US5442589A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fuse circuitry having physical fuse and non-volatile memory cell coupled to a detector
Assignee: Gemplus SA
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Filing: 1993-10-26
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Granted: 1995-08-15
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Expires: 2013-10-26
Abstract
Abstract A fuse circuit including: a physical fuse; a detection circuit for the detection of the state of the physical fuse; and an electrically programmable non-volatile memory cell associated with the physical fuse, programmed when the physical fuse is blown and connected to the detection circuit so that, when the electrically programmable non-volatile memory cell is programmed, the electrically programmable non-volatile memory cell confirms the blown state of the physical fuse even if the characteristics of the blown state of the physical fuse change with time.
Inventors
- 👤 Jacek Kowalski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:23
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0433; G06; G06K; G06K19/00; G06K19/06; G06K19/067; G06K19/07; G11C17/00; G11C17/14; G11C17/16; H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
85 words
A fuse circuit comprising: a physical fuse; a detection circuit for the detection of the state of the physical fuse; and an electrically programmable non-volatile memory cell associated with the physical fuse, programmed when the physical fuse is blown and connected to the detection circuit so that, when the electrically programmable non-volatile memory cell is programmed, the electrically programmable non-volatile memory cell confirms the blown state of the physical fuse even if the characteristics of the blown state of the physical fuse change with time.
Claim 2
Dependent Claim
85 words
A fuse circuit comprising: a physical fuse; a detection circuit for the detection of the state of the physical fuse; and an electrically programmable non-volatile memory cell associated with the physical fuse, programmed when the physical fuse is blown and connected to the detection circuit so that, when the electrically programmable non-volatile memory cell is programmed, the electrically programmable non-volatile memory cell confirms the blown state of the physical fuse even if the characteristics of the blown state of the physical fuse change with time.
Claim 3
Dependent Claim
26 words
A fuse circuit according to claim 1, wherein the physical fuse is an insulator fuse in the intact state and is conductive in the blown state.
Claim 4
Dependent Claim
26 words
A fuse circuit according to claim 2, wherein the physical fuse is an insulator fuse in the intact state and is resistive in the blown state.
Claim 5
Dependent Claim
48 words
A fuse circuit according to claim 1, further comprising an electrical blowing circuit for the blowing of the physical fuse that can be activated by a blowing command signal, wherein the electrically programmable non-volatile memory cell is connected to a programming circuit that receives the blowing command signal.
Claim 6
Dependent Claim
34 words
A fuse circuit according to claim 4, wherein the electrical blowing circuit comprises a transistor connected between a blowing voltage source and the physical fuse, said physical fuse being connected to a ground potential.
Claim 7
Dependent Claim
18 words
A fuse circuit according to claim 1, wherein the electrically programmable non-volatile memory cell comprises a floating-gate transistor.
Claim 8
Dependent Claim
43 words
A fuse circuit according to claim 6, wherein the floating-gate transistor is connected to a terminal of the physical fuse capable of receiving a programming voltage and to a control transistor, a drain of the control transistor being connected to a ground potential.
Claim 9
Dependent Claim
47 words
A fuse circuit according to claim 7, wherein the control transistor is conductive before a blowing stage and after the blowing stage so as to connect the floating-gate transistor to the ground potential and to receive, during the blowing stage, a logic complement of a break-down signal.
Claim 10
Dependent Claim
97 words
A fuse circuit according to claim 1, wherein the physical fuse and the electrically programmable non-volatile memory cell are connected to a node, the physical fuse lets through a first current from the node towards a ground potential when the physical fuse is in the blow state, the electrically programmable non-volatile memory cell lets through a second current from the node towards the ground potential when the electrically programmable non-volatile memory cell is in the programmed state and the detection circuit is connected to the node and comprises a circuit to measure current consumed by the node.
Claim 11
Dependent Claim
48 words
A fuse circuit according to claim 2, further comprising an electrical blowing circuit for the blowing of the physical fuse that can be activated by a blowing command signal, wherein the electrically programmable non-volatile memory cell is connected to a programming circuit that receives the blowing command signal.
Claim 12
Dependent Claim
34 words
A fuse circuit according to claim 10, wherein the electrical blowing circuit comprises a transistor connected between a blowing voltage source and the physical fuse, said physical fuse being connected to a ground potential.
Claim 13
Dependent Claim
97 words
A fuse circuit according to claim 11, wherein the physical fuse and the electrically programmable non-volatile memory cell are connected to a node, the physical fuse lets through a first current from the node towards the ground potential when the physical fuse is in the blown state, the electrically programmable non-volatile memory cell lets through a second current from the node towards the ground potential when the electrically programmable non-volatile memory cell is in the programmed state and the detection circuit is connected to the node and comprises a circuit to measure current consumed by the node.
Claim 14
Dependent Claim
97 words
A fuse circuit according to claim 10, wherein the physical fuse and the electrically programmable non-volatile memory cell are connected to a node, the physical fuse lets through a first current from the node towards a ground potential when the physical fuse is in the blown state, the electrically programmable non-volatile memory cell lets through a second current from the node towards the ground potential when the electrically programmable non-volatile memory cell is in the programmed state and the detection circuit is connected to the node and comprises a circuit to measure current consumed by the node.
Claim 15
Dependent Claim
48 words
A fuse circuit according to claim 3, further comprising an electrical blowing circuit for the blowing of the physical fuse that can be activated by a blowing command signal, wherein the electrically programmable non-volatile memory cell is connected to a programming circuit that receives the blowing command signal.
Claim 16
Dependent Claim
34 words
A fuse circuit according to claim 14, wherein the electrical blowing circuit comprises a transistor connected between a blowing voltage source and the physical fuse, said physical fuse being connected to a ground potential.
Claim 17
Dependent Claim
97 words
A fuse circuit according to claim 15, wherein the physical fuse and the electrically programmable non-volatile memory cell are connected to a node, the physical fuse lets through a first current from the node towards the ground potential when the physical fuse is in a blown state, the electrically programmable non-volatile memory cell lets through a second current from the node towards the ground potential when the electrically programmable non-volatile memory cell is in the programmed state and the detection circuit is connected to the node and comprises a circuit to measure current consumed by the node.
Claim 18
Dependent Claim
97 words
A fuse circuit according to claim 5, wherein the physical fuse and the electrically programmable non-volatile memory cell are connected to a node, the physical fuse lets through a first current from the node towards the ground potential when the physical fuse is in a blown state, the electrically programmable non-volatile memory cell lets through a second current from the node towards the ground potential when the electrically programmable non-volatile memory cell is in the programmed state and the detection circuit is connected to the node and comprises a circuit to measure current consumed by the node.
Claim 19
Dependent Claim
97 words
A fuse circuit according to claim 6, wherein the physical fuse and the electrically programmable non-volatile memory cell are connected to a node, the physical fuse lets through a first current from the node towards the ground potential when the physical fuse is in the blown state, the electrically programmable non-volatile memory cell lets through a second current from the node towards the ground potential when the electrically programmable non-volatile memory cell is in the programmed state and the detection circuit is connected to the node and comprises a circuit to measure current consumed by the node.
Claim 20
Dependent Claim
97 words
A fuse circuit according to claim 7, wherein the physical fuse and the electrically programmable non-volatile memory cell are connected to a node, the physical fuse lets through a first current from the node towards the ground potential when the physical fuse is in a blown state, the electrically programmable non-volatile memory cell lets through a second current from the node towards the ground potential when the electrically programmable non-volatile memory cell is in the programmed state and the detection circuit is connected to the node and comprises a circuit to measure current consumed by the node.
Claim 21
Dependent Claim
97 words
A fuse circuit according to claim 8, wherein the physical fuse and the electrically programmable non-volatile memory cell are connected to a node, the physical fuse lets through a first current from the node towards the ground potential when the physical fuse is in the blown state, the electrically programmable non-volatile memory cell lets through a second current from the node towards the ground potential when the electrically programmable non-volatile memory cell is in the programmed state and the detection circuit is connected to the node and comprises a circuit to measure current consumed by the node.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-14 | 1999-02-13 | 1999-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-14 | 2003-02-13 | 2003-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-14 | 2007-02-13 | 2007-08-15 | $7700.00 | Window Closed / Lapsed |