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US5420101A
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Structures super conductor tracks and process for making them
Assignee: Forschungszentrum Jülich
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Filing: 1992-06-23
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Granted: 1995-05-30
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Expires: 2012-06-23
Abstract
Abstract The invention relates to a structured superconductive track and a process for making it from epitaxial high temperature superconductor (HTSC) layers using lift off technique, in which a HTSC track deposited on an elevated substrate region is surrounded by an insulating layer of doped HTSC lying on a lower substrate region, and the substrate region with the superconductive track formed thereon is elevated such that the superconductive track is isolated from the insulating layer.
Inventors
- 👤 Carlo Copetti
- 👤 Jurgen Schubert
- 👤 Willi Zander
- 👤 Christoph Buchal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:57
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H10W70/668; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4484; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/725; Y10S505/729
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
309 words
A process for the production of at least one superconductive track of a high temperature superconductor on a surface of a substrate suitable for epitaxial growth of the high temperature superconductor, said process comprising the steps of: (a) applying to the surface of the substrate suitable for epitaxial growth of the high temperature superconductor, a lacquer layer along a region intended for forming a superconductive track; (b) depositing upon said lacquer layer and regions of said surface adjacent said lacquer layer a sufficient thickness of a substrate material capable of sustaining growth of the high temperature superconductor to elevate the substrate material of said regions adjacent said lacquer layer above an intended level of the high temperature superconductor of the track; (c) vapor depositing upon said lacquer layer and said substrate material of said regions adjacent said lacquer layer an inhibit doping layer of a material diffusible into the high temperature superconductor to transform the high temperature superconductor into which the material of said inhibit doping layer diffuses into an insulator; (d) lifting off said lacquer layer with the inhibit doping layer thereon to expose said surface of said substrate along said region intended for forming said superconductive track; (e) effecting epitaxial growth upon said substrate material and said surface of said substrate along said region intended for forming said superconductive track exposed in step (d) of said high temperature superconductor to a thickness corresponding to said intended level of said track, whereby said epitaxial growth of the high temperature superconductor is effected in said region intended for forming said superconductive track exposed in step (d) shielded from the remaining inhibit doping layer at a higher level; and (f) effecting diffusion of said material of said inhibit doping layer into the overlying high temperature superconductor to transform the high temperature superconductor on said inhibit doping layer into an insulator.
Claim 2
Dependent Claim
309 words
A process for the production of at least one superconductive track of a high temperature superconductor on a surface of a substrate suitable for epitaxial growth of the high temperature superconductor, said process comprising the steps of: (a) applying to the surface of the substrate suitable for epitaxial growth of the high temperature superconductor, a lacquer layer along a region intended for forming a superconductive track; (b) depositing upon said lacquer layer and regions of said surface adjacent said lacquer layer a sufficient thickness of a substrate material capable of sustaining growth of the high temperature superconductor to elevate the substrate material of said regions adjacent said lacquer layer above an intended level of the high temperature superconductor of the track; (c) vapor depositing upon said lacquer layer and said substrate material of said regions adjacent said lacquer layer an inhibit doping layer of a material diffusible into the high temperature superconductor to transform the high temperature superconductor into which the material of said inhibit doping layer diffuses into an insulator; (d) lifting off said lacquer layer with the inhibit doping layer thereon to expose said surface of said substrate along said region intended for forming said superconductive track; (e) effecting epitaxial growth upon said substrate material and said surface of said substrate along said region intended for forming said superconductive track exposed in step (d) of said high temperature superconductor to a thickness corresponding to said intended level of said track, whereby said epitaxial growth of the high temperature superconductor is effected in said region intended for forming said superconductive track exposed in step (d) shielded from the remaining inhibit doping layer at a higher level; and (f) effecting diffusion of said material of said inhibit doping layer into the overlying high temperature superconductor to transform the high temperature superconductor on said inhibit doping layer into an insulator.
Claim 3
Dependent Claim
17 words
The process defined in claim 1 wherein the high temperature superconductor is YBa 2 Cu 3 oxide.
Claim 4
Dependent Claim
15 words
The process defined in claim 1 wherein said substrate material is deposited at room temperature.
Claim 5
Dependent Claim
24 words
The process defined in claim 1 wherein said substrate material is deposited at a temperature in the range of 500° C. to 850° C.
Claim 6
Dependent Claim
18 words
The process defined in claim 1 wherein said substrate material is of the same composition as said substrate.
Claim 7
Dependent Claim
13 words
The process defined in claim 1 wherein said lacquer layer is amorphous YBaCuO.
Claim 8
Dependent Claim
272 words
A process for the production of at least one superconductive track of a high temperature superconductor on a surface of a substrate suitable for epitaxial growth of the high temperature superconductor, said process comprising the steps of: (a) etching a surface of a substrate suitable for epitaxial growth of a high temperature superconductor to recess below a region intended for forming a superconductive track zones flanking said region to a depth such that inhibit doping layers on said zones will not affect a superconductive track grown on said region; (b) applying a lacquer layer to said region; (c) vapor depositing upon said lacquer layer and on said zones an inhibit doping layer of a material diffusible into the high temperature superconductor to transform the high temperature superconductor into which the material of said inhibit doping layer diffuses into an insulator; (d) lifting off said lacquer layer with the inhibit doping layer thereon to expose said surface of said substrate along said region intended for forming said superconductive track; (e) effecting epitaxial growth upon said inhibit doping layer on said zones and said surface of said substrate along said region intended for forming said superconductive track exposed in step (d) of said high temperature superconductor, whereby said epitaxial growth of the high temperature superconductor is effected in said region intended for forming said superconductive track exposed in step (d) shielded from the remaining inhibit doping layer at a lower level; and (f) effecting diffusion of said material of said inhibit doping layer into the overlying high temperature superconductor to transform the overlying high temperature superconductor on said inhibit doping layer into an insulator.
Claim 9
Dependent Claim
272 words
A process for the production of at least one superconductive track of a high temperature superconductor on a surface of a substrate suitable for epitaxial growth of the high temperature superconductor, said process comprising the steps of: (a) etching a surface of a substrate suitable for epitaxial growth of a high temperature superconductor to recess below a region intended for forming a superconductive track zones flanking said region to a depth such that inhibit doping layers on said zones will not affect a superconductive track grown on said region; (b) applying a lacquer layer to said region; (c) vapor depositing upon said lacquer layer and on said zones an inhibit doping layer of a material diffusible into the high temperature superconductor to transform the high temperature superconductor into which the material of said inhibit doping layer diffuses into an insulator; (d) lifting off said lacquer layer with the inhibit doping layer thereon to expose said surface of said substrate along said region intended for forming said superconductive track; (e) effecting epitaxial growth upon said inhibit doping layer on said zones and said surface of said substrate along said region intended for forming said superconductive track exposed in step (d) of said high temperature superconductor, whereby said epitaxial growth of the high temperature superconductor is effected in said region intended for forming said superconductive track exposed in step (d) shielded from the remaining inhibit doping layer at a lower level; and (f) effecting diffusion of said material of said inhibit doping layer into the overlying high temperature superconductor to transform the overlying high temperature superconductor on said inhibit doping layer into an insulator.
Claim 10
Dependent Claim
17 words
The process defined in claim 7 wherein the high temperature superconductor is YBa 2 Cu 3 oxide.
Claim 11
Dependent Claim
14 words
The process defined in claim 7 wherein the etching is effected by ion-beam etching.
Claim 12
Dependent Claim
75 words
A superconductive assembly consisting essentially of a superconductive track of an epitaxial high temperature superconductor (HTSC) layer applied to an elevated substrate region and surrounded by an insulating layer of doped HTSC lying on a lower substrate region, wherein the substrate constitutes a material suitable for epitaxial growth of the superconductive track, and the substrate region with the superconductive track formed thereon is elevated such that the superconductive track is isolated from the insulating layer.
Claim 13
Dependent Claim
75 words
A superconductive assembly consisting essentially of a superconductive track of an epitaxial high temperature superconductor (HTSC) layer applied to an elevated substrate region and surrounded by an insulating layer of doped HTSC lying on a lower substrate region, wherein the substrate constitutes a material suitable for epitaxial growth of the superconductive track, and the substrate region with the superconductive track formed thereon is elevated such that the superconductive track is isolated from the insulating layer.
Claim 14
Dependent Claim
27 words
The assembly according to claim 10 wherein the substrate constitutes a material selected from the group consisting of strontium titanate, lanthanum aluminate and yttrium stabilized zirconium oxide.
References Cited (Backward Citations)
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