 -3 to 1 torr, and placing the substrate on which said amorphous silicon thin film is deposited on a copper or brass susceptor in a heating furnace.
Claim 2
Dependent Claim
91 words
In a method of producing a polycrystalline silicon thin film having a grain size of about 60-300 μm comprising depositing an amorphous silicon thin film onto a substrate and subjecting the resulting as-deposited amorphous silicon thin film to heat treatment, the improvement which comprises carrying out said heat treatment at a temperature between 450° and 550° C. under a vacuum pressure ranging from 10 -3 to 1 torr, and placing the substrate on which said amorphous silicon thin film is deposited on a copper or brass susceptor in a heating furnace.
Claim 3
Dependent Claim
32 words
The method according to claim 1, wherein the deposition is carried out by low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition using SiH 4 gas as a source gas.
Claim 4
Dependent Claim
31 words
The method according to claim 2, wherein the SiH 4 gas is selected from the group consisting of an Ar-, He-, H 2 - and N 2 -diluted SiH 4 gas.
Claim 5
Dependent Claim
24 words
The method according to claim 1, wherein the substrate is selected from the group consisting of glass, ceramic, and quartz plates, and Si wafers.
Claim 6
Dependent Claim
38 words
The method according to claim 4, wherein the glass, ceramic, and quartz plates, and Si wafers are coated with an amorphous material selected from the group consisting of SiO 2 , silicon nitride, silicon oxynitride, and tantalum oxide.