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Apparatus for growing a thin metallic film

Assignee: NTT Inc
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Filing: 1994-02-23
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Granted: 1995-10-31
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Expires: 2014-02-23
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Abstract

Abstract Gold or copper is grown on a substrate by a chemical vapor deposition method using a β-ketonato type metal complex of gold or copper as a starting material and introducing the starting material to the substrate using as a carrier gas a mixed gas composed of hydrogen and a substance which can bond to the starting material in a state where electron is donated from the substance to the starting material to form a molecular compound.

Inventors

  • 👤 Nobuyoshi Awaya
  • 👤 Yoshinobu Arita

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 01:10
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/4557; C23C16/06; C23C16/18; C23C16/448; C23C16/4481; C23C16/4482; C23C16/45565

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 134 words
An apparatus for growing a thin metallic film, comprising: a reaction chamber capable of being evacuated; substrate holding means for holding and heating a substrate, said substrate holding means being provided in said reaction chamber; a starting material container for containing a starting material; an additive container for containing an additive; heating means for evaporating said starting material in said starting material container; gas ejecting means having gas ejecting orifices for ejecting a vapor of said starting material together with a reducing gas and said additive, said gas ejecting means being connected to said starting material container and said additive container; heating means for increasing a vapor pressure of said additive; and heat exchanging means for circulating a heat exchange medium to the proximity of said gas ejecting orifices of said gas ejecting means.
Claim 2
Independent Claim 134 words
An apparatus for growing a thin metallic film, comprising: a reaction chamber capable of being evacuated; substrate holding means for holding and heating a substrate, said substrate holding means being provided in said reaction chamber; a starting material container for containing a starting material; an additive container for containing an additive; heating means for evaporating said starting material in said starting material container; gas ejecting means having gas ejecting orifices for ejecting a vapor of said starting material together with a reducing gas and said additive, said gas ejecting means being connected to said starting material container and said additive container; heating means for increasing a vapor pressure of said additive; and heat exchanging means for circulating a heat exchange medium to the proximity of said gas ejecting orifices of said gas ejecting means.
Claim 3
Independent Claim 115 words
An apparatus for growing a thin metallic film, comprising: a reaction chamber capable of being evacuated; substrate holding means for holding and heating a substrate, said substrate holding means being provided in said reaction chamber; a starting material container for containing a starting material; burning means for burning hydrogen with oxygen to produce steam; gas ejecting means having gas ejecting orifices for ejecting a vapor of said starting material together with a reducing gas and said steam, said gas ejecting means being connected to said starting material container and said burning means; and heat exchanging means for circulating a heat exchange medium to the proximity of said gas ejecting orifices of said gas ejecting means.
Claim 4
Independent Claim 115 words
An apparatus for growing a thin metallic film, comprising: a reaction chamber capable of being evacuated; substrate holding means for holding and heating a substrate, said substrate holding means being provided in said reaction chamber; a starting material container for containing a starting material; burning means for burning hydrogen with oxygen to produce steam; gas ejecting means having gas ejecting orifices for ejecting a vapor of said starting material together with a reducing gas and said steam, said gas ejecting means being connected to said starting material container and said burning means; and heat exchanging means for circulating a heat exchange medium to the proximity of said gas ejecting orifices of said gas ejecting means.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-10-30 1999-05-01 1999-10-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-10-30 2003-05-01 2003-10-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-10-30 2007-05-01 2007-10-31 $7700.00 Window Closed / Lapsed

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