Method of forming an electrical connection

Claim 1

An electrical interconnection method comprising: providing inner and outer conductive layers separated by an insulating material on a semiconductor wafer; etching the conductive layers and insulating material to define and outwardly expose a sidewall of the outer conductive layer and to outwardly expose the inner conductive layer; depositing an electrically conductive material over the etched conductive layers, the electrically conductive material contacting the outer conductive layer exposed sidewall and exposed inner conductive layer; anisotropically etching the conductive material to define an electrically conductive sidewall link electrically interconnecting the two conductive layers; and further comprising: prior to depositing and anisotropic etching of the electrically conductive material, providing a layer of insulating dielectric material over the etched conductive layers and insulating material; anisotropically etching the insulating dielectric layer to define an insulating sidewall spacer, the sidewall spacer leaving the outer conductive layer sidewall and inner conductive layer outwardly exposed; and the electrically conductive material being deposited over the sidewall spacer.