Patent US4810944A successfully refreshed from Google Patents.
Patent US5443941A successfully refreshed from Google Patents.
US5443941A
Expired / Lapsed
US
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Plasma polymer antireflective coating
Assignee: National Semiconductor Corp
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Filing: 1993-03-01
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Granted: 1995-08-22
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Expires: 2013-03-01
Abstract
Abstract An antireflective coating used in the photolithography process is applied and removed in a plasma reactor. The halocarbon plasma polymer such as fluorocarbon plasma polymer of the present invention provides an improved antireflective coating.
Inventors
- 👤 Anand J. Bariya
- 👤 Satyendra S. Sethi
- 👤 Kevin C. Brown
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:36
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; G03F7/26; G03F7/42; G03F7/427
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
83 words
In the manufacture of an integrated circuit by means of a photolithographic process, a method comprising the steps of: providing a material having a surface to be patterned using said photolithographic process; onto said surface, depositing a layer of halocarbon plasma polymer anti-reflective coating; thereafter, applying a layer of photoresist onto said layer of halocarbon plasma polymer anti-reflective coating; using patterning means, forming a pattern into said photoresist by exposing and developing portions of said photoresist; and etching said pattern into said material.
Claim 2
Dependent Claim
83 words
In the manufacture of an integrated circuit by means of a photolithographic process, a method comprising the steps of: providing a material having a surface to be patterned using said photolithographic process; onto said surface, depositing a layer of halocarbon plasma polymer anti-reflective coating; thereafter, applying a layer of photoresist onto said layer of halocarbon plasma polymer anti-reflective coating; using patterning means, forming a pattern into said photoresist by exposing and developing portions of said photoresist; and etching said pattern into said material.
Claim 3
Dependent Claim
28 words
A method as recited in claim 1, further comprising the step of using an oxygen plasma to remove said photoresist material and said halocarbon plasma polymer anti-reflective coating.
Claim 4
Dependent Claim
28 words
A method as recited in claim 1 wherein said step of depositing a layer of halocarbon plasma polymer anti-reflective coating includes the step of generating fluorocarbon plasma polymer.
Claim 5
Dependent Claim
101 words
In the manufacture of an integrated circuit by means of a photolithographic process, a method comprising the steps of: preparing an intermediate product in a fabrication process in the manufacture of said integrated circuit, said intermediate product having a surface to be patterned using said photolithographic process; using a fluorocarbon plasma gas, depositing an anti-reflective layer on said surface to be patterned of said intermediate product; depositing on top of said anti-reflective layer, a layer of photoresist; using patterning means, forming a pattern into said photoresist by exposing and developing portions of said photoresist; and etching said pattern into said material.
Claim 6
Dependent Claim
101 words
In the manufacture of an integrated circuit by means of a photolithographic process, a method comprising the steps of: preparing an intermediate product in a fabrication process in the manufacture of said integrated circuit, said intermediate product having a surface to be patterned using said photolithographic process; using a fluorocarbon plasma gas, depositing an anti-reflective layer on said surface to be patterned of said intermediate product; depositing on top of said anti-reflective layer, a layer of photoresist; using patterning means, forming a pattern into said photoresist by exposing and developing portions of said photoresist; and etching said pattern into said material.
Claim 7
Dependent Claim
24 words
A method as recited in claim 4 further comprising the step of using an oxygen plasma to remove said photoresist and said anti-reflective coating.
Claim 8
Dependent Claim
77 words
In the manufacture of an integrated circuit by means of a photolithographic process, a method comprising the steps of: in a plasma reactor, depositing a layer of anti-reflective coating onto a material having a surface to be patterned using said photolithographic process; depositing a layer of resist on said layer of anti-reflective coating using patterning means, forming a pattern into said resist by exposing and developing portions of said resist; and etching said pattern into said material.
Claim 9
Dependent Claim
77 words
In the manufacture of an integrated circuit by means of a photolithographic process, a method comprising the steps of: in a plasma reactor, depositing a layer of anti-reflective coating onto a material having a surface to be patterned using said photolithographic process; depositing a layer of resist on said layer of anti-reflective coating using patterning means, forming a pattern into said resist by exposing and developing portions of said resist; and etching said pattern into said material.
Claim 10
Dependent Claim
26 words
A method as recited in claim 6, further comprising the step of using an oxygen plasma to remove said resist and said layer of anti-reflective coating.
Claim 11
Dependent Claim
17 words
A method as recited in claim 7 wherein said anti-reflective coating is a plasma polymer anti-reflective coating.
Claim 12
Dependent Claim
18 words
A method as recited in claim 7 wherein said anti-reflective coating is a halocarbon plasma polymer anti-reflective coating.
Claim 13
Dependent Claim
18 words
A method as recited in claim 7 wherein said anti-reflective coating is a fluorocarbon plasma polymer anti-reflective coating.
References Cited (Backward Citations)
US4614433A
Cited
US4668335A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-21 | 1999-02-20 | 1999-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-21 | 2003-02-20 | 2003-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-21 | 2007-02-20 | 2007-08-22 | $7700.00 | Window Closed / Lapsed |