Nonvolatile semiconductor memory with selectively driven word lines

Claim 2

A nonvolatile semiconductor memory comprising: a plurality of word lines; a plurality of memory cells, each of which is of one MOS transistor type having a floating gate, a control gate coupled to one of said word lines, a source and a drain; address decode means for receiving address signals and for generating a select signal for selecting one of said plurality of word lines; and a plurality of word drivers coupled to said address decode means and at least one of said word lines for feeding one of first to fourth voltages selectively to the word lines coupled thereto, wherein said fourth voltage is at a circuit reference potential; said first voltage is at a potential having a predetermined potential difference from said fourth voltage; said second voltage has a polarity opposed to that of said first voltage; and said third voltage has the same polarity as that of said first voltage and has a far larger potential difference than said predetermined potential difference, and wherein each of said plurality of word drivers includes voltage generating means having a first terminal adapted to be fed with said third voltage in a program mode and with said first voltage in erase and read modes, and a second terminal adapted to be fed with said second voltage in the erase mode and with said fourth voltage in the program and read modes; and logic select means for switching the signal from said address decode means selectively into a positive or negative logic in dependence upon whether or not the mode is said erase mode and for outputting the switched signal.

Claim 3

The nonvolatile semiconductor memory according to claim 1, wherein said voltage generating means comprises an output circuit including: a first output MOS transistor of first conduction type having its first electrode coupled to said first terminal; and a second output MOS transistor of second conduction type having its first electrode coupled to said second terminal, and wherein each of said first and second output MOS transistors has its second electrode coupled to one of said word lines.

Claim 4

The nonvolatile semiconductor memory according to claim 2, wherein said voltage generating means further comprises: a first feedback MOS transistor of the first conduction type connected between said first terminal and the gate of said first output MOS transistor and having its gate coupled to said second electrode of the first output MOS transistor; and a second feedback MOS transistor of the second conduction type connected between said second terminal and the gate of said second output MOS transistor and having its gate coupled to said second electrode of the second output MOS transistor.

Claim 5

The nonvolatile semiconductor memory according to claim 3, wherein said voltage generating means further comprises: a first isolating MOS transistor of the second conduction type connected between the gate of said first output MOS transistor and the output of said logic select circuit and having its gate fed with said first voltage; and a second isolating MOS transistor of the first conduction type connected between the gate of said second output MOS transistor and the output of said logic select circuit and having its gate fed with said fourth voltage.

Claim 6

The nonvolatile semiconductor memory according to claim 4, wherein said logic select circuit includes: an inverter circuit for inverting the select signal coming from said address decode means; and switch means for outputting one of the select signal inverted by said inverter circuit and the non-inverted select signal.

Claim 7

The nonvolatile semiconductor memory according to claim 5, wherein each said erase mode, said program mode and said read mode is designated according to a command fed from the outside of said nonvolatile semiconductor memory.

Claim 8

The nonvolatile semiconductor memory according to claim 6, wherein said logic select means includes control means for feeding such a control signal to said logic select means that said non-inverted select signal may be outputted when said erase mode is designated by said command.

Claim 9

The nonvolatile semiconductor memory according to claim 7, wherein said logic select means includes control means for feeding such a control signal to said logic select means that said inverted select signal may be outputted when said program and read modes are designated by said commands.

Claim 10

The nonvolatile semiconductor memory according to claim 8, wherein said control means feeds said first and second terminals with said first to fourth voltages in accordance with the modes designated according to said commands.

Claim 11

The nonvolatile semiconductor memory according to claim 9, wherein said plurality of voltage generating means are coupled to said logic select means, wherein in said erase mode, said word driver coupled to at least one selected word line feeds said second voltage wherein said word drivers coupled to the unselected word lines feed said first voltage, wherein in said program mode, said word driver coupled to said selected one word line feeds said third voltage whereas said word drivers coupled to said unselected word lines feed said fourth voltage, and wherein in the read mode, said word driver coupled to said selected one word line feeds said first voltage whereas said word drivers coupled to said unselected word lines feed said fourth voltage.

Claim 12

A microcomputer system comprising: a microcomputer; bus means for transferring an address signal, a data and a control signal; and a nonvolatile semiconductor memory coupled to said bus means and including: a plurality of word lines; a plurality of memory cells, each of which is of one MOS transistor type having a floating gate, a control gate coupled to one of said word lines, a source and a drain; address decode means for receiving address signals from said microprocessor, for generating a select signal for selecting one of said plurality of word lines; and a plurality of word drivers coupled to said address decode means and at least one of said word lines for feeding one of first to fourth voltages selectively to the word lines coupled thereto, wherein said fourth voltage is at a circuit reference potential; said first voltage is at a potential having a predetermined potential difference from said fourth voltage; said second voltage has a polarity opposed to that of said first voltage; and said third voltage has the same polarity as that of said first voltage and has a far larger potential difference than said predetermined potential difference, and wherein each of said plurality of word drivers includes voltage generating means having a first terminal adapted to be fed with said third voltage in a program mode and with said first voltage in erase and read modes, and a second terminal adapted to be fed with said second voltage in the erase mode and with said fourth voltage in the program and read modes; and logic select means for switching the signal from said address decode means selectively into a positive or negative logic in dependence upon whether or not the mode is said erase mode and for outputting the switched signal.

Claim 13

A microcomputer system comprising: a microcomputer; bus means for transferring an address signal, a data and a control signal; and a nonvolatile semiconductor memory coupled to said bus means and including: a plurality of word lines; a plurality of memory cells, each of which is of one MOS transistor type having a floating gate, a control gate coupled to one of said word lines, a source and a drain; address decode means for receiving address signals from said microprocessor, for generating a select signal for selecting one of said plurality of word lines; and a plurality of word drivers coupled to said address decode means and at least one of said word lines for feeding one of first to fourth voltages selectively to the word lines coupled thereto, wherein said fourth voltage is at a circuit reference potential; said first voltage is at a potential having a predetermined potential difference from said fourth voltage; said second voltage has a polarity opposed to that of said first voltage; and said third voltage has the same polarity as that of said first voltage and has a far larger potential difference than said predetermined potential difference, and wherein each of said plurality of word drivers includes voltage generating means having a first terminal adapted to be fed with said third voltage in a program mode and with said first voltage in erase and read modes, and a second terminal adapted to be fed with said second voltage in the erase mode and with said fourth voltage in the program and read modes; and logic select means for switching the signal from said address decode means selectively into a positive or negative logic in dependence upon whether or not the mode is said erase mode and for outputting the switched signal.

Claim 14

The microcomputer system according to claim 11, wherein said voltage generating means comprises an output circuit including: a first output MOS transistor of first conduction type having its first electrode coupled to said first terminal; and a second output MOS transistor of second conduction type having its first electrode coupled to said second terminal, and wherein each of said first and second output MOS transistors has its second electrode coupled to one of said word lines.

Claim 15

The microcomputer system according to claim 12, wherein said voltage generating means further comprises: a first feedback MOS transistor of the first conduction type connected between said first terminal and the gate of said first output MOS transistor and having its gate coupled to said second electrode of the first output MOS transistor; and a second feedback MOS transistor of the second conduction type connected between said second terminal and the gate of said second output MOS transistor and having its gate coupled to said second electrode of the second output MOS transistor.

Claim 16

The microcomputer system according to claim 13, wherein said voltage generating means further comprises: a first isolating MOS transistor of the second conduction type connected between the gate of said first output MOS transistor and the output of said logic select circuit and having its gate fed with said first voltage; and a second isolating MOS transistor of the first conduction type connected between the gate of said second output MOS transistor and the output of said logic select circuit and having its gate fed with said fourth voltage.

Claim 17

The microcomputer system according to claim 14, wherein said logic select circuit includes: an inverter circuit for inverting the select signal coming from said address decode means; and switch means for outputting one of the select signal inverted by said inverter circuit and the non-inverted select signal.

Claim 18

The microcomputer system according to claim 15, wherein each said erase mode, said program mode and said read mode is designated according to a command fed from said microprocessor.

Claim 19

The microcomputer system according to claim 16, wherein said logic select means includes control means for feeding such a control signal to said logic select means that said non-inverted select signal may be outputted when said erase mode is designated by said command.

Claim 20

The microcomputer system according to claim 17, wherein said logic select means includes control means for feeding such a control signal to said logic select means that said inverted select signal may be outputted when said program and read modes are designated by said commands.

Claim 21

The microcomputer system according to claim 18, wherein said control means feeds said first and second terminals with said first to fourth voltages in accordance with the modes designated according to said commands.

Claim 22

The microcomputer system according to claim 19, wherein said plurality of voltage generating means are coupled to said logic select means, wherein in said erase mode, said word driver coupled to at least one selected word line feeds said second voltage wherein said word drivers coupled to the unselected word lines feed said first voltage, wherein in said program mode, said word driver coupled to said selected one word line feeds said third voltage whereas said word drivers coupled to said unselected word lines feed said fourth voltage, and wherein in the read mode, said word driver coupled to said selected one word line feeds said first voltage whereas said word drivers coupled to said unselected word lines feed said fourth voltage.