Manufacture of thin film transistor

Abstract

Abstract PURPOSE:To suppress electric resistance to a low value, by removing a gate insulating film with a gate electrode as a mask, depositing a metal film on the surface of a silicon film, which is exposed by said removable, projecting any one of light, an electromagnetic waves and charged particles, heating the material, and forming the compound of metal and silicon. CONSTITUTION:A polycrystalline silicon film 22 is formed on a quartz substrate 21. Then, a gate insulating film 23 such as a silicon oxide film and a silicon nitride film is formed. Thereafter, a gate electrode 24 is formed. Then, an insulating film 25 is formed on the side wall of the gate electrode 24. Thereafter, a metal film 26 is deposited. Halogen-lamp light rays 27 and 28 are projected on the sample formed in this way for several tens of seconds or so. As a result, crystallization of the silicon film 22 is carried out directly beneath the gate electrode 24, and a crystallized silicon film 29 is formed. At the same time, a silicon compound (silicide) is formed on both sides of the gate insulating film 23 owing to the reaction between the metal film 26 and the silicon film 22. Thus a source region 31 and a drain region 32 are obtained.

Inventors

• 👤 Kenji Nakazawa
• 👤 中沢　憲二
• 👤 Hitoshi Arai
• 👤 均 新井
• 👤 Shigeto Koda
• 👤 幸田　成人

Bibliographic Details