US5324963A
Expired / Lapsed
US
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Electroluminescent semiconductor device having chalcogenide layer and mixed crystal layer
Assignee: Toshiba Corp
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Filing: 1993-03-12
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Granted: 1994-06-28
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Expires: 2013-03-12
Abstract
Abstract A light-emitting diode has a GaAs substrate, and two ZnSe layers formed on the substrate and having a pn junction. An AuZn electrode is formed on the upper one of the ZnSe layers with a (ZnSe) x (GaAs).sub.(1-x) ohmic contact layer interposed therebetween. The coefficient x of the composition formula is substantially continuously varied from 1.0 to 0 from the ZnSe layer side. An AuGe electrode is formed on the lower surface of the GaAs substrate. The (ZnSe) x (GaAs).sub.(1-x) layer reduces the resistance between the ZnSe layer and AuZn electrode, and also prevents Ga atoms from diffusing into the ZnSe layer.
Inventors
- 👤 Atsushi Kamata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 01:11
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/81; H10H20/816; H10H20/8162; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
114 words
A light-emitting semiconductor device comprising: a semiconductor supporting layer comprising an n-type semiconductor substrate; a first p-type layer grown on said semiconductor supporting layer and comprised of a chalcogenide semiconductor containing one of zinc and cadmium; a second layer grown on said first p-type layer, said second layer being comprised of a mixed crystal semiconductor consisting of Group II, Group III, Group V, and Group VI elements; a first electrode formed on said second layer, said first electrode being comprised of a metal; and a second electrode formed on said semiconductor supporting layer, wherein a contact resistance between said first p-type layer and said first electrode is reduced by interposing therebetween said second layer.
Claim 2
Dependent Claim
114 words
A light-emitting semiconductor device comprising: a semiconductor supporting layer comprising an n-type semiconductor substrate; a first p-type layer grown on said semiconductor supporting layer and comprised of a chalcogenide semiconductor containing one of zinc and cadmium; a second layer grown on said first p-type layer, said second layer being comprised of a mixed crystal semiconductor consisting of Group II, Group III, Group V, and Group VI elements; a first electrode formed on said second layer, said first electrode being comprised of a metal; and a second electrode formed on said semiconductor supporting layer, wherein a contact resistance between said first p-type layer and said first electrode is reduced by interposing therebetween said second layer.
Claim 3
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said mixed crystal semiconductor consists of a II-VI group compound and a III-V group compound.
Claim 4
Dependent Claim
27 words
A semiconductor device according to claim 2, wherein elements contained in said II-VI group compound of said second layer are also contained in said first p-type layer.
Claim 5
Dependent Claim
22 words
A semiconductor device according to claim 3, wherein said second layer contains at least 3% by weight of said II-VI group compound.
Claim 6
Dependent Claim
17 words
A semiconductor device according to claim 3, wherein said second layer has thickness of at least 1000Å.
Claim 7
Dependent Claim
84 words
A semiconductor device according to claim 4, wherein said second layer has a composition such that a percentage by weight of said II-VI group compound is higher than that of said III-V group compound in a portion of said second layer which is adjacent to said first p-type layer, and such that a percentage by weight of said III-V group compound is higher than that of said II-VI group compound in a portion of said second layer which is adjacent to said first electrode.
Claim 8
Dependent Claim
60 words
A semiconductor device according to claim 6, wherein a composition of said second layer gradually varies such that a portion of said second layer which is adjacent to said first p-type layer substantially consists of said II-VI group compound, and a portion of said second layer which is adjacent to said first electrode substantially consists of said III-V group compound.
Claim 9
Dependent Claim
59 words
A semiconductor device according to claim 6, wherein said second layer consists of a plurality of layer elements such that a concentration of said II-VI group compound contained in a given one of said plurality of layer elements increases as a distance between said given one of said plurality of said layer elements and said first p-type layer decreases.
Claim 10
Dependent Claim
38 words
A semiconductor device according to claim 8, wherein a given one of said plurality of said layer elements of said second layer which is directly adjacent to said first p-type layer substantially consists of said II-VI group compound.
Claim 11
Dependent Claim
27 words
A semiconductor device according to claim 3, wherein said II-VI group compound and said III-V group compound of said second layer consist of ZnSe and GaAs, respectively.
Claim 12
Dependent Claim
20 words
A semiconductor device according to claim 10, wherein said first electrode is comprised of a compound containing Au and Zn.
Claim 13
Dependent Claim
101 words
A light-emitting semiconductor device comprising: a semiconductor supporting layer comprising an n-type semiconductor substrate; a first p-type layer grown on said semiconductor supporting layer and comprised of a chalcogenide semiconductor containing one of zinc and cadmium; a second layer grown on said first p-type layer, said second layer being comprised of a II-V group compound; a first electrode formed on said second layer, said first electrode being comprised of a metal; and a second electrode formed on said semiconductor supporting layer, wherein a contact resistance between said first layer and said first electrode is reduced by interposing therebetween said second layer.
Claim 14
Dependent Claim
101 words
A light-emitting semiconductor device comprising: a semiconductor supporting layer comprising an n-type semiconductor substrate; a first p-type layer grown on said semiconductor supporting layer and comprised of a chalcogenide semiconductor containing one of zinc and cadmium; a second layer grown on said first p-type layer, said second layer being comprised of a II-V group compound; a first electrode formed on said second layer, said first electrode being comprised of a metal; and a second electrode formed on said semiconductor supporting layer, wherein a contact resistance between said first layer and said first electrode is reduced by interposing therebetween said second layer.
Claim 15
Dependent Claim
28 words
A semiconductor device according to claim 12, wherein II group elements contained in said second layer are identical to II group elements contained in said first p-type layer.
Claim 16
Dependent Claim
20 words
A semiconductor device according to claim 13, wherein said second layer is comprised of a compound containing Zn and As.
Claim 17
Dependent Claim
21 words
A semiconductor device according to claim 13, wherein said second layer is comprised of a compound containing Cd, Zn, and As.
Claim 18
Dependent Claim
20 words
A semiconductor device according to claim 14, wherein said first layer is comprised of a compound containing Au and Zn.
Claim 19
Dependent Claim
20 words
A semiconductor device according to claim 15, wherein said first layer is comprised of a compound containing Au and Zn.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-27 | 1997-12-27 | 1998-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-27 | 2001-12-27 | 2002-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-27 | 2005-12-27 | 2006-06-28 | $7700.00 | Window Closed / Lapsed |