Patent US5458919A successfully refreshed from Google Patents.
US5458919A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a film on a substrate by activating a reactive gas
Assignee: Toshiba Corp
•
Filing: 1994-10-18
•
Granted: 1995-10-17
•
Expires: 2014-10-18
Abstract
Abstract A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
Inventors
- 👤 Haruo Okano
- 👤 Sadahisa Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; C23C16/46; C23C16/463; H10P14/6338; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10P14/6684; H10P14/6686; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
129 words
A thin film forming method comprising the steps of: providing a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram comprising a liquid phase region defined by a melting curve and an evaporation curve that intersect at a tripple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
Claim 2
Dependent Claim
129 words
A thin film forming method comprising the steps of: providing a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram comprising a liquid phase region defined by a melting curve and an evaporation curve that intersect at a tripple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
Claim 3
Dependent Claim
153 words
A thin film forming method, comprising the steps of: providing a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a first reactive gas and a second reactive gas into the reaction vessel, the first and second reactive gases each being characterized by a respective phase diagram comprising a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and reacting the first and second gases to form a thin film containing elements of the first and second reactive gases on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of at least one of the first and second reactive gases, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of at least one of the first and second reactive gases.
Claim 4
Dependent Claim
153 words
A thin film forming method, comprising the steps of: providing a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a first reactive gas and a second reactive gas into the reaction vessel, the first and second reactive gases each being characterized by a respective phase diagram comprising a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and reacting the first and second gases to form a thin film containing elements of the first and second reactive gases on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of at least one of the first and second reactive gases, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of at least one of the first and second reactive gases.
References Cited (Backward Citations)
GB1407222A
Cited
FR2154664A1
Cited
US4009680A
Cited
US4743570A
Cited
EP0049586A1
Cited
US4501225A
Cited
US4673592A
Cited
JPS59163831A
Cited
US4675205A
Cited
US4645564A
Cited
US4747928A
Cited
US4800174A
Cited
JPS6358925A
Cited
JPS63125680A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-10-16 | 1999-04-17 | 1999-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-16 | 2003-04-17 | 2003-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-16 | 2007-04-17 | 2007-10-17 | $7700.00 | Window Closed / Lapsed |