Patent US5454901A successfully refreshed from Google Patents.
US5454901A
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Process for treating semiconductor substrates
Assignee: Renesas Electronics Corp
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Filing: 1991-05-21
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Granted: 1995-10-03
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Expires: 2011-05-21
Abstract
Abstract Semiconductor substrates are treated in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and a purified water or in a treating solution consisting of hydrofluoric acid, ammonium fluoride, hydrogen peroxide and a purified water, wherein the treating solution preferably has a hydrofluoric acid concentration of 0.1 to 10 wt % and a hydrogen peroxide concentration of 0.1 to 15 wt %. A process for treating semiconductor substrates is provided according to this invention, which allows less inclusion of metallic impurities from the treating solution and has excellent ability of removing metallic impurities with a very small amount of microparticles deposited on the substrate. The number of microparticles deposited on the semiconductor substrates can be reduced to about 1/10 the level in the conventional process.
Inventors
- 👤 Mikio Tsuji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:36
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
54 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein said treating solution has a hydrofluoric acid concentration of 0.1 to 10 wt % and a hydrogen peroxide concentration of 0.1 to 15 wt %.
Claim 2
Dependent Claim
54 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein said treating solution has a hydrofluoric acid concentration of 0.1 to 10 wt % and a hydrogen peroxide concentration of 0.1 to 15 wt %.
Claim 3
Dependent Claim
58 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is pretreated in a mixture of ammonia, hydrogen peroxide and a purified water.
Claim 4
Dependent Claim
58 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is pretreated in a mixture of ammonia, hydrogen peroxide and a purified water.
Claim 5
Dependent Claim
56 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is pretreated in a mixture of sulfuric acid and hydrogen peroxide.
Claim 6
Dependent Claim
56 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is pretreated in a mixture of sulfuric acid and hydrogen peroxide.
Claim 7
Dependent Claim
59 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is pretreated in a mixture of hydrochloric acid, hydrogen peroxide and a purified water.
Claim 8
Dependent Claim
59 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is pretreated in a mixture of hydrochloric acid, hydrogen peroxide and a purified water.
Claim 9
Dependent Claim
55 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is subjected to ozone pretreatment with or without UV irradiation.
Claim 10
Dependent Claim
55 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is subjected to ozone pretreatment with or without UV irradiation.
Claim 11
Dependent Claim
58 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is subjected to a pretreatment of one of plasma etching and photoresist washing.
Claim 12
Dependent Claim
58 words
A process for treating a silicon substrate comprising a step of treating the silicon substrate in a treating solution consisting of hydrofluoric acid, hydrogen peroxide and purified water wherein prior to said step of treating the silicon substrate in said treating solution, the silicon substrate is subjected to a pretreatment of one of plasma etching and photoresist washing.
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| 3.5 Years (Year 4) | 1998-10-02 | 1999-04-03 | 1999-10-03 | $2000.00 | Window Closed / Lapsed |
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