Semiconductor device and a method of manufacturing thereof

Claim 2

A semiconductor device comprising: a semiconductor layer formed on an insulator layer, a channel region of a first conductivity type formed in said semiconductor layer, first source/drain regions of a second conductivity type formed in said semiconductor layer adjacent to the left and right sides of said channel region, a gate electrode formed above said channel region with a dielectric thin film therebetween, first sidewall spacers provided on the left and right sidewalls of said gate electrode, a metal layer having etching-resistance formed at the surface of said semiconductor layer in a region outside the region where said first sidewall spacers are formed and adjacent to said first sidewall spacers, second sidewall spacers provided to cover the outer surface of said first sidewall spacers, second source/drain regions having a concentration higher than that of said first source/drain regions, and formed in said semiconductor layer in a region outside the region where said second sidewall spacers are formed, and an interconnection layer connected to a surface of said metal layer, wherein said metal layer comprises cobalt silicide.

Claim 3

A semiconductor device comprising: two semiconductor layers formed on a same insulator layer insulation-isolated from each other; a gate electrode formed above each of said semiconductor layers with a gate dielectric thin film therebetween; first sidewall spacers provided at the left and right sidewalls of each said gate electrode; a metal layer having etching-resistance, and formed in a region outside the region where said first sidewall spacers are formed at the surface of each said semiconductor layer and adjacent to said first sidewall spacers; second sidewall spacers formed to cover the outer surface of each of said first sidewall spacers; and an interconnection layer connected to a surface of said metal layer; wherein one of said two semiconductor layers comprises a channel region of p type right beneath said gate electrode; first source/drain regions of n type formed adjacent to the left and right sides of said channel region; and second source/drain regions of n type having a concentration higher than that of said first source/drain regions of n type, and formed adjacent to said first source/drain regions of n type at a region outside the region where said second sidewall spacers are formed, and the other semiconductor layer comprises a channel region of n type right beneath said gate electrode; first source/drain regions of p type formed adjacent to the left and right sides of said channel region; and second source/drain regions of p type having a concentration higher than that of said first source/drain regions of p type, and formed adjacent to said first source/drain regions of p type in a region outside the region where said second sidewall spacers are formed, wherein said metal layer comprises cobalt silicide.

Claim 4

A semiconductor device comprising: two semiconductor layers formed on a same insulator layer insulation-isolated from each other; a gate electrode formed above each of said semiconductor layers with a gate dielectric thin film therebetween; first sidewall spacers provided at the left and right sidewalls of each said gate electrode; a metal layer having etching-resistance, and formed in a region outside the region where said first sidewall spacers are formed at the surface of each said semiconductor layer and adjacent to said first sidewall spacers; second sidewall spacers formed to cover the outer surface of each of said first sidewall spacers; and an interconnection layer connected to a surface of said metal layer; wherein one of said two semiconductor layers comprises a channel region of p type right beneath said gate electrode; first source/drain regions of n type formed adjacent to the left and right sides of said channel region; and second source/drain regions of n type having a concentration higher than that of said first source/drain regions of n type, and formed adjacent to said first source/drain regions of n type at a region outside the region where said second sidewall spacers are formed, and the other semiconductor layer comprises a channel region of n type right beneath said gate electrode; first source/drain regions of p type formed adjacent to the left and right sides of said channel region; and second source/drain regions of p type having a concentration higher than that of said first source/drain regions of p type, and formed adjacent to said first source/drain regions of p type in a region outside the region where said second sidewall spacers are formed, wherein said metal layer comprises cobalt silicide.

Claim 5

A semiconductor device comprising: a semiconductor layer formed on an insulator layer, a channel region of a first conductivity type formed in said semiconductor layer, first source/drain regions of a second conductivity type formed in said semiconductor layer adjacent to the left and right sides of said channel region, a gate electrode formed above said channel region with a dielectric thin film therebetween, first sidewall spacers provided on the left and right sidewalls of said gate electrode, a metal layer having etching-resistance formed at the surface of said semiconductor layer in a region outside the region where said first sidewall spacers are formed and adjacent to said first sidewall spacers, second sidewall spacers provided to cover the outer surface of said first sidewall spacers, second source/drain regions having a concentration higher than that of said first source/drain regions, and formed in said semiconductor layer in a region outside the region where said second sidewall spacers are formed, and an interconnection layer connected to a surface of said metal layer, wherein said metal layer comprises selective tungsten.

Claim 6

A semiconductor device comprising: a semiconductor layer formed on an insulator layer, a channel region of a first conductivity type formed in said semiconductor layer, first source/drain regions of a second conductivity type formed in said semiconductor layer adjacent to the left and right sides of said channel region, a gate electrode formed above said channel region with a dielectric thin film therebetween, first sidewall spacers provided on the left and right sidewalls of said gate electrode, a metal layer having etching-resistance formed at the surface of said semiconductor layer in a region outside the region where said first sidewall spacers are formed and adjacent to said first sidewall spacers, second sidewall spacers provided to cover the outer surface of said first sidewall spacers, second source/drain regions having a concentration higher than that of said first source/drain regions, and formed in said semiconductor layer in a region outside the region where said second sidewall spacers are formed, and an interconnection layer connected to a surface of said metal layer, wherein said metal layer comprises selective tungsten.

Claim 7

A semiconductor device comprising: two semiconductor layers formed on a same insulator layer insulation-isolated from each other; a gate electrode formed above each of said semiconductor layers with a gate dielectric thin film therebetween; first sidewall spacers provided at the left and right sidewalls of each said gate electrode; a metal layer having etching-resistance, and formed in a region outside the region where said first sidewall spacers are formed at the surface of each said semiconductor layer and adjacent to said first sidewall spacers; second sidewall spacers formed to cover the outer surface of each of said first sidewall spacers; and an interconnection layer connected to a surface of said metal layer; wherein one of said two semiconductor layers comprises a channel region of p type right beneath said gate electrode; first source/drain regions of n type formed adjacent to the left and right sides of said channel region; and second source/drain regions of n type having a concentration higher than that of said first source/drain regions of n type, and formed adjacent to said first source/drain regions of n type at a region outside the region where said second sidewall spacers are formed, and the other semiconductor layer comprises a channel region of n type right beneath said gate electrode; first source/drain regions of p type formed adjacent to the left and right sides of said channel region; and second source/drain regions of p type having a concentration higher than that of said first source/drain regions of p type, and formed adjacent to said first source/drain regions of p type in a region outside the region where said second sidewall spacers are formed, wherein said metal layer comprises selective tungsten.

Claim 8

A semiconductor device comprising: two semiconductor layers formed on a same insulator layer insulation-isolated from each other; a gate electrode formed above each of said semiconductor layers with a gate dielectric thin film therebetween; first sidewall spacers provided at the left and right sidewalls of each said gate electrode; a metal layer having etching-resistance, and formed in a region outside the region where said first sidewall spacers are formed at the surface of each said semiconductor layer and adjacent to said first sidewall spacers; second sidewall spacers formed to cover the outer surface of each of said first sidewall spacers; and an interconnection layer connected to a surface of said metal layer; wherein one of said two semiconductor layers comprises a channel region of p type right beneath said gate electrode; first source/drain regions of n type formed adjacent to the left and right sides of said channel region; and second source/drain regions of n type having a concentration higher than that of said first source/drain regions of n type, and formed adjacent to said first source/drain regions of n type at a region outside the region where said second sidewall spacers are formed, and the other semiconductor layer comprises a channel region of n type right beneath said gate electrode; first source/drain regions of p type formed adjacent to the left and right sides of said channel region; and second source/drain regions of p type having a concentration higher than that of said first source/drain regions of p type, and formed adjacent to said first source/drain regions of p type in a region outside the region where said second sidewall spacers are formed, wherein said metal layer comprises selective tungsten.