Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures

Claim 1

A method of obtaining high quality passivation layers on silicon carbide surfaces, the method comprising: forming a sacrificial layer selected from the group consisting of silicon nitride and boron-doped silicon carbide on a silicon carbide portion of a device structure; and oxidizing the sacrificial layer to substantially consume the sacrificial layer to produce an oxide passivation layer on the silicon carbide portion that is substantially free of dopants and other species that would otherwise degrade the electrical integrity of the oxide layer.

Claim 2

A method of obtaining high quality passivation layers on silicon carbide surfaces, the method comprising: forming a sacrificial layer selected from the group consisting of silicon nitride and boron-doped silicon carbide on a silicon carbide portion of a device structure; and oxidizing the sacrificial layer to substantially consume the sacrificial layer to produce an oxide passivation layer on the silicon carbide portion that is substantially free of dopants and other species that would otherwise degrade the electrical integrity of the oxide layer.

Claim 3

A method of obtaining high quality passivation layers on silicon carbide surfaces, the method comprising: depositing a thin boron-doped silicon carbide epitaxial layer on a p-type silicon carbide portion of a device structure; forming a sacrificial layer of silicon on the boron-doped epitaxial layer of silicon carbide; and oxidizing the sacrificial layer of silicon to substantially consume the sacrificial silicon layer to produce an oxide passivation layer on the p-type silicon carbide portion that is substantially free of dopants and other species that would otherwise degrade the electrical integrity of the oxide layer, and wherein the boron-doped silicon carbide layer is thick enough to prevent aluminum in the p-type silicon carbide portion of the device structure from reaching the resulting oxide, while otherwise remaining as thin as possible.

Claim 4

A method of obtaining high quality passivation layers on silicon carbide surfaces, the method comprising: depositing a thin boron-doped silicon carbide epitaxial layer on a p-type silicon carbide portion of a device structure; forming a sacrificial layer of silicon on the boron-doped epitaxial layer of silicon carbide; and oxidizing the sacrificial layer of silicon to substantially consume the sacrificial silicon layer to produce an oxide passivation layer on the p-type silicon carbide portion that is substantially free of dopants and other species that would otherwise degrade the electrical integrity of the oxide layer, and wherein the boron-doped silicon carbide layer is thick enough to prevent aluminum in the p-type silicon carbide portion of the device structure from reaching the resulting oxide, while otherwise remaining as thin as possible.

Claim 5

A method of obtaining high quality passivation layers on silicon carbide surfaces, the method comprising: oxidizing a sacrificial layer of silicon carbide on a silicon carbide portion of a device structure to produce an oxide layer having a thickness sufficient to have substantially consumed the sacrificial layer based upon the thickness of the silicon carbide sacrificial layer and the oxide consumption factor of silicon carbide.

Claim 6

A method of obtaining high quality passivation layers on silicon carbide surfaces, the method comprising: oxidizing a sacrificial layer of silicon carbide on a silicon carbide portion of a device structure to produce an oxide layer having a thickness sufficient to have substantially consumed the sacrificial layer based upon the thickness of the silicon carbide sacrificial layer and the oxide consumption factor of silicon carbide.