Patent US5441600A successfully refreshed from Google Patents.
US5441600A
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Methods for anisotropic etching of (100) silicon
Assignee: Boston University
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Filing: 1993-07-09
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Granted: 1995-08-15
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Expires: 2013-07-09
Abstract
Abstract Extremely high aspect ratio vertical walls may be constructed using sodium hydroxide etches of (100) orientation silicon. Mask bodies 18a, 18b and 18c are used to form vertical wall sections 20a, 20b and 20c from a silicon substrate 10.
Inventors
- 👤 Jan G. Smits
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:04
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
146 words
A method for forming a structure in a substrate, comprising the steps of: providing a crystalline substrate having (100) crystal orientation and a substantially planar outer surface: forming a wall in the substrate at an angle to the outer surface of greater than cos -1 (1/√ 3 ) degrees by etching with an alkali hydroxide wherein said step of forming a wall comprises the step of forming a wall in the (100) plane perpendicular to the outer surface; and forming a mask, which has edges aligned with the (100) crystal orientation, disposed outwardly from the outer surface and covering portions of the outer surfaces; and etching the substrate not covered by the mask; wherein said step of etching comprises the step of etching the substrate at a temperature of about 25 degrees centigrade and subsequently etching the substrate at a temperature of about 50 degrees centigrade.
Claim 2
Independent Claim
146 words
A method for forming a structure in a substrate, comprising the steps of: providing a crystalline substrate having (100) crystal orientation and a substantially planar outer surface: forming a wall in the substrate at an angle to the outer surface of greater than cos -1 (1/√ 3 ) degrees by etching with an alkali hydroxide wherein said step of forming a wall comprises the step of forming a wall in the (100) plane perpendicular to the outer surface; and forming a mask, which has edges aligned with the (100) crystal orientation, disposed outwardly from the outer surface and covering portions of the outer surfaces; and etching the substrate not covered by the mask; wherein said step of etching comprises the step of etching the substrate at a temperature of about 25 degrees centigrade and subsequently etching the substrate at a temperature of about 50 degrees centigrade.
Claim 3
Dependent Claim
28 words
The method of claim 1 wherein said step of forming a wall comprises the step of forming a wall in the (100) plane perpendicular to the outer surface.
Claim 4
Dependent Claim
31 words
The method of claim 1 wherein said step of forming a mask comprises the step of growing a layer of silicon dioxide on an outer surface of a substrate comprising silicon.
Claim 5
Dependent Claim
25 words
The method of claim 1 wherein said step of etching comprises the step of etching the substrate not covered by the mask using sodium hydroxide.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-14 | 1999-02-13 | 1999-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-14 | 2003-02-13 | 2003-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-14 | 2007-02-13 | 2007-08-15 | $7700.00 | Window Closed / Lapsed |