High energy ion implanted silicon on insulator structure

Claim 1

A method of preparing a silicon on insulator structure having a first insulator layer, a quality thermal oxide layer, a high quality epiless silicon layer coupled to said quality thermal oxide and said high quality silicon layer derived from an as received intrinsic wafer of silicon substrate material, comprising the steps of: (a) implanting MeV energy range dopant ions in a first surface of said wafer of silicon substrate material, said implanted ions forming a single type of uncompensated dopant atom layer therein; (b) forming a quality thermal oxide layer on said silicon substrate material; (c) forming said first insulator layer on said quality thermal oxide; (d) coupling a second insulator layer to said first insulator layer, a passive silicon substrate coupled to said second insulator layer; (e) etching with a first etchant said silicon substrate material until reaching said dopant atom layer; and (f) etching with a second etchant said dopant atom layer to remove substantially all of said dopant layer, leaving a high quality epiless silicon on said quality oxide coupled to said first insulator layer, said high quality oxide formed by an epiless process.

Claim 2

A method of preparing a silicon on insulator structure having a first insulator layer, a quality thermal oxide layer, a high quality epiless silicon layer coupled to said quality thermal oxide and said high quality silicon layer derived from an as received intrinsic wafer of silicon substrate material, comprising the steps of: (a) implanting MeV energy range dopant ions in a first surface of said wafer of silicon substrate material, said implanted ions forming a single type of uncompensated dopant atom layer therein; (b) forming a quality thermal oxide layer on said silicon substrate material; (c) forming said first insulator layer on said quality thermal oxide; (d) coupling a second insulator layer to said first insulator layer, a passive silicon substrate coupled to said second insulator layer; (e) etching with a first etchant said silicon substrate material until reaching said dopant atom layer; and (f) etching with a second etchant said dopant atom layer to remove substantially all of said dopant layer, leaving a high quality epiless silicon on said quality oxide coupled to said first insulator layer, said high quality oxide formed by an epiless process.

Claim 7

A method of preparing a layered silicon on insulator structure, comprising the steps of: (a) implanting a narrow peak of MeV energy range single type of dopant atoms in an epiless silicon substrate material said dopant atoms being uncompensated after deposition; (b) etching said silicon substrate material and removing part of said silicon substrate material through said narrow peak profile of MeV energy range dopant atoms leaving part of said epiless silicon substrate material; (c) coupling a first insulator layer to said silicon substrate material; (d) coupling a second insulator layer to said first insulator layer; and (e) coupling a passive silicon substrate material to said second insulator layer.

Claim 8

A method of preparing a layered silicon on insulator structure, comprising the steps of: (a) implanting a narrow peak of MeV energy range single type of dopant atoms in an epiless silicon substrate material said dopant atoms being uncompensated after deposition; (b) etching said silicon substrate material and removing part of said silicon substrate material through said narrow peak profile of MeV energy range dopant atoms leaving part of said epiless silicon substrate material; (c) coupling a first insulator layer to said silicon substrate material; (d) coupling a second insulator layer to said first insulator layer; and (e) coupling a passive silicon substrate material to said second insulator layer.

Claim 9

A method of preparing a silicon on insulator structure for use as a starting material for an integrated circuit, comprising the steps of: (a) preparing a starting epiless silicon substrate material having a thickness less than about 0.3 microns, and a single type of uncompensated dopant concentration less than about 5×10 16 /cm 3 ; (b) preparing a first insulator layer and coupling said insulator layer to said silicon substrate material; (c) coupling a second insulator layer to said first insulator layer; and (d) coupling a passive silicon substrate material to said second insulator layer.

Claim 10

A method of preparing a silicon on insulator structure for use as a starting material for an integrated circuit, comprising the steps of: (a) preparing a starting epiless silicon substrate material having a thickness less than about 0.3 microns, and a single type of uncompensated dopant concentration less than about 5×10 16 /cm 3 ; (b) preparing a first insulator layer and coupling said insulator layer to said silicon substrate material; (c) coupling a second insulator layer to said first insulator layer; and (d) coupling a passive silicon substrate material to said second insulator layer.

Claim 11

A method of preparing a layered silicon on insulator structure for use as a starting material for an integrated circuit, comprising the steps of: (a) preparing an epiless silicon substrate material having a single type of uncompensated dopant concentration less than about 5×10 16 /cm 3 ; (b) etching said silicon substrate material to remove an ion implantation damage layer and further removing another layer of said silicon substrate material containing MeV energy range implanted dopant atoms; (c) coupling a first insulator layer to said silicon substrate material; (d) coupling a second insulator layer to said first insulator layer; and (e) coupling a passive silicon substrate material to said second insulator layer.

Claim 12

A method of preparing a layered silicon on insulator structure for use as a starting material for an integrated circuit, comprising the steps of: (a) preparing an epiless silicon substrate material having a single type of uncompensated dopant concentration less than about 5×10 16 /cm 3 ; (b) etching said silicon substrate material to remove an ion implantation damage layer and further removing another layer of said silicon substrate material containing MeV energy range implanted dopant atoms; (c) coupling a first insulator layer to said silicon substrate material; (d) coupling a second insulator layer to said first insulator layer; and (e) coupling a passive silicon substrate material to said second insulator layer.

Claim 16

A method of preparing a silicon on insulator structure having an epiless, quality silicon layer disposed on a first insulator layer and said high quality silicon layer derived from an as received intrinsic wafer of silicon substrate material by the steps comprising: (a) implanting MeV energy range dopant ions in a first surface of said wafer of silicon substrate material, said implanted ions forming a narrow profile dopant atoms layer therein of a single type of uncompensated dopant atom concentration less than about 5×10 16 /cm 3 ; (b) forming said first insulator layer on a second surface of said silicon substrate material; (c) coupling a second insulator layer to said fist insulator layer, a passive silicon substrate coupled to said second insulator layer; (d) etching with a first etchant said silicon substrate material until reaching said implanted dopant atom layer; and (e) etching with a second etchant said dopant atom layer, leaving said epiless, high quality silicon on said first insulator layer.

Claim 17

A method of preparing a silicon on insulator structure having an epiless, quality silicon layer disposed on a first insulator layer and said high quality silicon layer derived from an as received intrinsic wafer of silicon substrate material by the steps comprising: (a) implanting MeV energy range dopant ions in a first surface of said wafer of silicon substrate material, said implanted ions forming a narrow profile dopant atoms layer therein of a single type of uncompensated dopant atom concentration less than about 5×10 16 /cm 3 ; (b) forming said first insulator layer on a second surface of said silicon substrate material; (c) coupling a second insulator layer to said fist insulator layer, a passive silicon substrate coupled to said second insulator layer; (d) etching with a first etchant said silicon substrate material until reaching said implanted dopant atom layer; and (e) etching with a second etchant said dopant atom layer, leaving said epiless, high quality silicon on said first insulator layer.

Claim 18

A method of forming an epiless semiconductor on insulator structure, comprising the steps of: (a) implanting MeV energy range intrinsic ions in a first surface of a semiconductor substrate material, the energy and flux of said ions sufficient to cause amorphization of a layer of said semiconductor substrate material and implanted intrinsic ions forming an uncompensated layer in said semiconductor substrate material; (b) etching said semiconductor substrate material and removing said semiconductor to about the end of said amorphised layer leaving at lest part of said epiless semiconductor substrate material; (c) coupling a first insulator layer to said semiconductor substrate material; and (d) coupling a passive semiconductor substrate material to said first insulator layer.

Claim 19

A method of forming an epiless semiconductor on insulator structure, comprising the steps of: (a) implanting MeV energy range intrinsic ions in a first surface of a semiconductor substrate material, the energy and flux of said ions sufficient to cause amorphization of a layer of said semiconductor substrate material and implanted intrinsic ions forming an uncompensated layer in said semiconductor substrate material; (b) etching said semiconductor substrate material and removing said semiconductor to about the end of said amorphised layer leaving at lest part of said epiless semiconductor substrate material; (c) coupling a first insulator layer to said semiconductor substrate material; and (d) coupling a passive semiconductor substrate material to said first insulator layer.