Patent US5429990A successfully refreshed from Google Patents.
US5429990A
Expired / Lapsed
US
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Spin-on-glass planarization process with ion implantation
Assignee: United Microelectronics Corp
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Filing: 1994-04-08
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Granted: 1995-07-04
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Expires: 2014-04-08
Abstract
Abstract A new method of planarizing an integrated circuit is achieved. The dielectric layers between the conductive layers of an integrated circuit are formed and planarized via A first silicon oxide layer is deposited over the metal layer. This is covered with a spin-on-glass layer. This layer is dried by baking. The spin-on-glass layer is now fully cured. The cured spin-on-glass layer is now ion implanted under the conditions of between about 1E15 to 1E17 atoms/cm2 and energy between about 50 to 100 KeV. A silicon oxide layer is deposited thereover. Via openings are now made through the silicon oxide layers and the spin-on-glass layer and filled with metal. This results in excellent planarity with no poisoned via problems. Most importantly, this method can be used for submicron technologies having conductor lines which are spaced from one another by submicron feature size and can be processed without the use of an etch-back process for the cured spin on and glass layer.
Inventors
- 👤 Ming-Tsung Liu
- 👤 Jeffrey Wang
- 👤 Wen Yang Chen
- 👤 D. Y. Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:35
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
188 words
The method of providing a high quality spin-on-glass layer of a planarized MOSFET multilayered metal structure having no poisoned via problem and without the use of etch-back of the spin-on-glass layer comprising: providing a MOSFET semiconductor structure in and on a semiconductor substrate; providing conductive layers for contacting the active elements of said MOSFET structure; providing a layer of an insulator over said conductive layers and a spin-on-glass layer over said layer of an insulator; curing said spin-on-glass layer using heat; treating the cured said spin-on-glass by ion implantation of phosphorus ions into said cured spin-on-glass layer; the said ions are of sufficient dosage and energy that the action of said ions moving through the complete thickness of said spin-on-glass layer to cause changes in said spin-on-glass which result in said high quality and freedom from said poisoned via problem; forming a insulator layer over said treated spin-on-glass layer; forming openings through said insulator layers and said treated spin-on-glass layer to said conductive layer; and depositing a second conductive layer into said openings to make contact to said conductive layer to complete said planarized MOSFET multilayer metal structure.
Claim 2
Independent Claim
188 words
The method of providing a high quality spin-on-glass layer of a planarized MOSFET multilayered metal structure having no poisoned via problem and without the use of etch-back of the spin-on-glass layer comprising: providing a MOSFET semiconductor structure in and on a semiconductor substrate; providing conductive layers for contacting the active elements of said MOSFET structure; providing a layer of an insulator over said conductive layers and a spin-on-glass layer over said layer of an insulator; curing said spin-on-glass layer using heat; treating the cured said spin-on-glass by ion implantation of phosphorus ions into said cured spin-on-glass layer; the said ions are of sufficient dosage and energy that the action of said ions moving through the complete thickness of said spin-on-glass layer to cause changes in said spin-on-glass which result in said high quality and freedom from said poisoned via problem; forming a insulator layer over said treated spin-on-glass layer; forming openings through said insulator layers and said treated spin-on-glass layer to said conductive layer; and depositing a second conductive layer into said openings to make contact to said conductive layer to complete said planarized MOSFET multilayer metal structure.
Claim 3
Dependent Claim
38 words
The method of claim 1 wherein the dose of said phosphorus ion implant is between 1E15 and 1E17 ions/cm 2 and the said thermally curing is done at a temperature of between about 400° to 430 ° C.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein the energy of said ion implant is between 50 and 100 KeV.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said ion implantation is done within a chamber having a vacuum.
Claim 6
Independent Claim
188 words
The method of providing a high quality spin-on-glass layer of a planarized MOSFET multilayered metal structure having no poisoned via problem and without the use of etch-back of the spin-on-glass layer comprising: providing a MOSFET semiconductor structure in and on a semiconductor substrate; providing conductive layers for contacting the active elements of said MOSFET structure; providing a layer of an insulator over said conductive layers and a spin-on-glass layer over said layer of an insulator; curing said spin-on-glass layer using heat; treating the cured said spin-on-glass by ion implantation of arsenic ions into said cured spin-on-glass layer; the said ions are of sufficient dosage and energy that the action of said ions moving through the complete thickness of said spin-on-glass layer to cause changes in said spin-on-glass which result in said high quality and freedom from said poisoned via problem; forming a insulator layer over said treated spin-on-glass layer; forming openings through said insulator layers and said treated spin-on-glass layer to said conductive layer; and depositing a second conductive layer into said openings to make contact to said conductive layer to complete said planarized MOSFET multilayer metal structure.
Claim 7
Independent Claim
188 words
The method of providing a high quality spin-on-glass layer of a planarized MOSFET multilayered metal structure having no poisoned via problem and without the use of etch-back of the spin-on-glass layer comprising: providing a MOSFET semiconductor structure in and on a semiconductor substrate; providing conductive layers for contacting the active elements of said MOSFET structure; providing a layer of an insulator over said conductive layers and a spin-on-glass layer over said layer of an insulator; curing said spin-on-glass layer using heat; treating the cured said spin-on-glass by ion implantation of arsenic ions into said cured spin-on-glass layer; the said ions are of sufficient dosage and energy that the action of said ions moving through the complete thickness of said spin-on-glass layer to cause changes in said spin-on-glass which result in said high quality and freedom from said poisoned via problem; forming a insulator layer over said treated spin-on-glass layer; forming openings through said insulator layers and said treated spin-on-glass layer to said conductive layer; and depositing a second conductive layer into said openings to make contact to said conductive layer to complete said planarized MOSFET multilayer metal structure.
Claim 8
Dependent Claim
36 words
The method of claim 5 wherein the dose of said Arsenic implant is between 1E15 and 1E17 ions/cm 2 and the said thermally curing is done at a temperature of between about 400° to 430° C.
Claim 9
Dependent Claim
19 words
The method of claim 6 wherein the energy of said Arsenic ion implant is between 50 and 100 KeV.
Claim 10
Dependent Claim
18 words
The method of claim 5 wherein said spin-on-glass layer is composed at least in part of siloxane material.
Claim 11
Independent Claim
190 words
The method of providing a high quality spin-on-glass layer of a planarized MOSFET multilayered metal structure having no poisoned via problem and without the use of etch-back of the spin-on-glass layer comprising: providing a MOSFET semiconductor structure in and on a semiconductor substrate; providing conductive layers for contacting the active elements of said MOSFET structure; providing a layer of an insulator over said conductive layers and a spin-on-glass layer over said layer of an insulator; curing said spin-on-glass layer using heat between about 400° to 430° C.; treating the cured said spin-on-glass by ion implantation of ions into said cured spin-on-glass layer; the said ions are of sufficient dosage and energy that the action of said ions moving through the complete thickness of said spin-on-glass layer to cause changes which result in said high quality and freedom from said poisoned via problem; forming a insulator layer over said treated spin-on-glass layer; forming openings through said insulator layers and said treated spin-on-glass layer to said conductive layer; and depositing a second conductive layer into said openings to make contact to said conductive layer to complete said planarized MOSFET multilayer metal structure.
Claim 12
Independent Claim
190 words
The method of providing a high quality spin-on-glass layer of a planarized MOSFET multilayered metal structure having no poisoned via problem and without the use of etch-back of the spin-on-glass layer comprising: providing a MOSFET semiconductor structure in and on a semiconductor substrate; providing conductive layers for contacting the active elements of said MOSFET structure; providing a layer of an insulator over said conductive layers and a spin-on-glass layer over said layer of an insulator; curing said spin-on-glass layer using heat between about 400° to 430° C.; treating the cured said spin-on-glass by ion implantation of ions into said cured spin-on-glass layer; the said ions are of sufficient dosage and energy that the action of said ions moving through the complete thickness of said spin-on-glass layer to cause changes which result in said high quality and freedom from said poisoned via problem; forming a insulator layer over said treated spin-on-glass layer; forming openings through said insulator layers and said treated spin-on-glass layer to said conductive layer; and depositing a second conductive layer into said openings to make contact to said conductive layer to complete said planarized MOSFET multilayer metal structure.
Claim 13
Dependent Claim
33 words
The method of claim 9 wherein said ions are phosphorus and the dose of said ion implantation is between 1E15 and 1E17 ions/cm 2 and the energy between about 50 to 100 KeV.
Claim 14
Dependent Claim
38 words
The method of claim 9 wherein said ions are Arsenic and the dose of said ion implantation is between about 1E15 to 1E17 ions/cm 2 and the energy of said ion implantation is between 50 and 100 KeV.
Claim 15
Dependent Claim
20 words
The method of claim 9 wherein the thickness of each said spin-on-glass layer is between about 500 to 3000 Angstroms.
Claim 16
Dependent Claim
20 words
The method of claim 9 wherein the said spin-on-glass layer is composed at least in part of a silicate material.
Claim 17
Dependent Claim
20 words
The method of claim 9 wherein the said spin-on-glass layer is composed at least in part of a siloxane material.
References Cited (Backward Citations)
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