US5450022A — Structure and method for configuration of a field…

Claim 1

Independent Claim 105 words

A configuration memory cell for programming a configuration control circuit having a first input lead, said configuration memory cell comprising: an input lead which receives a programming signal; a storage device coupled to said input lead, wherein said storage device stores said programming signal and an inverted programming signal which is the inverse of said programming signal; a selectable configuration circuit coupled between said storage device and said first input lead of said configuration control circuit, wherein said selectable configuration circuit can be selectably configured to transmit said programming signal or said inverted programming signal to said first input lead of said configuration control circuit.

Claim 2

Dependent Claim 105 words

A configuration memory cell for programming a configuration control circuit having a first input lead, said configuration memory cell comprising: an input lead which receives a programming signal; a storage device coupled to said input lead, wherein said storage device stores said programming signal and an inverted programming signal which is the inverse of said programming signal; a selectable configuration circuit coupled between said storage device and said first input lead of said configuration control circuit, wherein said selectable configuration circuit can be selectably configured to transmit said programming signal or said inverted programming signal to said first input lead of said configuration control circuit.

Claim 3

Dependent Claim 37 words

The configuration memory cell of claim 1, further comprising a transistor connected between said input lead and said storage device, wherein said transistor passes said programming signal to said storage device in response to an enabling signal.

Claim 4

Dependent Claim 13 words

The configuration memory cell of claim 1, wherein said storage device is non-volatile.

Claim 5

Dependent Claim 66 words

The configuration memory cell of claim 1, wherein said storage device comprises: a first node coupled to said input lead; a second node; a first inverter having an input conductor coupled to said first node and an output conductor coupled to said second node; and a second inverter having an input conductor coupled to said second node and an output conductor coupled to said first node.

Claim 6

Dependent Claim 34 words

The configuration memory cell of claim 4, wherein said selectable configuration circuit comprises: means for selectably connecting said first node or said second node to said first input lead of said configuration control circuit.

Claim 7

Dependent Claim 15 words

The configuration memory cell of claim 1, wherein said selectable configuration circuit is mask programmable.

Claim 8

Dependent Claim 15 words

The configuration memory cell of claim 1, wherein said selectable configuration circuit comprises programmable fuses.

Claim 9

Dependent Claim 16 words

The configuration memory cell of claim 1, wherein said selectable configuration circuit comprises programmable EPROM cells.

Claim 10

Dependent Claim 16 words

The configuration memory cell of claim 1, wherein said selectable configuration circuit comprises programmable EEPROM cells.

Claim 11

Dependent Claim 66 words

The configuration memory cell of claim 1, wherein said configuration control circuit has a second input lead, said selectable configuration circuit being coupled between said storage device and said second input lead of said configuration control circuit, wherein said selectable configuration circuit can be selectably configured to transmit said programming signal or said inverted programming signal to said second input lead of said configuration control circuit.

Claim 12

Dependent Claim 66 words

The configuration memory cell of claim 10, wherein said storage device comprises: a first node coupled to said input lead; a second node; a first inverter having an input conductor coupled to said first node and an output conductor coupled to said second node; and a second inverter having an input conductor coupled to said second node and an output conductor coupled to said first node.

Claim 13

Dependent Claim 56 words

The configuration memory cell of claim 11, wherein said selectable configuration circuit comprises: means for selectably connecting said first node or said second node to said first input lead of said configuration control circuit; and means for selectably connecting said first node or said second node to said second input lead of said configuration control circuit.

Claim 14

Dependent Claim 85 words

A configuration memory cell for programming a configuration control circuit having a first input lead, said configuration memory cell comprising: an input lead which receives a programming signal; a storage device coupled to said first input lead of said configuration control circuit, a selectable configuration circuit coupled between said input lead and said storage device, wherein said selectable configuration circuit can be selectably configured such that said storage device stores said programming signal or an inverted signal which is the inverse of said programming signal.

Claim 15

Dependent Claim 85 words

A configuration memory cell for programming a configuration control circuit having a first input lead, said configuration memory cell comprising: an input lead which receives a programming signal; a storage device coupled to said first input lead of said configuration control circuit, a selectable configuration circuit coupled between said input lead and said storage device, wherein said selectable configuration circuit can be selectably configured such that said storage device stores said programming signal or an inverted signal which is the inverse of said programming signal.

Claim 16

Dependent Claim 39 words

The configuration memory cell of claim 13, further comprising a transistor coupled between said input lead and said selectable configuration circuit, wherein said transistor passes said programming signal to said selectable configuration circuit in response to an enabling signal.

Claim 17

Dependent Claim 13 words

The configuration memory cell of claim 13, wherein said storage device is non-volatile.

Claim 18

Dependent Claim 72 words

The configuration memory cell of claim 13, wherein said storage device comprises: a first node coupled to said first input lead of said configuration control circuit; a second node; a first inverter having an input conductor coupled to said first node and an output conductor coupled to said second node; and a second inverter having an input conductor coupled to said second node and an output conductor coupled to said first node.

Claim 19

Dependent Claim 32 words

The configuration memory cell of claim 16, wherein said selectable configuration circuit comprises: means for selectably coupling said input lead to said first node or said second node of said storage device.

Claim 20

Dependent Claim 46 words

The configuration memory cell of claim 13, wherein said configuration control circuit has a second input lead, wherein said selectable configuration circuit can be selectably configured to provide said programming signal or said inverted programming signal to said second input lead of said configuration control circuit.

Claim 21

Dependent Claim 83 words

The configuration memory cell of claim 18, wherein said storage device comprises: a first node coupled to said first input lead of said configuration control circuit; a second node coupled to said second input lead of said configuration control circuit; a first inverter having an input conductor coupled to said first node and an output conductor coupled to said second node; and a second inverter having an input conductor coupled to said second node and an output conductor coupled to said first node.

Claim 22

Dependent Claim 32 words

The configuration memory cell of claim 19, wherein said selectable configuration circuit comprises: means for selectably connecting said input lead to said first node or said second node of said storage device.

Claim 23

Dependent Claim 15 words

The configuration memory cell of claim 13, wherein said selectable configuration circuit is mask programmable.

Claim 24

Dependent Claim 15 words

The configuration memory cell of claim 13, wherein said selectable configuration circuit comprises programmable fuses.

Claim 25

Dependent Claim 16 words

The configuration memory cell of claim 13, wherein said selectable configuration circuit comprises programmable EPROM cells.

Claim 26

Dependent Claim 16 words

The configuration memory cell of claim 13, wherein said selectable configuration circuit comprises programmable EEPROM cells.

Claim 27

Independent Claim 96 words

A method of configuring a field programmable gate array comprising the steps of: transmitting a plurality of identical programming signals to a corresponding plurality of selectable configuration circuits; configuring each of said plurality of selectable configuration circuits in a first configuration or a second configuration; transmitting a first signal pair through said selectable configuration circuits which have said first configuration; transmitting a second signal pair, opposite said first signal pair, through said selectable configuration circuits which have said second configuration; and configuring said field programmable gate array in response to said first and second signal pairs.

Claim 28

Independent Claim 96 words

A method of configuring a field programmable gate array comprising the steps of: transmitting a plurality of identical programming signals to a corresponding plurality of selectable configuration circuits; configuring each of said plurality of selectable configuration circuits in a first configuration or a second configuration; transmitting a first signal pair through said selectable configuration circuits which have said first configuration; transmitting a second signal pair, opposite said first signal pair, through said selectable configuration circuits which have said second configuration; and configuring said field programmable gate array in response to said first and second signal pairs.

Claim 29

Independent Claim 118 words

A method of configuring a field programmable gate array comprising the steps of: randomly configuring each of a plurality of selectable configuration circuits in a first configuration or a second configuration, wherein said selectable configuration circuits having said first configuration provide a first signal pair in response to a programming signal and said selectable configuration circuits having said second configuration provide a second signal pair in response to said programming signal, said second signal pair being opposite to said first signal pair; transmitting a corresponding plurality of programming signals to said plurality of selectable configuration circuits; and configuring said field programmable gate array in response to the first and second signal pairs provided by said selectable configuration circuits.

Claim 30

Independent Claim 118 words

A method of configuring a field programmable gate array comprising the steps of: randomly configuring each of a plurality of selectable configuration circuits in a first configuration or a second configuration, wherein said selectable configuration circuits having said first configuration provide a first signal pair in response to a programming signal and said selectable configuration circuits having said second configuration provide a second signal pair in response to said programming signal, said second signal pair being opposite to said first signal pair; transmitting a corresponding plurality of programming signals to said plurality of selectable configuration circuits; and configuring said field programmable gate array in response to the first and second signal pairs provided by said selectable configuration circuits.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1998-09-11	1999-03-13	1999-09-12	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2002-09-11	2003-03-13	2003-09-12	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2006-09-11	2007-03-13	2007-09-12	$7700.00	Window Closed / Lapsed

Structure and method for configuration of a field programmable gate array

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