Abstract This invention provides a plasma CVD method aimed at forming an amorphous silicon thin film on a large-area substrate at a high speed and also an apparatus therefor. The method and apparatus are characterized by a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes accommodated in the reaction vessel, a source for supplying power for glow discharge to the discharging electrodes, two pairs of solenoid coils arranged on opposite sides of said reaction vessel and so disposed that the axes thereof perpendicularly intersect each other as well as perpendicularly the electric field formed between the discharging electrodes, and an AC source for supplying power to said solenoid coils for magnetic field generation, whereby an amorphous silicon thin film is formed on a substrate held to intersect perpendicularly the electric field between the discharging electrodes.
A plasma CVD apparatus comprising a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging said reactant gas from said vessel, discharging electrodes disposed in the reaction vessel, and a source for supplying power for glow discharge to the discharging electrodes thereby forming an amorphous (noncrystalline) thin film on a surface of a substrate held within the reaction vessel, wherein said substrate surface perpendicularly intersects an electric field formed between the discharging electrodes, said apparatus further comprising two solenoid coils at least partially overlapping each other, each coil having an axis so disposed that said coil axes perpendicularly intersect each other and perpendicularly intersect the electric field between the discharging electrodes, and an AC source for supplying electric currents to the solenoid coils for magnetic field generation, said electric currents having a 90° phase difference, whereby a rotating resultant magnetic field is applied which rotates at a constant angular velocity.
Claim 2
Dependent Claim
155 words
A plasma CVD apparatus comprising a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging said reactant gas from said vessel, discharging electrodes disposed in the reaction vessel, and a source for supplying power for glow discharge to the discharging electrodes thereby forming an amorphous (noncrystalline) thin film on a surface of a substrate held within the reaction vessel, wherein said substrate surface perpendicularly intersects an electric field formed between the discharging electrodes, said apparatus further comprising two solenoid coils at least partially overlapping each other, each coil having an axis so disposed that said coil axes perpendicularly intersect each other and perpendicularly intersect the electric field between the discharging electrodes, and an AC source for supplying electric currents to the solenoid coils for magnetic field generation, said electric currents having a 90° phase difference, whereby a rotating resultant magnetic field is applied which rotates at a constant angular velocity.
Claim 3
Dependent Claim
34 words
A plasma CVD apparatus, as claimed in claim 1, wherein the intensity of said rotating resultant magnetic field in the center of said two solenoid coils is from about 40 to about 100 gauss.