US5096882A
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Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof
Assignee: Hitachi Ltd
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Filing: 1988-04-07
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Granted: 1992-03-17
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Expires: 2008-04-07
Abstract
Abstract A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa 2 Cu 3 O 7-x , thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.
Inventors
- 👤 Takahiko Kato
- 👤 Katsuzo Aihara
- 👤 Jiro Kuniya
- 👤 Yutaka Misawa
- 👤 Yoshihide Wadayama
- 👤 Masahiro Ogihara
- 👤 Toshikazu Nishino
- 👤 Ushio Kawabe
- 👤 Haruhiro Hasegawa
- 👤 Kazumasa Takagi
- 👤 Tokuumi Fukazawa
- 👤 Katsuki Miyauchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:45
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0661; H01; H01F; H01F41/00; H01F41/02; H01F41/04; H01F41/048; H01F6/00; H01F6/06; H10N60/0884; H10N60/0912; H10N60/0941; H10N60/20; H10N60/203; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
381 words
A process for manufacturing a device having a pattern of a superconductor, which comprises applying an oxygen ion beam to a predetermined region of a non-superconductive oxide having a desired shape while heating said non-superconductive oxide to an elevated temperature and for a period of time sufficient to recover crystal lattices which exhibit superconductivity of said non-superconductive oxide to control, said oxygen content to approximately the stoichiometric amount of said oxide during application of said oxygen ion beam only in said predetermined region, an amount of oxygen ions applied being sufficient to convert the non-superconductive oxide in said predetermined region to the pattern of superconductive oxide to obtain the device, said superconductive oxide being selected from the group consisting of a perovskite oxide having a structure of A 1 1-x A' x B 1 O 3 , wherein A 1 is Ba, Pb, La, Pr or Nd, A' is Ca, Ba, Sr or Pb, and B 1 is Cu, Mg, Mn, Fe, Co or Ni; a layer perovskite oxide having a structure of A 2 2 B 2 O 4 , wherein A 2 is a rare earth metal and B 2 is a transition metal, or a structure of A 3 2 (1-x)A" 2 xB 3 O 4 , wherein A 3 and A" are elements of group IIIB and Group IIA of the Periodic Table, and B 3 is a transition metal; an oxygen-deficient perovskite layer oxide having a structure of A 4 B.sup. 4 2 C 1 3 O 7 , wherein A 4 is Y or a lanthanoid of La, Nd, Dy, Sm, Eu, Gd, Ho, Er, Tm or Yb, B 4 is Ba, Sr, Ca or Sc, and C 1 is Cu; a multilayer perovskite oxide having a structure of A 5 2 (B 5 ,C 2 ) 3 D 2 O 8 , wherein A 5 is Bi or Tl, B 5 is Ba or Sr, C 2 is Ca, and D is Cu; and a spinel oxide having a structure of A 6 B 6 2 O 4 , wherein A 6 is Li and B 6 is Ti; and said non-superconductive oxide having a composition which can be converted so that of said superconductive oxide by the application of said oxygen ion beam.
Claim 2
Dependent Claim
381 words
A process for manufacturing a device having a pattern of a superconductor, which comprises applying an oxygen ion beam to a predetermined region of a non-superconductive oxide having a desired shape while heating said non-superconductive oxide to an elevated temperature and for a period of time sufficient to recover crystal lattices which exhibit superconductivity of said non-superconductive oxide to control, said oxygen content to approximately the stoichiometric amount of said oxide during application of said oxygen ion beam only in said predetermined region, an amount of oxygen ions applied being sufficient to convert the non-superconductive oxide in said predetermined region to the pattern of superconductive oxide to obtain the device, said superconductive oxide being selected from the group consisting of a perovskite oxide having a structure of A 1 1-x A' x B 1 O 3 , wherein A 1 is Ba, Pb, La, Pr or Nd, A' is Ca, Ba, Sr or Pb, and B 1 is Cu, Mg, Mn, Fe, Co or Ni; a layer perovskite oxide having a structure of A 2 2 B 2 O 4 , wherein A 2 is a rare earth metal and B 2 is a transition metal, or a structure of A 3 2 (1-x)A" 2 xB 3 O 4 , wherein A 3 and A" are elements of group IIIB and Group IIA of the Periodic Table, and B 3 is a transition metal; an oxygen-deficient perovskite layer oxide having a structure of A 4 B.sup. 4 2 C 1 3 O 7 , wherein A 4 is Y or a lanthanoid of La, Nd, Dy, Sm, Eu, Gd, Ho, Er, Tm or Yb, B 4 is Ba, Sr, Ca or Sc, and C 1 is Cu; a multilayer perovskite oxide having a structure of A 5 2 (B 5 ,C 2 ) 3 D 2 O 8 , wherein A 5 is Bi or Tl, B 5 is Ba or Sr, C 2 is Ca, and D is Cu; and a spinel oxide having a structure of A 6 B 6 2 O 4 , wherein A 6 is Li and B 6 is Ti; and said non-superconductive oxide having a composition which can be converted so that of said superconductive oxide by the application of said oxygen ion beam.
Claim 3
Dependent Claim
29 words
A process according to claim 1, wherein said perovskite oxide is (La 1 -x S r x )CoO 3 or (La 1 -x S r x )CrO 3 .
Claim 4
Dependent Claim
67 words
A process according to claim 1, wherein said layer perovskite oxide is La 2 CuO 4 , La 2 NiO 4 , (La 1-x Sr x ) 2 CuO 4 , (La 1-x Ba x ) 2 CuO 4 , (Y 1-x Ba x ) 2 CuO 4 , (Y 1-x Sr x ) 2 CuO 4 or (Sc 1-x Sr x ) 2 CuO 4 .
Claim 5
Dependent Claim
91 words
A process according to claim 1, wherein said oxygen-deficient perovskite layer oxide is YBa 2 Cu 3-x Ni x O 7 or LnBa 2 Cu 3 O 7 , wherein Ln is the same lanthanoid as defined for A 4 , YSr 2 Cu 3 O 7 , YBa 2 Cu 3-x NixO 7 , YBa 2 Cu 3-x Ag x O 7 , YBaCaCu 3 O 7 , Y 0 .75 Sc 0 .25 Ba 2 Cu 3 O 7 or YBa 2 Cu 3 F 2 O 5 .
Claim 6
Dependent Claim
34 words
A process according to claim 1, wherein said multilayer perovskite oxide is Bi 4 Sr 3 Ca 3 Cu 4 O 16 or Tl 4 Ba 2 Ca 2 Cu 4 O 16 .
Claim 7
Dependent Claim
16 words
A process according to claim 1, wherein said spinel oxide is LiTi 2 O 4 .
Claim 8
Dependent Claim
31 words
A process according to claim 1, further comprising heat treating said superconductive oxide to a temperature capable of recovering crystal lattices of said superconductive oxide after application of said oxygen beam.
Claim 9
Dependent Claim
29 words
A process according to claim 1, wherein said device is any of a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element.
Claim 10
Dependent Claim
14 words
A process according to claim 8, wherein said element includes superconductive circuits or wirings.
Claim 11
Dependent Claim
32 words
A process according to claim 1, further comprising heat treating said superconductive oxide to a temperature capable of recovering crystal lattices of said superconductive oxide after application of said oxygen ion beam.
Claim 12
Dependent Claim
20 words
A process according to claim 1, wherein said predetermined region of non-superconductive oxide is provided on an electrically insulative substrate.
Claim 13
Dependent Claim
400 words
A process for manufacturing a device having a pattern of a superconductor, which comprises applying an energy beam selected from an electron beam, a neutron beam, a laser beam and an infrared ray beam to a predetermined region of a non-superconductive oxide having a desired shape while heating said non-superconductive oxide to an elevated temperature and for a period of time sufficient to recover crystal lattices which exhibit superconductivity of said non-superconductive oxide in an atmosphere containing oxygen gas to control said oxygen content to approximately the stoichiometric amount of said oxide during application of said energy beam only in said predetermined region, said energy beam having an energy sufficient to convert the non-superconductive oxide in said predetermined region to the pattern of superconductive oxide to obtain the device, said superconductive oxide being selected from the group consisting of a perovskite oxide having a structure of A 1 1-x A' x B 1 O 3 , wherein A 1 is Ba, Pb, La, Pr or Nd, A' is Ca, Ba, Sr or Pb, and B 1 is Cu, Mg, Mn, Fe, Co or Ni; a layer perovskite oxide having a structure of A.sup. 2 2 B 2 O 4 , wherein A 2 is a rare earth metal and B 2 is a transition metal, or a structure of A 3 2 (1-x) A" 2x B 3 O 4 , wherein A 3 and A" are elements of Group IIIB and Group IIA of the Periodic Table, and B 3 is a transition metal; and oxygen-deficient peroviskite layer oxide having a structure of A 4 B 4 2 C 1 3 O 7 , wherein A 4 is Y or a lanthanoid of La, Nd, Dy, Sm, Eu, Gd, Ho, Er, Tm or Yb, B 4 is Ba, Sr, Ca or Sc, and C 1 is Cu; a multilayer perovskite oxide having a structure of A 5 2 (B 5 ,C 2 ) 3 D 2 O 8 , wherein A 5 is Bi or Tl, B 5 is Ba or Sr, C 2 is Ca, and D is Cu; and a spinel oxide having a structure of A 6 B 6 2 O 4 , wherein A 6 is Li and B 6 is Ti; and said non-superconductive oxide having a composition which can be converted to that of said superconductive oxide by the application of said energy beam.
Claim 14
Dependent Claim
400 words
A process for manufacturing a device having a pattern of a superconductor, which comprises applying an energy beam selected from an electron beam, a neutron beam, a laser beam and an infrared ray beam to a predetermined region of a non-superconductive oxide having a desired shape while heating said non-superconductive oxide to an elevated temperature and for a period of time sufficient to recover crystal lattices which exhibit superconductivity of said non-superconductive oxide in an atmosphere containing oxygen gas to control said oxygen content to approximately the stoichiometric amount of said oxide during application of said energy beam only in said predetermined region, said energy beam having an energy sufficient to convert the non-superconductive oxide in said predetermined region to the pattern of superconductive oxide to obtain the device, said superconductive oxide being selected from the group consisting of a perovskite oxide having a structure of A 1 1-x A' x B 1 O 3 , wherein A 1 is Ba, Pb, La, Pr or Nd, A' is Ca, Ba, Sr or Pb, and B 1 is Cu, Mg, Mn, Fe, Co or Ni; a layer perovskite oxide having a structure of A.sup. 2 2 B 2 O 4 , wherein A 2 is a rare earth metal and B 2 is a transition metal, or a structure of A 3 2 (1-x) A" 2x B 3 O 4 , wherein A 3 and A" are elements of Group IIIB and Group IIA of the Periodic Table, and B 3 is a transition metal; and oxygen-deficient peroviskite layer oxide having a structure of A 4 B 4 2 C 1 3 O 7 , wherein A 4 is Y or a lanthanoid of La, Nd, Dy, Sm, Eu, Gd, Ho, Er, Tm or Yb, B 4 is Ba, Sr, Ca or Sc, and C 1 is Cu; a multilayer perovskite oxide having a structure of A 5 2 (B 5 ,C 2 ) 3 D 2 O 8 , wherein A 5 is Bi or Tl, B 5 is Ba or Sr, C 2 is Ca, and D is Cu; and a spinel oxide having a structure of A 6 B 6 2 O 4 , wherein A 6 is Li and B 6 is Ti; and said non-superconductive oxide having a composition which can be converted to that of said superconductive oxide by the application of said energy beam.
Claim 15
Dependent Claim
32 words
A process according to claim 12, wherein said perovskite oxide is (La 1-x Sr x )CoO 3 , (La 1-x Sr x )CrO 3 or (La 1-x Sr x )CrO 3 .
Claim 16
Dependent Claim
67 words
A process according to claim 12, wherein said layer perovskite oxide is La 2 CuO 4 , La 1-x NiO 4 , (La 1-x Sr x ) 2 CuO 4 , (La 1-x Ba x ) 2 CuO 4 , (Y 1-x Ba x ) 2 CuO 4 , (Y 1-x Sr x ) 2 CuO 4 or (Sc 1-x Sr x ) 2 CuO 4 .
Claim 17
Dependent Claim
96 words
A process according to claim 12, wherein said oxygen-deficient perovskite layer oxide is YBa 2 Cu 3x Ni x O 7 or LnBa 2 C u 3 O 7 , wherein Ln is the same lanthanoid as defined for A 4 , YSr 2 C u 3 O 7 , YBa 2 Cu 3-x Ni x O 7 , YBa 2 C u 3 -x A g x O 7-x , YBaCaCu 3 O, Y 0 .75 Sc 0 .25 Ba 2 Cu 3 O 7 or YBa 2 Cu 3 F 2 O 5 .
Claim 18
Dependent Claim
41 words
A process according to claim 12, wherein said multilayer perovskite oxide is Bi 4 S r 3 C a 3 C u 4 O 1 6 or Tl 4 B a 2 C a 2 C u 4 O 1 6.
Claim 19
Dependent Claim
16 words
A process according to claim 12, wherein said spinel oxide is LiTi 2 O 4 .
Claim 20
Dependent Claim
31 words
A process according to claim 12, further comprising heat treating said superconductive oxide to a temperature capable of recovering crystal lattices of said superconductive oxide after application of said energy beam.
Claim 21
Dependent Claim
18 words
A process according to claim 12, wherein said heating is accomplished by heat produced by said energy beam.
Claim 22
Dependent Claim
20 words
A process according to claim 12, wherein said heating is accomplished by applying additional heat other than said energy beam.
Claim 23
Dependent Claim
29 words
A process according to claim 12, wherein said device is any of a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element.
Claim 24
Dependent Claim
14 words
A process according to claim 21, wherein said element includes superconductive circuits or wirings.
Claim 25
Dependent Claim
31 words
A process according to claim 12, further comprising heat treating said superconductive oxide to a temperature capable of recovering crystal lattices of said superconductive oxide after application of said energy beam.
Claim 26
Dependent Claim
18 words
A process according to claim 12, wherein said heating is accomplished by heat produced by said energy beam.
Claim 27
Dependent Claim
20 words
A process according to claim 12, wherein said heating is accomplished by applying additional heat other than said energy beam.
Claim 28
Dependent Claim
20 words
A process according to claim 12, wherein said predetermined region of non-superconductive oxide is provided on an electrically insulative substrate.
Claim 29
Dependent Claim
379 words
A process for manufacturing a device having a pattern of superconductor, which comprises applying a beam of ions having an energy that is necessary for displacement of oxygen to reduce the oxygen content of shaped superconductive oxide at sites of oxygen in a crystal lattice of said oxide at selected regions of said superconductive oxide, said ions being one selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, silicon, nitrogen, aluminum, magnesium, vanadium+oxygen, silicon+oxygen, silicon+nitrogen, magnesium+oxygen, and aluminum+oxygen, or applying a beam of hydrogen ions to reduce the oxygen content of said oxide at selected regions of said superconductive oxide, thereby converting the superconductive oxide to the non-superconductive oxide only at said selected regions, said selected regions being outside said pattern of superconductor, to obtain the deice, said superconductive oxide being selected from the group consisting of a perovskite oxide having a structure of A 1 1-x A' x B 1 O 3 , wherein A 1 is Ba, Pb, La, Pr or Nd, A' is Ca, Ba, Sr or Pb, and B 1 is Cu, Mg, Mn, Fe, Co or Ni; a layer perovskite oxide having a structure of A 2 2 B 2 O 4 , wherein A 2 is a rare earth metal and B 2 is a transitional metal, or a structure of A 3 2 (1-x) A" 2x B 3 O 4 , wherein A 3 and A" are elements of Group IIIB and Group IIA of the Periodic Table, and B 3 is a transition metal; and oxygen-deficient perovskite layer oxide having a structure of A 4 B 4 2 C 1 3 O 7 , wherein A 4 is Y or a lanthanoid of La, Nd, Dy, Sm, Eu, Gd, Ho, Er, Tm or Yb, B 4 is Ba, Sr, Ca or Sc, and C 1 is Cu; a multilayer perovskite oxide having a structure of A 5 2 (B 5 ,C 2 ) 3 D 2 O 8 , wherein A 5 is Bi or Tl, B 5 is Ba or Sr, C 2 is Ca, and D is Cu; and a spinel oxide having a structure of A 6 B 6 2 O 4 , wherein A 6 is Li and B 6 is Ti.
Claim 30
Dependent Claim
379 words
A process for manufacturing a device having a pattern of superconductor, which comprises applying a beam of ions having an energy that is necessary for displacement of oxygen to reduce the oxygen content of shaped superconductive oxide at sites of oxygen in a crystal lattice of said oxide at selected regions of said superconductive oxide, said ions being one selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, silicon, nitrogen, aluminum, magnesium, vanadium+oxygen, silicon+oxygen, silicon+nitrogen, magnesium+oxygen, and aluminum+oxygen, or applying a beam of hydrogen ions to reduce the oxygen content of said oxide at selected regions of said superconductive oxide, thereby converting the superconductive oxide to the non-superconductive oxide only at said selected regions, said selected regions being outside said pattern of superconductor, to obtain the deice, said superconductive oxide being selected from the group consisting of a perovskite oxide having a structure of A 1 1-x A' x B 1 O 3 , wherein A 1 is Ba, Pb, La, Pr or Nd, A' is Ca, Ba, Sr or Pb, and B 1 is Cu, Mg, Mn, Fe, Co or Ni; a layer perovskite oxide having a structure of A 2 2 B 2 O 4 , wherein A 2 is a rare earth metal and B 2 is a transitional metal, or a structure of A 3 2 (1-x) A" 2x B 3 O 4 , wherein A 3 and A" are elements of Group IIIB and Group IIA of the Periodic Table, and B 3 is a transition metal; and oxygen-deficient perovskite layer oxide having a structure of A 4 B 4 2 C 1 3 O 7 , wherein A 4 is Y or a lanthanoid of La, Nd, Dy, Sm, Eu, Gd, Ho, Er, Tm or Yb, B 4 is Ba, Sr, Ca or Sc, and C 1 is Cu; a multilayer perovskite oxide having a structure of A 5 2 (B 5 ,C 2 ) 3 D 2 O 8 , wherein A 5 is Bi or Tl, B 5 is Ba or Sr, C 2 is Ca, and D is Cu; and a spinel oxide having a structure of A 6 B 6 2 O 4 , wherein A 6 is Li and B 6 is Ti.
Claim 31
Dependent Claim
32 words
A process according to claim 27, wherein said perovskite oxide is (La 1-x Sr x )CoO 3 , (La 1-x Sr x )CrO 3 or (La 1-x Sr x )CrO 3- δ.
Claim 32
Dependent Claim
67 words
A process according to claim 27, wherein said layer perovskite oxide is La 2 CuO 4 , La 2 NiO 4 , (La 1-x Sr x ) 2 CuO 4 , (La 1-x Ba x ) 2 CuO 4 , (Y 10x Ba x ) 2 CuO 4 , (Y 1-x Sr x ) 2 CuO 4 or (Sc 1-x Sr x ) 2 CuO 4 .
Claim 33
Dependent Claim
95 words
A process according to claim 27, wherein said oxygen-deficient perovskite layer oxide is YBa 2 Cu 3-x Ni x O 7 or LnBa 2 Cu 3 O 7 , wherein Ln is the same lanthanoid as defined for A 4 , YSr 2 Cu 3 O 7 , YBa 2 Cu 3-x N i x O 7 , YBa 2 Cu 3-x A g x O 7 , YBaCaCu 3 O 7 , Y 0 .75 Sc 0 .25 Ba 2 Cu 3 O 7 or YBa 2 Cu 3 F 2 O 5 .
Claim 34
Dependent Claim
34 words
A process according to claim 27, wherein said multilayer perovskite oxide is Bi 4 Sr 3 Ca 3 Cu 4 O 16 or Tl 4 Ba 2 Ca 2 Cu 4 O 16 .
Claim 35
Dependent Claim
16 words
A process according to claim 27, wherein said spinel oxide is LiTi 2 O 4 .
Claim 36
Dependent Claim
29 words
A process according to claim 27, wherein said device is any of a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element.
Claim 37
Dependent Claim
14 words
A process according to claim 33, wherein said element includes superconductive circuits or wirings.
Claim 38
Dependent Claim
21 words
A process according to claim 27, wherein said selected regions of said superconductive oxide are provided on an electrically insulative substrate.
Claim 39
Dependent Claim
46 words
A process for manufacturing a superconductive oxide having a high critical current density in a magnetic field, which comprises applying a particle beam to the superconductive oxide in an amount sufficient to increase a critical current density of the superconductive oxide by forming radiation defects therein.
Claim 40
Dependent Claim
46 words
A process for manufacturing a superconductive oxide having a high critical current density in a magnetic field, which comprises applying a particle beam to the superconductive oxide in an amount sufficient to increase a critical current density of the superconductive oxide by forming radiation defects therein.
Claim 41
Dependent Claim
17 words
A process according to claim 36, wherein said superconductive oxide is provided on an electrically insulative substrate.
Claim 42
Dependent Claim
128 words
A process for manufacturing a superconductive device from a non-superconductive oxide formed in a desired shape of the device, which comprises applying an oxygen ion beam to a predetermined region of said non-superconductive oxide while heating said non-superconductive oxide to an elevated temperature and for a period of time sufficient to recover crystal lattices which exhibit superconductivity of said non-superconductive oxide to control said oxygen content to approximately the stoichiometric amount of said oxide only in said predetermined region, an amount of oxygen ions applied being sufficient to convert the non-superconductive oxide to the superconductive oxide in said predetermined region to obtain the device; said non-superconductive oxide having a composition which can be converted to that of said superconductive oxide by the application of said oxygen ion beam.
Claim 43
Dependent Claim
128 words
A process for manufacturing a superconductive device from a non-superconductive oxide formed in a desired shape of the device, which comprises applying an oxygen ion beam to a predetermined region of said non-superconductive oxide while heating said non-superconductive oxide to an elevated temperature and for a period of time sufficient to recover crystal lattices which exhibit superconductivity of said non-superconductive oxide to control said oxygen content to approximately the stoichiometric amount of said oxide only in said predetermined region, an amount of oxygen ions applied being sufficient to convert the non-superconductive oxide to the superconductive oxide in said predetermined region to obtain the device; said non-superconductive oxide having a composition which can be converted to that of said superconductive oxide by the application of said oxygen ion beam.
Claim 44
Dependent Claim
17 words
A process according to claim 38, wherein said non-superconductive oxide is provided on an electrically insulative substrate.
Claim 45
Dependent Claim
144 words
A process for manufacturing a device having a pattern of a superconductor, which comprises applying an energy beam selected from an electron beam, a neutron beam, a laser beam and an infrared ray beam to a predetermined region of a non-superconductive oxide having a desired shape while heating said non-superconductive oxide to an elevated temperature and for a period of time sufficient to recover crystal lattices which exhibit superconductivity of said non-superconductive oxide in an atmosphere containing oxygen gas to control said oxygen content to approximately the stoichiometric amount of said oxide only in said predetermined region, said energy beam having an energy sufficient to convert the non-superconductive oxide in said predetermined region to the superconductive oxide to obtain the device, said non-superconductive oxide having a composition which can be converted to that of said superconductive oxide by the application of said energy beam.
Claim 46
Dependent Claim
144 words
A process for manufacturing a device having a pattern of a superconductor, which comprises applying an energy beam selected from an electron beam, a neutron beam, a laser beam and an infrared ray beam to a predetermined region of a non-superconductive oxide having a desired shape while heating said non-superconductive oxide to an elevated temperature and for a period of time sufficient to recover crystal lattices which exhibit superconductivity of said non-superconductive oxide in an atmosphere containing oxygen gas to control said oxygen content to approximately the stoichiometric amount of said oxide only in said predetermined region, said energy beam having an energy sufficient to convert the non-superconductive oxide in said predetermined region to the superconductive oxide to obtain the device, said non-superconductive oxide having a composition which can be converted to that of said superconductive oxide by the application of said energy beam.
Claim 47
Dependent Claim
21 words
A process according to claim 40, wherein said non-superconductive oxide having a desired shape is provided on an electrically insulative substrate.
Claim 48
Dependent Claim
132 words
A process for manufacturing a device having a pattern of superconductor, which comprises applying a beam of ions having an energy that is necessary for displacement of oxygen to reduce the oxygen content of shaped superconductive oxide at sites of oxygen in a crystal lattice of said oxide at selected regions of said superconductive oxide, said ions being one selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, silicon, nitrogen, aluminum, magnesium, vanadium+oxygen, silicon+oxygen, silicon+nitrogen, magnesium+oxygen, and aluminum+oxygen, or applying a beam of hydrogen ions to reduce the oxygen content of said oxide at selected regions of said superconductive oxide, thereby converting the superconductive oxide to the non-superconductive oxide only at said selected regions, said selected regions being outside said pattern of superconductor, to obtain the device.
Claim 49
Dependent Claim
132 words
A process for manufacturing a device having a pattern of superconductor, which comprises applying a beam of ions having an energy that is necessary for displacement of oxygen to reduce the oxygen content of shaped superconductive oxide at sites of oxygen in a crystal lattice of said oxide at selected regions of said superconductive oxide, said ions being one selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zinc, silicon, nitrogen, aluminum, magnesium, vanadium+oxygen, silicon+oxygen, silicon+nitrogen, magnesium+oxygen, and aluminum+oxygen, or applying a beam of hydrogen ions to reduce the oxygen content of said oxide at selected regions of said superconductive oxide, thereby converting the superconductive oxide to the non-superconductive oxide only at said selected regions, said selected regions being outside said pattern of superconductor, to obtain the device.
Claim 50
Dependent Claim
21 words
A process according to claim 42, wherein said selected regions of said superconductive oxide are provided on an electrically insulative substrate.
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