Blue light emitting diode

Abstract

Abstract PURPOSE:To make it possible to form a highly efficient blue light emitting diode, by sequentially forming chlorine added n-type ZnSe layer and a nitrogen added p-type ZnSe layer by epitaxial growth on a suitable substrate. CONSTITUTION:As a substrate, gallium arsenide or zinc sulfide telluride, both having approximately the same lattice constant as that of ZnSe, and a ZnSe single crystal are used. The temperature of a GaAs single crystal substrate 1 is set between, e.g., 300 deg.C and 350 deg.C. Atomic and molecular beams of metal zinc and metal selenium, which are host crystal materials, and a molecular beam of zinc chloride as a doner source are simultaneously applied to the GaAs single crystal substrate 1 in a super high vacuum state. Thus a chlorine added n-type ZnSe layer 2 is formed. Then the ZnCl2 molecular beam is stopped in order to form a p-type ZnSe layer 3. Nitrogen molecule ions as an acceptor source and the atomic and molecular beams of the metal zinc and the metal selenium are simultaneously applied to the n-type ZnSe layer 2. Thus the nitrogen added p-type ZnSe layer 3 is formed by epitaxial growth. A gold electrode layer 4 is evaporated and annealed in order to obtain an electrode which has an ohmic contact with the p-type ZnSe layer 3.

Inventors

• 👤 Kazuhiro Okawa
• 👤 和宏 大川
• 👤 Tsuneo Mitsuyu
• 👤 常男 三露
• 👤 Osamu Yamazaki
• 👤 山崎　攻

Bibliographic Details