US5437762A
Expired / Lapsed
US
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Method and apparatus for semiconductor memory
Assignee: Siemens AG
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Filing: 1994-07-13
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Granted: 1995-08-01
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Expires: 2014-07-13
Abstract
Abstract The invention concerns a method of forming various kinds of SOI structures and semiconductor memory devices using the forming technique. It is useful, for example, in SRAM or EEPROM devices. In EEPROM, it relates, in particular, to a method of manufacturing a non-volatile memory device in which a control gate electrode layer is laminated by way of an insulator film on a floating gate electrode layer. It includes a method of manufacturing a structure via the steps of forming an etching stopping layer on the surface of a silicon substrate, forming an epitaxially grown silicon layer on said etching stopping layer, bonding said silicon substrate formed with said silicon layer with another substrate as the insulator substrate, grinding said silicon substrate from the rear face and etching it until said etching stopping layer is exposed and removing said etching stopper layer, with or without polishing the other surface of said silicon substrate.
Inventors
- 👤 Akihiko Ochiai
- 👤 Makoto Hashimoto
- 👤 Takeshi Matsushita
- 👤 Machio Yamagishi
- 👤 Hiroshi Sato
- 👤 Muneharu Shimanoe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:54
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; H10D; H10D64/00; H10D64/01; H10D64/031; H10D64/035; H10D86/00; H10D86/01; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/011; H10W10/014; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
116 words
A method of manufacturing a SOI substrate forming a thin film of a silicon layer on an insulator substrate by bonding a substrate, wherein the method comprises successively: forming an etching stopping layer on the surface of a silicon substrate, forming an epitaxially grown polycrystalline silicon layer having a rectangular step on said etching stopping layer, bonding said silicon substrate formed with said silicon layer with another substrate as the insulator substrate, grinding said silicon substrate from the rear face to such an extent as not to expose said etching stopping layer, and etching it using a solution of ethylene diamine and pyrocatechol till said etching stopping layer is exposed and removing said etching stopping layer.
Claim 2
Independent Claim
116 words
A method of manufacturing a SOI substrate forming a thin film of a silicon layer on an insulator substrate by bonding a substrate, wherein the method comprises successively: forming an etching stopping layer on the surface of a silicon substrate, forming an epitaxially grown polycrystalline silicon layer having a rectangular step on said etching stopping layer, bonding said silicon substrate formed with said silicon layer with another substrate as the insulator substrate, grinding said silicon substrate from the rear face to such an extent as not to expose said etching stopping layer, and etching it using a solution of ethylene diamine and pyrocatechol till said etching stopping layer is exposed and removing said etching stopping layer.
Claim 3
Independent Claim
164 words
A method of forming a SOI substrate comprising the steps of forming an insulator layer on one surface of a first silicon substrate, bonding a second substrate to said first silicon substrate formed with said insulator layer, and polishing the other surface of said first silicon substrate, thereby obtaining a SOI structure in which a silicon portion is present on an insulator portion, wherein the method comprises: patterning one of the surfaces of silicon substrate with a surface relief pattern and forming said insulator portion thereon, forming a first conduction portion at a first position on said insulator portion, forming a connection hole through said insulating layer at a second position and forming a filled connection portion filing said correction hole, forming a groove in said connection portion to form a trench portion, bonding another substrate subsequently, polishing said other surface of said first silicon substrate to form said silicon portion and then forming a second conduction portion at said first and second positions.
Claim 4
Independent Claim
164 words
A method of forming a SOI substrate comprising the steps of forming an insulator layer on one surface of a first silicon substrate, bonding a second substrate to said first silicon substrate formed with said insulator layer, and polishing the other surface of said first silicon substrate, thereby obtaining a SOI structure in which a silicon portion is present on an insulator portion, wherein the method comprises: patterning one of the surfaces of silicon substrate with a surface relief pattern and forming said insulator portion thereon, forming a first conduction portion at a first position on said insulator portion, forming a connection hole through said insulating layer at a second position and forming a filled connection portion filing said correction hole, forming a groove in said connection portion to form a trench portion, bonding another substrate subsequently, polishing said other surface of said first silicon substrate to form said silicon portion and then forming a second conduction portion at said first and second positions.
Claim 5
Independent Claim
172 words
A method of forming a SOI substrate comprising the steps of forming a insulator layer on one surface of a first silicon substrate, bonding a second substrate to said first silicon substrate formed with said insulator layer and polishing the other surface of said first silicon substrate, thereby obtaining a SOI structure in which a silicon portion is present on an insulator portion, wherein the method comprises: patterning said one of said first silicon substrate with a surface relief pattern to form said insulator portion thereon, forming an opening at a first position in said insulator portion, forming a connection hole through said insulation portion at a second position, filling said opening to form a first conduction portion and filling said connection hole to form a connection portion, forming a groove in said connection portion to form a trench portion, bonding a said second substrate subsequently, polishing the other surface of said first silicon substrate to form said silicon portion and then forming a conduction portion at said first and second positions.
Claim 6
Independent Claim
172 words
A method of forming a SOI substrate comprising the steps of forming a insulator layer on one surface of a first silicon substrate, bonding a second substrate to said first silicon substrate formed with said insulator layer and polishing the other surface of said first silicon substrate, thereby obtaining a SOI structure in which a silicon portion is present on an insulator portion, wherein the method comprises: patterning said one of said first silicon substrate with a surface relief pattern to form said insulator portion thereon, forming an opening at a first position in said insulator portion, forming a connection hole through said insulation portion at a second position, filling said opening to form a first conduction portion and filling said connection hole to form a connection portion, forming a groove in said connection portion to form a trench portion, bonding a said second substrate subsequently, polishing the other surface of said first silicon substrate to form said silicon portion and then forming a conduction portion at said first and second positions.
Claim 7
Dependent Claim
52 words
The method according to claim 2 wherein said step of forming a first conduction pattern, and said step of forming a filled connected portion are formed simultaneously by forming a polycrystalline silicon layer with simultaneously forming said first connection portion and forming an electrode of a capacitor formed in said trench portion.
Claim 8
Dependent Claim
68 words
The method according to claim 2 including the step of forming an insulating layer on said silicon portion, before forming said conduction portion at said first and second positions, to define a double gate FET, in which said silicon portion forms a channel of said FET, said first conduction portion forms one gate of said FET, and said second conduction portion forms the second gate of said FET.
Claim 9
Dependent Claim
38 words
The method according to claim 5 including the step of using said insulating layer as a stop during the polishing of said other surface of said first silicon substrate, in order to obtain a uniform thin silicon portion.
Claim 10
Independent Claim
21 words
The method according to either of claims 2 and 3 including the step of forming a DRAM using said silicon portion.
Claim 11
Independent Claim
22 words
The method according to either of claims 2 and 3 including the step of form a CCD device using said silicon portion.
Claim 12
Independent Claim
23 words
The method according to either of claims 2 and 3 including the step of forming a gate array device, using said silicon portion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-31 | 1999-01-30 | 1999-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-31 | 2003-01-30 | 2003-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-31 | 2007-01-30 | 2007-08-01 | $7700.00 | Window Closed / Lapsed |