Shallow SIMOX processing method using molecular ion implantation

Claim 1

In a silicon substrate, a method of producing a shallow-buried dielectric layer beneath a surface layer of monocrystalline silicon in which semiconductor devices are formed, the method comprising the following steps: (a) providing an ion implantation beam of molecular ions formed of molecules of an insulating element selected from the following: (1) oxygen or (2) nitrogen; (b) using the molecular ion implantation beam provided in step (a), directing an implant dose of the selected molecular ions in the range of about 0.6×10 17 to 2.5×10 17 molecular ions/cm 2 through a first surface of a monocrystalline silicon substrate with an implantation energy in the range of about 60 KeV to 90 KeV to produce an implanted layer of the selected insulating element within the substrate having a peak concentration less than 1000 Å beneath the first surface of the substrate; (c) annealing the substrate to cause the implanted selected insulating element to react with the silicon of the substrate and form a layer of buried dielectric material having a thickness of less than 1000 Å beneath a surface layer of monocrystalline silicon having a thickness of less than 1000 Å.

Claim 7

A method of forming a shallow SIMOX substrate having a buried insulating layer with a thickness of less than 1000 Å and having a superficial layer of monocrystalline silicon less than 1000 Å thick in which semiconductor devices are formed, the method comprising: (a) providing a silicon substrate having a first surface; (b) forming a beam of molecular oxygen ions having an implantation energy in the range of about 60 KeV to 90 KeV; (c) providing an ambient temperature for the silicon substrate in the range of about 450° C. to 800° C.; (d) using the beam provided in step (b), implanting a dose of molecular oxygen ions into the silicon substrate through said first surface, the implant dose being in the range of about 0.6×10 17 to 2.5×10 17 molecular oxygen ions/cm 2 , to produce an implanted layer of oxygen within the substrate having a peak concentration less than 1000 Å beneath the first surface of the substrate; and (e) annealing the substrate at a temperature of about 1300° C. in an ambient atmosphere which is predominately one of the following gasses: nitrogen and argon, to cause the implanted oxygen to react with the silicon of the substrate and form a layer of silicon dioxide (SiO 2 ) having a thickness of less than 1000 Å beneath a surface layer of monocrystalline silicon having a thickness of less than 1000 Å, thereby forming a shallow SIMOX substrate.

Claim 8

A method of forming a shallow SIMOX substrate having a buried insulating layer with a thickness of less than 1000 Å and having a superficial layer of monocrystalline silicon less than 1000 Å thick in which semiconductor devices are formed, the method comprising: (a) providing a silicon substrate having a first surface; (b) forming a beam of molecular oxygen ions having an implantation energy in the range of about 60 KeV to 90 KeV; (c) providing an ambient temperature for the silicon substrate in the range of about 450° C. to 800° C.; (d) using the beam provided in step (b), implanting a dose of molecular oxygen ions into the silicon substrate through said first surface, the implant dose being in the range of about 0.6×10 17 to 2.5×10 17 molecular oxygen ions/cm 2 , to produce an implanted layer of oxygen within the substrate having a peak concentration less than 1000 Å beneath the first surface of the substrate; and (e) annealing the substrate at a temperature of about 1300° C. in an ambient atmosphere which is predominately one of the following gasses: nitrogen and argon, to cause the implanted oxygen to react with the silicon of the substrate and form a layer of silicon dioxide (SiO 2 ) having a thickness of less than 1000 Å beneath a surface layer of monocrystalline silicon having a thickness of less than 1000 Å, thereby forming a shallow SIMOX substrate.