Light-emitting diode

Abstract

Abstract PURPOSE:To enable to generate superhigh output extending over from the infrared region to the visible region by a method wherein a semiconductor layer, where a hetero junction consisting of GaI-XAlXAs/GaI-X'AlX'As is constituted, is formed on an n type ZnSe substrate crystal. CONSTITUTION:A GaAlAs double hetero junction was paid attention as a p-n junction having little reabsorption effect due to a peripheral crystal among p-n junctions of a p type compound semiconductor and an n type compound semiconductor of the III-V Group, and moreover, a ZnSe crystal was selected as a crystal for substrate crystal having the least mixed crystal of GaAs and AlAs and having the least mismatching of lattice constant. For constitution the title element, an n type Ga0.7Al0.3As layer 12 is first laminated on an n type ZnSe single crystall 11, then a p type Ga0.9Al0.1As layer 13 and a p type Ga0.7Al0.3As layer 14 are successively laminated thereon. Moreover, the single crystal 11 is processed into a hemispheric form for light-taking out use.

Inventors

• 👤 Tatsuro Beppu
• 👤 達郎 別府
• 👤 Tetsuo Sadamasa
• 👤 定政　哲男
• 👤 Tadashi Komatsubara
• 👤 小松原　正

Bibliographic Details