US5108946A
Expired / Lapsed
US
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Method of forming planar isolation regions
Assignee: Semiconductor Components Industries LLC
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Filing: 1990-07-27
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Granted: 1992-04-28
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Expires: 2010-07-27
Abstract
Abstract A method of forming planar isolation regions in semiconductor structures includes providing a semiconductor substrate and forming a semiconductor layer thereon. A dielectric layer comprising at least two different dielectric materials is disposed on the semiconductor layer and a trench is etched therethrough and into the semiconductor layer. Dielectric sidewalls are formed in the trench which is then filled by selectively forming depositing polycrystalline silicon therein. The semiconductor material is then at least partially oxidized to form the planar isolation region. The isolation regions disclosed herein may be used for both intradevice and interdevice isolation.
Inventors
- 👤 Peter J. Zdebel
- 👤 Barbara Vasquez
- 👤 Hang M. Liaw
- 👤 Christian A. Seelbach
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:02
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
152 words
A method of forming planar isolation regions in semiconductor structures comprising the steps of: providing a semiconductor substrate; forming a semiconductor layer on said substrate; forming a dielectric layer on said semiconductor layer, said dielectric layer comprising at least one layer of a first dielectric material and at least one layer of a second dielectric material; patterning and etching a trench through said dielectric layer and into said semiconductor layer; forming a trench liner layer in said trench, said trench liner layer being comprised of the first dielectric material; removing said trench liner layer excepting that disposed on the sidewalls of said trench; selectively forming polycrystalline silicon in said trench, said polycrystalline silicon being formed in CVD reactor by reacting a silicon containing gas and a halogen containing gas in a hydrogen atmosphere, neither of said gases containing carbon; and oxidizing at least a portion of said polycrystalline silicon in said trench.
Claim 2
Independent Claim
152 words
A method of forming planar isolation regions in semiconductor structures comprising the steps of: providing a semiconductor substrate; forming a semiconductor layer on said substrate; forming a dielectric layer on said semiconductor layer, said dielectric layer comprising at least one layer of a first dielectric material and at least one layer of a second dielectric material; patterning and etching a trench through said dielectric layer and into said semiconductor layer; forming a trench liner layer in said trench, said trench liner layer being comprised of the first dielectric material; removing said trench liner layer excepting that disposed on the sidewalls of said trench; selectively forming polycrystalline silicon in said trench, said polycrystalline silicon being formed in CVD reactor by reacting a silicon containing gas and a halogen containing gas in a hydrogen atmosphere, neither of said gases containing carbon; and oxidizing at least a portion of said polycrystalline silicon in said trench.
Claim 3
Dependent Claim
32 words
The method of claim 1 wherein the semiconductor substrate comprises doped silicon, the semiconductor layer comprises silicon, the first dielectric material comprises an oxide and the second dielectric material comprises a nitride.
Claim 4
Dependent Claim
30 words
The method of claim 2 wherein the forming a trench liner step includes forming a layer of the second dielectric material in the trench and on the first dielectric material.
Claim 5
Dependent Claim
16 words
The method of claim 2 further including the formation of a channel stop beneath the trench.
Claim 6
Dependent Claim
17 words
The method of claim 2 further including the formation of a buried layer for a bipolar device.
Claim 7
Dependent Claim
23 words
The method of claim 2 wherein the patterning and etching step includes etching the trench through the semiconductor layer and into the substrate.
Claim 8
Dependent Claim
17 words
The method of claim 2 wherein frontside contact is made to the substrate through the isolation trench.
Claim 9
Independent Claim
146 words
A method of forming planar isolation regions in semiconductor structures comprising the steps of: providing a semiconductor substrate; forming a dielectric layer on said semiconductor substrate, said dielectric layer comprising at least one layer of a first dielectric material and at least one layer of a second dielectric material; patterning and etching a trench through said dielectric layer and into said semiconductor substrate; forming a trench liner layer in said trench, said trench liner layer being comprised of the first dielectric material; removing said trench liner layer excepting that disposed on the sidewalls of said trench; selectively forming polycrystalline silicon in said trench, said polycrystalline silicon being formed in a CVD reactor by reacting a silicon containing gas and a halogen containing gas in a hydrogen atmosphere, neither of said gases containing carbon; and oxidizing at least a portion of said polycrystalline silicon in said trench.
Claim 10
Independent Claim
146 words
A method of forming planar isolation regions in semiconductor structures comprising the steps of: providing a semiconductor substrate; forming a dielectric layer on said semiconductor substrate, said dielectric layer comprising at least one layer of a first dielectric material and at least one layer of a second dielectric material; patterning and etching a trench through said dielectric layer and into said semiconductor substrate; forming a trench liner layer in said trench, said trench liner layer being comprised of the first dielectric material; removing said trench liner layer excepting that disposed on the sidewalls of said trench; selectively forming polycrystalline silicon in said trench, said polycrystalline silicon being formed in a CVD reactor by reacting a silicon containing gas and a halogen containing gas in a hydrogen atmosphere, neither of said gases containing carbon; and oxidizing at least a portion of said polycrystalline silicon in said trench.
Claim 11
Dependent Claim
27 words
The method of claim 8 wherein the semiconductor substrate comprises doped silicon, the first dielectric material comprises an oxide and the second dielectric material comprises a nitride.
Claim 12
Dependent Claim
30 words
The method of claim 9 wherein the forming a trench liner step includes forming a layer of the second dielectric material in the trench and on the first dielectric material.
Claim 13
Dependent Claim
16 words
The method of claim 9 further including the formation of a channel stop beneath the trench.
Claim 14
Dependent Claim
20 words
The method of claim 9 further including the formation of a buried layer in the substrate for a bipolar device.
Claim 15
Dependent Claim
17 words
The method of claim 9 wherein frontside contact is made to the substrate through the isolation trench.
Claim 16
Independent Claim
174 words
A method of forming isolation regions in semiconductor structures comprising the steps of; providing a silicon substrate; forming an epitaxial silicon layer on said substrate; forming a dielectric layer on said epitaxial silicon layer, said dielectric layer comprising a thermal oxide layer, a nitride layer disposed on said thermal oxide layer and another oxide layer disposed on said nitride layer; patterning and etching a trench through said dielectric layer and into said epitaxial silicon layer; forming a trench liner layer of oxide in said trench; forming a conformal layer of nitride on the substrate including in said trench; removing said conformal layer and said trench liner layer excepting that disposed on the sidewalls of said trench; selectively growing polycrystalline silicon in said trench, said polycrystalline silicon being grown in a CVD reactor by reacting a silicon containing gas and halogen containing gas in a hydrogen atmosphere, neither of said gases containing carbon; removing the top oxide layer of said dielectric layer; and oxidizing at least a portion of said polycrystalline silicon in said trench.
Claim 17
Independent Claim
174 words
A method of forming isolation regions in semiconductor structures comprising the steps of; providing a silicon substrate; forming an epitaxial silicon layer on said substrate; forming a dielectric layer on said epitaxial silicon layer, said dielectric layer comprising a thermal oxide layer, a nitride layer disposed on said thermal oxide layer and another oxide layer disposed on said nitride layer; patterning and etching a trench through said dielectric layer and into said epitaxial silicon layer; forming a trench liner layer of oxide in said trench; forming a conformal layer of nitride on the substrate including in said trench; removing said conformal layer and said trench liner layer excepting that disposed on the sidewalls of said trench; selectively growing polycrystalline silicon in said trench, said polycrystalline silicon being grown in a CVD reactor by reacting a silicon containing gas and halogen containing gas in a hydrogen atmosphere, neither of said gases containing carbon; removing the top oxide layer of said dielectric layer; and oxidizing at least a portion of said polycrystalline silicon in said trench.
Claim 18
Dependent Claim
16 words
The method of claim 14 further including the formation of a channel stop beneath the trench.
Claim 19
Dependent Claim
19 words
The method of claim 14 including the formation of a buried layer in the substrate for a bipolar device.
Claim 20
Dependent Claim
24 words
The method of claim 14 wherein the patterning and etching step includes etching the trench through the epitaxial silicon layer and into the substrate.
Claim 21
Dependent Claim
17 words
The method of claim 14 wherein frontside contact is made to the substrate through the isolation trench.
Claim 22
Dependent Claim
19 words
The method of claim 2 further including the formation of a well in the substrate for an MOS device.
Claim 23
Dependent Claim
19 words
The method of claim 9 further including the formation of a well in the substrate for an MOS device.
Claim 24
Dependent Claim
19 words
The method of claim 14 further including the formation of a well in the substrate for an MOS device.
References Cited (Backward Citations)
JPS56157044A
Cited
JPS59204252A
Cited
JPS60133739A
Cited
US4526631A
Cited
EP0172772A2
Cited
US4786960A
Cited
US4745081A
Cited
US4786615A
Cited
US5008208A
Cited
US4963506A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-28 | 1995-10-28 | 1996-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-28 | 1999-10-28 | 2000-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-28 | 2003-10-28 | 2004-04-28 | $7700.00 | Window Closed / Lapsed |