Patent US5465003A successfully refreshed from Google Patents.
US5465003A
Expired / Lapsed
US
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Planarized local oxidation by trench-around technology
Assignee: United Microelectronics Corp
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Filing: 1994-12-01
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Granted: 1995-11-07
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Expires: 2014-12-01
Abstract
Abstract A new planarized device isolation structure within a semiconductor substrate is described. The device isolation structure comprises narrow device isolation regions each consisting of a deep trench having a thin oxide covering its sidewalls and bottom and filled with silicon oxide, wide device isolation regions each consisting of two deep trenches flanking a shallow trench wherein each deep trench has a thin oxide covering its sidewalls and bottom and is filled with silicon oxide and wherein the shallow trench is filled with a field oxide. The top surface of the narrow and wide device isolation regions and the semiconductor substrate is planarized.
Inventors
- 👤 Water Lur
- 👤 Anna Su
- 👤 Neng H. Shen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:24
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/10; H10W10/17; H10P; H10P95/00; H10P95/06; H10P95/062; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0145; H10W10/0147
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
52 words
A device isolation structure within a semiconductor substrate comprising: narrow device isolation regions each consisting of a deep trench; and wide device isolation regions each consisting of two deep trenches flanking a shallow trench; wherein the top surface of said narrow and wide device isolation regions and said semiconductor substrate is planarized.
Claim 2
Independent Claim
52 words
A device isolation structure within a semiconductor substrate comprising: narrow device isolation regions each consisting of a deep trench; and wide device isolation regions each consisting of two deep trenches flanking a shallow trench; wherein the top surface of said narrow and wide device isolation regions and said semiconductor substrate is planarized.
Claim 3
Dependent Claim
33 words
The device of claim 1 wherein a thin oxide covers the sidewalls and bottom of each of said deep trenches and wherein each of said deep trenches is filled with a silicon oxide.
Claim 4
Dependent Claim
46 words
The device of claim 1 wherein a thin oxide covers the sidewalls and bottom of each of said deep trenches and wherein each of said deep trenches is filled with a silicon oxide and wherein each of said shallow trenches is filled with a field oxide.
Claim 5
Dependent Claim
14 words
The device of claim 3 wherein said field oxide has no bird's beak structure.
Claim 6
Dependent Claim
20 words
The device of claim 1 wherein channel stop regions are formed underlying each of said deep and said shallow trenches.
Claim 7
Independent Claim
95 words
A device isolation structure within a semiconductor substrate comprising: narrow device isolation regions each consisting of a deep trench having a thin oxide covering its sidewalls and bottom and filled with silicon oxide; wide device isolation regions each consisting of two deep trenches flanking a shallow trench wherein each deep trench has a thin oxide covering its sidewalls and bottom and is filled with silicon oxide and wherein said shallow trench is filled with a field oxide; wherein the top surface of said narrow and wide device isolation regions and said semiconductor substrate is planarized.
Claim 8
Independent Claim
95 words
A device isolation structure within a semiconductor substrate comprising: narrow device isolation regions each consisting of a deep trench having a thin oxide covering its sidewalls and bottom and filled with silicon oxide; wide device isolation regions each consisting of two deep trenches flanking a shallow trench wherein each deep trench has a thin oxide covering its sidewalls and bottom and is filled with silicon oxide and wherein said shallow trench is filled with a field oxide; wherein the top surface of said narrow and wide device isolation regions and said semiconductor substrate is planarized.
Claim 9
Dependent Claim
14 words
The device of claim 6 wherein said field oxide has no bird's beak structure.
Claim 10
Dependent Claim
20 words
The device of claim 6 wherein channel stop regions are formed underlying each of said deep and said shallow trenches.
Claim 11
Independent Claim
100 words
A device isolation structure within a semiconductor substrate comprising: narrow device isolation regions each consisting of a deep trench having a thin oxide covering its sidewalls and bottom and filled with silicon oxide; wide device isolation regions each consisting of two deep trenches flanking a shallow trench wherein each deep trench has a thin oxide covering its sidewalls and bottom and is filled with silicon oxide and wherein said shallow trench is filled with a field oxide having no bird's beak structure; wherein the top surface of said narrow and wide device isolation regions and said semiconductor substrate is planarized.
Claim 12
Independent Claim
100 words
A device isolation structure within a semiconductor substrate comprising: narrow device isolation regions each consisting of a deep trench having a thin oxide covering its sidewalls and bottom and filled with silicon oxide; wide device isolation regions each consisting of two deep trenches flanking a shallow trench wherein each deep trench has a thin oxide covering its sidewalls and bottom and is filled with silicon oxide and wherein said shallow trench is filled with a field oxide having no bird's beak structure; wherein the top surface of said narrow and wide device isolation regions and said semiconductor substrate is planarized.
Claim 13
Dependent Claim
20 words
The device of claim 9 wherein channel stop regions are formed underlying each of said deep and said shallow trenches.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-06 | 1999-05-08 | 1999-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-06 | 2003-05-08 | 2003-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-06 | 2007-05-08 | 2007-11-07 | $7700.00 | Window Closed / Lapsed |