Optoelectronic semiconductor laser device having compound semiconductor first and second layers

Assignee: Sony Corp

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Filing: 1994-04-07

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Granted: 1995-05-30

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Expires: 2014-04-07

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Abstract

Abstract When a ZnSe, ZnTe or ZnSSe or Zn 1-a Mg a S b Se 1-b (0<a<1, 0<b<1) layer provided on a Zn 1-x Mg x S y Se 1-y (0<x<1, 0<y<1, a<x) layer is selectively etched by a dry etching method such as an RIE method, the Zn 1-x Mg x S y Se 1-y layer is used as an etching stopping layer. Thus, selective etching of the ZnSe, ZnTe, ZnSSe or Zn 1-a Mg a S b Se 1-b layer can be conducted with excellent controllability and reproducibility.

Inventors

👤 Fumiyo Narui
👤 Masafumi Ozawa

Bibliographic Details

Application Number —

Jurisdiction US

Data Source google_patents

Last Synchronized 2026-11-08 02:32

CPC Classifications

H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10P; H10P50/00; H10P50/20; H10P52/00; H10P95/00; H10P95/70; H01S5/10; H01S5/12; H01S5/1231; H01S5/20; H01S5/2054; H01S5/2081; H01S5/209; H01S5/22; H01S5/223; H01S5/2231; Y; Y10; Y10S; Y10S438/00; Y10S438/97

Claims Analysis

Total Claims: 4

Claim 1

Independent Claim 83 words

An optoelectronic device comprising: a first layer made of a Zn 1-x Mg x S y Se 1-y (0<x<1, 0<y<1) compound semiconductor; at least one second layer provided on said first layer and made of a compound semiconductor selected from the group consisting of ZnSe, ZnTe, ZnSSe and Zn 1-a Mg a S b Se 1-b (0<a<1, 0<b<1, a<x); and said optoelectronic device comprising a semiconductor laser, said first layer being a carrier blocking layer and said second layer being a cladding layer.

Claim 2

Dependent Claim 83 words

Claim 3

Dependent Claim 89 words

An optoelectronic device comprising: a first layer made of a Zn 1-x Mg x S y Se 1-y (0<x<1, 0<y<1) compound semiconductor; at least one second layer provided on said first layer and made of a compound semiconductor selected from the group consisting of ZnSe, ZnTe, ZnSSe and Zn 1-a Mg a S b Se 1-b (0<a<1, 0<b<1, a<x): and said optoelectronic device comprising a distributed feedback semiconductor laser, said first layer being an optical waveguide layer and said second layer being a layer for forming a diffraction grating.

Claim 4

Dependent Claim 89 words

An optoelectronic device comprising: a first layer made of a Zn 1-x Mg x S y Se 1-y (0<x<1, 0<y<1) compound semiconductor; at least one second layer provided on said first layer and made of a compound semiconductor selected from the group consisting of ZnSe, ZnTe, ZnSSe and Zn 1-a Mg a S b Se 1-b (0<a<1, 0<b<1, a<x): and said optoelectronic device comprising a distributed feedback semiconductor laser, said first layer being an optical waveguide layer and said second layer being a layer for forming a diffraction grating.

References Cited (Backward Citations)

DE234955C Cited

JPS6338279A Cited

JPH03174504A Cited

JPH03257877A Cited

JPH05127832A Cited

JPH04363086A Cited

US5268918A Cited

US5291507A Cited

US5260958A Cited

US5324963A Cited

US5319219A Cited

JPH065920A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1998-05-29	1998-11-28	1999-05-30	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2002-05-29	2002-11-28	2003-05-30	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2006-05-29	2006-11-28	2007-05-30	$7700.00	Window Closed / Lapsed

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