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Patent US5423943A successfully refreshed from Google Patents.
US5423943A
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Selective etching method, optoelectronic device and its fabricating method
Assignee: Sony Corp
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Filing: 1994-10-05
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Granted: 1995-06-13
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Expires: 2014-10-05
Abstract
Abstract When a ZnSe, ZnTe or ZnSSe or Zn 1-a Mg a S b Se 1-b (0<a<1, 0<b<1) layer provided on a Zn 1-x Mg x S y Se 1-y (0<x<1, 0<y<1, a<x) layer is selectively etched by a dry etching method such as an RIE method, the Zn 1-x Mg x S y Se 1-y layer is used as an etching stoppig layer. Thus, selective etching of the ZnSe, ZnTe, ZnSSe or Zn 1-a Mg a S b Se 1-b layer can be conducted with excellent controllability and reproducibility.
Inventors
- 👤 Fumiyo Narui
- 👤 Masafumi Ozawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:50
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10P; H10P50/00; H10P50/20; H10P52/00; H10P95/00; H10P95/70; H01S5/10; H01S5/12; H01S5/1231; H01S5/20; H01S5/2054; H01S5/2081; H01S5/209; H01S5/22; H01S5/223; H01S5/2231; Y; Y10; Y10S; Y10S438/00; Y10S438/97
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
72 words
A selective etching method comprising the steps of: providing at least one layer to be etched made of a ZnSe, ZnTe, ZnSSe or Zn 1-a Mg a S b Se 1-b (0<a<1, <b<1) compound semiconductor on an etching stopping layer made of a Zn 1-x Mg x S y Se 1-y (0<x<1, 0<y<1, a<x) compound semiconductor; and selectively etching said at least one layer to be etched by a dry etching method.
Claim 2
Dependent Claim
72 words
A selective etching method comprising the steps of: providing at least one layer to be etched made of a ZnSe, ZnTe, ZnSSe or Zn 1-a Mg a S b Se 1-b (0<a<1, <b<1) compound semiconductor on an etching stopping layer made of a Zn 1-x Mg x S y Se 1-y (0<x<1, 0<y<1, a<x) compound semiconductor; and selectively etching said at least one layer to be etched by a dry etching method.
Claim 3
Dependent Claim
17 words
The method according to claim 1 wherein said dry etching method is a reactive ion etching method.
Claim 4
Independent Claim
70 words
A method for fabricating an optoelectronic device comprising the steps of: providing at least one second layer made of a ZnSe, ZnTe, ZnSSe or Zn 1-a Mg a S b Se 1-b (0<a<1, 0<b<1) compound semiconductor on a first layer made of a Zn 1-x Mg x S y Se 1-y (0<x<1, 0<y<1, a<x) compound semiconductor; and selectively etching said at least one second layer by a dry etching method.
Claim 5
Independent Claim
70 words
A method for fabricating an optoelectronic device comprising the steps of: providing at least one second layer made of a ZnSe, ZnTe, ZnSSe or Zn 1-a Mg a S b Se 1-b (0<a<1, 0<b<1) compound semiconductor on a first layer made of a Zn 1-x Mg x S y Se 1-y (0<x<1, 0<y<1, a<x) compound semiconductor; and selectively etching said at least one second layer by a dry etching method.
Claim 6
Dependent Claim
17 words
The method according to claim 3 wherein said dry etching method is a reactive ion etching method.
Claim 7
Dependent Claim
30 words
The method according to claim 3 wherein said optoelectronic device is a semiconductor laser, said first layer being a carrier blocking layer and said second layer being a cladding layers.
Claim 8
Dependent Claim
36 words
The method according to claim 3 wherein said optoelectronic device is a distributed feedback semiconductor laser, said first layer being an optical waveguide layer and said second layer being a layer for forming a diffraction grating.
References Cited (Backward Citations)
US5132752A
Cited
JPH05127832A
Cited
US5268918A
Cited
US5291507A
Cited
JPH0513755A
Cited
US5294818A
Cited
US5260958A
Cited
US5324963A
Cited
US5319219A
Cited
JPH065920A
Cited
US5373521A
Cited
US5377214A
Cited
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