US5434448A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Programmable contact structure
Assignee: STMicroelectronics lnc USA
•
Filing: 1994-09-16
•
Granted: 1995-07-18
•
Expires: 2014-09-16
Abstract
Abstract A programmable semiconductor contact structure and method are provided. A semiconductor substrate has a first patterned conductive layer for forming an interconnect. A first insulating layer overlies the first patterned conductive layer. An opening is formed through the insulating layer to the first patterned conductive layer to form the contact via. A buffer layer overlies portions of the first insulating layer and covers the opening. A second conductive layer overlies the buffer layer. A third conductive layer then overlies the integrated circuit. The buffer layer is a material, such as amorphous silicon, which functions as an anti-fuse and can be programmed by application of a relatively high programming voltage.
Inventors
- 👤 Che-Chia Wei
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:32
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
148 words
A contact structure in an integrated circuit, comprising: a semiconductor substrate having a first patterned metal interconnect layer, wherein the first patterned metal interconnect layer forms an interconnect; a first insulating layer overlying the first patterned metal interconnect layer; an opening through the first insulating layer to the first patterned metal interconnect layer; a first titanium nitride layer overlying portions of the first insulating layer and extending into the opening to contact the first patterned metal interconnect layer exposed through the opening; an amorphous silicon layer overlying the first titanium nitride layer; a second titanium nitride layer overlying the amorphous silicon layer; insulating sidewalls surrounding the first titanium nitride layer, amorphous silicon layer, and second titanium nitride layer; and a second patterned metal interconnect layer overlying the first insulating layer, the insulating sidewalls, and the second titanium nitride layer, and in contact with the second titanium nitride layer.
Claim 2
Dependent Claim
148 words
A contact structure in an integrated circuit, comprising: a semiconductor substrate having a first patterned metal interconnect layer, wherein the first patterned metal interconnect layer forms an interconnect; a first insulating layer overlying the first patterned metal interconnect layer; an opening through the first insulating layer to the first patterned metal interconnect layer; a first titanium nitride layer overlying portions of the first insulating layer and extending into the opening to contact the first patterned metal interconnect layer exposed through the opening; an amorphous silicon layer overlying the first titanium nitride layer; a second titanium nitride layer overlying the amorphous silicon layer; insulating sidewalls surrounding the first titanium nitride layer, amorphous silicon layer, and second titanium nitride layer; and a second patterned metal interconnect layer overlying the first insulating layer, the insulating sidewalls, and the second titanium nitride layer, and in contact with the second titanium nitride layer.
Claim 3
Dependent Claim
16 words
The contact structure according to claim 1, wherein the first patterned metal interconnect layer comprises aluminum.
Claim 4
Dependent Claim
14 words
The contact structure according to claim 1, wherein the first insulating layer comprises oxide.
Claim 5
Dependent Claim
16 words
The contact structure according to claim 1, wherein the second patterned metal interconnect layer comprises aluminum.
Claim 6
Dependent Claim
15 words
The contact structure according to claim 1, wherein the insulating sidewalls are formed from oxide.
Claim 7
Dependent Claim
127 words
A programmable contact structure for an integrated circuit, comprising: a first, patterned, interconnect layer; an insulating layer overlying the first interconnect layer, and having an opening therethrough to expose a portion of the first interconnect layer; a second, highly conductive, layer overlying portions of the first insulating layer and extending into the opening to contact the first patterned conductive layer exposed through the opening; an amorphous silicon layer overlying the second, highly conductive, layer; a third, highly conductive, layer overlying the amorphous silicon layer; insulating sidewalls surrounding the second, highly conductive, layer, the amorphous silicon layer, and third, highly conductive, conductive layer; and a second, patterned, interconnect layer overlying the third, highly conductive, layer, and at least a portion of the insulating sidewalls and the insulating layer.
Claim 8
Dependent Claim
127 words
A programmable contact structure for an integrated circuit, comprising: a first, patterned, interconnect layer; an insulating layer overlying the first interconnect layer, and having an opening therethrough to expose a portion of the first interconnect layer; a second, highly conductive, layer overlying portions of the first insulating layer and extending into the opening to contact the first patterned conductive layer exposed through the opening; an amorphous silicon layer overlying the second, highly conductive, layer; a third, highly conductive, layer overlying the amorphous silicon layer; insulating sidewalls surrounding the second, highly conductive, layer, the amorphous silicon layer, and third, highly conductive, conductive layer; and a second, patterned, interconnect layer overlying the third, highly conductive, layer, and at least a portion of the insulating sidewalls and the insulating layer.
Claim 9
Dependent Claim
15 words
The programmable contact structure of claim 6, wherein the first, patterned, interconnect layer comprises aluminum.
Claim 10
Dependent Claim
13 words
The programmable contact structure of claim 6, wherein the insulating layer comprises oxide.
Claim 11
Dependent Claim
19 words
The programmable contact structure of claim 6, wherein both the second and third, highly conductive, layers comprises titanium nitride.
Claim 12
Dependent Claim
13 words
The programmable contact structure of claim 6, wherein the insulating sidewalls comprise oxide.
Claim 13
Dependent Claim
15 words
The programmable contact structure of claim 6, wherein the second, patterned, interconnect layer comprises aluminum.
References Cited (Backward Citations)
US4203123A
Cited
US4471376A
Cited
US4651409A
Cited
US4823181A
Cited
JPH01136352A
Cited
US4872050A
Cited
JPH0235769A
Cited
JPH02288361A
Cited
EP0414361A2
Cited
EP0416903A2
Cited
US5095362A
Cited
US5166556A
Cited
US5100827A
Cited
WO1992016976A1
Cited
US5120679A
Cited
US5272666A
Cited
EP0558176A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-17 | 1999-01-16 | 1999-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-17 | 2003-01-16 | 2003-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-17 | 2007-01-16 | 2007-07-18 | $7700.00 | Window Closed / Lapsed |