US5148390A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory cell with known state on power up
Assignee: Xilinx Inc
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Filing: 1991-05-24
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Granted: 1992-09-15
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Expires: 2011-05-24
Abstract
Abstract A five transistor memory cell that can be reliably read and written from a single data line. The cell includes two inverters and a pass transistor. The cell read/write circuitry includes an address supply voltage source which is maintained at a first level during write and at a second level during read, selected to reduce read disturbance. The memory cell read circuitry includes a circuit for precharging the cell data line prior to reading. The state of the memory cell is continuously available at output nodes to control other circuitry even during the read operation. Selective doping of the pull-up transistors of the inverters in the memory cell controls the initial state of the memory cell after the memory cell is powered up.
Inventors
- 👤 Hung-Cheng Hsieh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:23
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/12; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; G11C7/20; G11C8/00; G11C8/08
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
223 words
A memory circuit comprising: a first memory transistor and a second memory transistor; a first load transistor and a second load transistor; each of said memory and load transistors having a channel, a gate, a source, and a drain, said gate controlling conductivity of said channel between said source and said drain; means for connecting said drain of said first memory transistor, said drain of said first load transistor, and said gate of second memory transistor together; means for connecting said drain of said second memory transistor, said drain of said second load transistor, and said gate of said first memory transistor together; means for connecting said gates of said first and second load transistors to a first voltage supply; means for connecting said sources of said first and second load transistors to a second voltage supply; means for connecting said sources of said first and second memory transistors to a third voltage supply; wherein a threshold voltage of said first load transistor is selected to be sufficiently lower than a threshold voltage of said second load transistor that upon power-up said drain of said first memory transistor provides a logical one and said drain of said second memory transistor provides a logical zero; said channel of said first load transistor being doped less heavily than said channel of said second load transistor.
Claim 2
Dependent Claim
223 words
A memory circuit comprising: a first memory transistor and a second memory transistor; a first load transistor and a second load transistor; each of said memory and load transistors having a channel, a gate, a source, and a drain, said gate controlling conductivity of said channel between said source and said drain; means for connecting said drain of said first memory transistor, said drain of said first load transistor, and said gate of second memory transistor together; means for connecting said drain of said second memory transistor, said drain of said second load transistor, and said gate of said first memory transistor together; means for connecting said gates of said first and second load transistors to a first voltage supply; means for connecting said sources of said first and second load transistors to a second voltage supply; means for connecting said sources of said first and second memory transistors to a third voltage supply; wherein a threshold voltage of said first load transistor is selected to be sufficiently lower than a threshold voltage of said second load transistor that upon power-up said drain of said first memory transistor provides a logical one and said drain of said second memory transistor provides a logical zero; said channel of said first load transistor being doped less heavily than said channel of said second load transistor.
Claim 3
Dependent Claim
24 words
A memory circuit as in claim 1 further comprising means for connecting said gate of said second memory transistor to an input signal line.
Claim 4
Dependent Claim
46 words
A memory circuit as in claim 2 in which said means for connecting is a pass transistor having a drain connected to said gate of said second memory transistor, a source connected to said input signal line and a gate connected to a means for controlling.
Claim 5
Dependent Claim
24 words
A memory circuit as in claim 1 further comprising means for connecting said gate of said first memory transistor to an input signal line.
Claim 6
Dependent Claim
46 words
A memory circuit as in claim 4 in which said means for connecting is a pass transistor having a drain connected to said gate of said first memory transistor, a source connected to said input signal line and a gate connected to a means for controlling.
Claim 7
Dependent Claim
24 words
A memory circuit as in claim 1 further comprising means for connecting said gate of said second memory transistor to an output signal line.
Claim 8
Dependent Claim
24 words
A memory circuit as in claim 1 further comprising means for connecting said gate of said first memory transistor to an output signal line.
Claim 9
Dependent Claim
18 words
A memory circuit as in claim 1 in which said first and second voltage supplied are the same.
Claim 10
Dependent Claim
20 words
A memory circuit as in claim 1 in which said first voltage supply is lower than said second voltage supply.
Claim 11
Dependent Claim
61 words
A memory circuit as in claim 1 in which a channel of said first load transistor is not doped more heavily than a well in which said channel of said first load transistor is located and a channel of said second load transistor is doped more heavily than a well in which said channel of said second load transistor is located.
Claim 12
Dependent Claim
28 words
A memory circuit as in claim 1 in which the channel length of said first load transistor is smaller than the channel length of said second load transistor.
Claim 13
Dependent Claim
38 words
A memory circuit as in claim 1 in which the ratio of channel width to channel length of said second load transistor is less than the ratio of channel width to channel length of said second memory transistor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-15 | 1996-03-16 | 1996-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-15 | 2000-03-16 | 2000-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-15 | 2004-03-16 | 2004-09-15 | $7700.00 | Window Closed / Lapsed |