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US5433975A
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Deposition of tungsten films from mixtures of tungsten hexafluoride organohydrosilanes and hydrogen
Assignee: Air Products and Chemicals Inc
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Filing: 1993-09-02
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Granted: 1995-07-18
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Expires: 2013-09-02
Abstract
Abstract A method of depositing tungsten films comprising heating a substrate to a temperature above 200 DEG C. in a chemical vapor deposition reactor, flowing a stream of carrier gas over the substrate in the reactor, and simultaneously introducing mixtures of WF6 and organohydrosilanes into the reactor.
Inventors
- 👤 David A. Roberts
- 👤 Diwakar Garg
- 👤 Andre Lagendijk
- 👤 Arthur K. Hochberg
- 👤 Stephen M. Fine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/08; C23C16/14; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
114 words
The method of depositing a tungsten film comprising the steps of: heating a substrate to a temperature above 200° C. under subatmospheric to atmospheric pressure in a chemical vapor deposition reactor; and following stream of hydrogen gas over the substrate in the reactor; and simultaneously introducing into said reactor mixtures of WF 6 and n organohydrosilane having the general formula: ##STR5## wherein: R 1 , R 2 , R 3 , and R 4 are selected from the group comprising hydrogen, a C 1 to C 10 alkyl group, a C 6 to C 10 aryl or aralkyl, or mixtures thereof with at least one but not all of the R groups being H.
Claim 2
Independent Claim
114 words
The method of depositing a tungsten film comprising the steps of: heating a substrate to a temperature above 200° C. under subatmospheric to atmospheric pressure in a chemical vapor deposition reactor; and following stream of hydrogen gas over the substrate in the reactor; and simultaneously introducing into said reactor mixtures of WF 6 and n organohydrosilane having the general formula: ##STR5## wherein: R 1 , R 2 , R 3 , and R 4 are selected from the group comprising hydrogen, a C 1 to C 10 alkyl group, a C 6 to C 10 aryl or aralkyl, or mixtures thereof with at least one but not all of the R groups being H.
Claim 3
Dependent Claim
57 words
The method of claim 1 wherein the organohydrosilane moieties R 1 , R 2 , R 3 , and R 4 would also include the organosilyl radical, of the type: ##STR6## wherein: R 5 , R 6 , and R 7 are selected from the group comprising of hydrogen, C 1 -C 10 alkyl, or mixtures thereof.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein the deposition temperature is between 200° C. to about 450° C.
Claim 5
Dependent Claim
16 words
The method of claim 3 wherein the deposition temperature is between 220° C. and 380° C.
Claim 6
Dependent Claim
16 words
The method of claim 3 wherein the deposition temperature is between 200° C. and 360° C.
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein the reactor pressure in the reactor is selected from about 0.05 to 1000 torr.
Claim 8
Dependent Claim
16 words
The method of claim 1 wherein the organohydrosilane to WF 6 ratio is less than 1.5.
Claim 9
Dependent Claim
35 words
The method of claim 1 wherein the organohydrosilane is a dialkylsilane of the type: ##STR7## wherein: R 1 and R 2 are selected from the group comprising a C 1 to C 6 alkyl group.
Claim 10
Dependent Claim
10 words
The method of claim 8 wherein the organohydrosilane is diethylsilane.
Claim 11
Dependent Claim
10 words
The method of claim 8 wherein the organohydrosilane is dimethylsilane.
Claim 12
Dependent Claim
38 words
The method of claim 1 wherein the organohydrosilane is a monoalkylsilane of the type: ##STR8## wherein: R is selected from the group comprising a C 1 to C 10 alkyl, a C 6-C 10 aryl, or aralkyl group.
Claim 13
Dependent Claim
10 words
The method of claim 11 wherein the organohydrosilane is methylsilane.
Claim 14
Dependent Claim
10 words
The method of claim 11 wherein the organohydrosilane is butylsilane.
Claim 15
Dependent Claim
38 words
The method of claim 1 wherein the organohydrosilane is a trialkylsilane of the type: ##STR9## wherein: R 1 , R 2 , and R 3 are selected from the group comprising a C 1 to C 6 alkyl.
Claim 16
Dependent Claim
10 words
The method of claim 14 wherein the organohydrosilane is dimethylethylsilane.
Claim 17
Dependent Claim
28 words
The method of claim 1 wherein the organohydrosilane is diethylsilane and the substrate temperature is 325° C., whereby the as deposited tungsten film exhibits a columnar growth microstructure.
Claim 18
Dependent Claim
35 words
The method of claim 1 wherein the organohydrosilane is dimethylethylsilane, the substrate temperature is 325° C., and argon is mixed with said hydrogen, whereby the as deposited tungsten film exhibits a non-columnar, fine-grained growth microstructure.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-17 | 1999-01-16 | 1999-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-17 | 2003-01-16 | 2003-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-17 | 2007-01-16 | 2007-07-18 | $7700.00 | Window Closed / Lapsed |