Abstract In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, an active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.
A method for producing a semiconductor laser device having a striped ridge extending in a resonator length direction comprising: successive growing on a semiconductor substrate at least a first conductivity type lower cladding layer, an active layer, a second conductivity type first upper cladding layer comprising Al x Ga 1-x As where x is 0.38 to 0.6, an etching stopper layer comprising Al y Ga 1-y As where y is more than 0.6, and a second conductivity type second upper cladding layer comprising Al z Ga 1-z As where z is 0.38 to 0.6; and etching portions of said second upper cladding layer with an etchant including an organic acid and hydrogen peroxide to form a ridge.
Claim 2
Independent Claim
117 words
A method for producing a semiconductor laser device having a striped ridge extending in a resonator length direction comprising: successive growing on a semiconductor substrate at least a first conductivity type lower cladding layer, an active layer, a second conductivity type first upper cladding layer comprising Al x Ga 1-x As where x is 0.38 to 0.6, an etching stopper layer comprising Al y Ga 1-y As where y is more than 0.6, and a second conductivity type second upper cladding layer comprising Al z Ga 1-z As where z is 0.38 to 0.6; and etching portions of said second upper cladding layer with an etchant including an organic acid and hydrogen peroxide to form a ridge.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said organic acid is tartaric acid.
Claim 4
Dependent Claim
27 words
The method of claim 1 further comprising, after forming said ridge, growing a first conductivity type semiconductor layer at both sides of said ridge, burying said ridge.
Claim 5
Dependent Claim
33 words
The method of claim 3 further comprising, after producing said ridge, removing said etching stopper layer with an etchant including sulfuric acid and hydrogen peroxide before growing said first conductivity type semiconductor layer.
Claim 6
Dependent Claim
17 words
The method of claim 2 wherein said substrate comprises GaAs and x and z are the same.