Patent US5457069A successfully refreshed from Google Patents.
US5457069A
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US
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Process for fabricating device having titanium-tungsten barrier layer and silicide layer contacted shallow junction simultaneously formed
Assignee: National Science and Technology Council
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Filing: 1994-08-31
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Granted: 1995-10-10
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Expires: 2014-08-31
Abstract
Abstract A process for fabricating a device having a TiW barrier layer and a relatively shallow junction contacted with a silicide layer wherein said TiW barrier layer and said silicide layer are simultaneously formed comprising steps of preparing a Si substrate, applying a layer including therein a Ti and an appropriate X element such as Co or Pt on the Si substrate, applying a W layer on the layer including therein the Ti and the X element for forming a W/X-Ti/Si structure, and transforming the W/X-Ti/Si structure into a TiW/silicide/Si structure to obtain the device having a TiW barrier layer and a silicide layer contacted shallow junction. The present invention provides a simplified process for fabricating such a device having therewith a junction of a low resistance and a high temperature stability.
Inventors
- 👤 Mao-Chieh Chen
- 👤 Fann-Mei Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:32
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
119 words
A process for fabricating a device having a TiW barrier layer and a relatively shallow junction contacted with a silicide layer wherein said TiW barrier layer and said silicide layer are simultaneously formed, comprising steps of: (a) preparing a Si substrate; (b) applying a layer including therein Ti and an element X on said Si substrate, wherein said element X is selected from the group consisting of Co, Pt, Pd, and Ni; (c) applying a W layer on the layer including therein said Ti and said element X for forming a W/X-Ti/Si structure; and (d) transforming said W/X-Ti/Si structure into a TiW/silicide/Si structure to obtain said device having said TiW barrier layer and said silicide layer contacted shallow junction.
Claim 2
Dependent Claim
119 words
A process for fabricating a device having a TiW barrier layer and a relatively shallow junction contacted with a silicide layer wherein said TiW barrier layer and said silicide layer are simultaneously formed, comprising steps of: (a) preparing a Si substrate; (b) applying a layer including therein Ti and an element X on said Si substrate, wherein said element X is selected from the group consisting of Co, Pt, Pd, and Ni; (c) applying a W layer on the layer including therein said Ti and said element X for forming a W/X-Ti/Si structure; and (d) transforming said W/X-Ti/Si structure into a TiW/silicide/Si structure to obtain said device having said TiW barrier layer and said silicide layer contacted shallow junction.
Claim 3
Dependent Claim
17 words
A process as claimed in claim 1, wherein said step (b) is executed by a deposition process.
Claim 4
Dependent Claim
25 words
A process as claimed in claim 2, wherein said step (b) is executed by one of a sputtering process and a dual electron-beam gun evaporation.
Claim 5
Dependent Claim
17 words
A process as claimed in claim 1, wherein said step (c) is executed by a deposition process.
Claim 6
Dependent Claim
66 words
A process as claimed in claim 1, wherein said applied W layer has a proper thickness and said applied X-Ti layer has a thickness and composition such that after said step (d) is executed, said X element will completely react with Si element of said substrate to form said silicide layer and said Ti in said X-Ti layer will be completely dissolved in said W layer.
Claim 7
Dependent Claim
18 words
A process as claimed in claim 5, wherein said thickness of said applied W layer is about 400Å.
Claim 8
Dependent Claim
17 words
A process as claimed in claim 5, wherein said thickness of said X-Ti layer is about 360Å.
Claim 9
Dependent Claim
22 words
A process as claimed in claim 5, wherein said composition of said X-Ti layer has an X-Ti atomic ratio of about 63:37.
Claim 10
Dependent Claim
19 words
A process as claimed in claim 5, wherein a Ti-W weight ratio of said TiW layer is about 10:90.
Claim 11
Dependent Claim
15 words
A process as claimed in claim 1, wherein said step (d) is a heat-treating process.
Claim 12
Dependent Claim
14 words
A process as claimed in claim 10, wherein said step (d) is annealing process.
Claim 13
Dependent Claim
27 words
A process as claimed in claim 11, wherein said step (d) is executed at a relatively high temperature ranging from about 620° C. to about 760° C.
Claim 14
Dependent Claim
17 words
A process as claimed in claim 11, wherein said step (d) is executed for about 30 minutes.
Claim 15
Dependent Claim
18 words
A process as claimed in claim 11, wherein said step (d) is executed in the presence of nitrogen.
Claim 16
Dependent Claim
14 words
A process as claimed in claim 11, wherein said step (d) is executed once.
Claim 17
Dependent Claim
16 words
A process as claimed in claim 1, wherein said barrier layer is a diffusion barrier layer.
References Cited (Backward Citations)
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