US5175740A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser and method of fabricating same
Assignee: Verizon Laboratories Inc
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Filing: 1991-07-24
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Granted: 1992-12-29
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Expires: 2011-07-24
Abstract
Abstract A ridge-waveguide laser is fabricated by epitaxially growing a GaAs-based heterostructure, disposing an AlAs etch stop layer on the heterostructure, disposing epitaxial layers on the etch stop layer, and etching the heterostructure to form the laser whereby the etch stop layer prevents further etching into said heterostructure.
Inventors
- 👤 Boris S. Elman
- 👤 Wayne F. Sharfin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:45
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/2054; H01S5/2081; H01S5/209; H01S5/30; H01S5/32; H01S5/323; H01S5/32308
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
57 words
A method of fabricating a mesa structure including a ridge-waveguide laser, comprising the steps of: epitaxially growing a heterostructure; disposing an AlAs etch stop layer on said heterostructure; disposing epitaxial layers on said etch stop layer; and etching said epitaxial layers to form said mesa structure whereby said etch stop layer prevents further etching into said heterostructure.
Claim 2
Independent Claim
57 words
A method of fabricating a mesa structure including a ridge-waveguide laser, comprising the steps of: epitaxially growing a heterostructure; disposing an AlAs etch stop layer on said heterostructure; disposing epitaxial layers on said etch stop layer; and etching said epitaxial layers to form said mesa structure whereby said etch stop layer prevents further etching into said heterostructure.
Claim 3
Dependent Claim
54 words
The method as recited in claim 1 wherein said laser includes: a GaAs substrate; an AlGaAs lower cladding layer; a GaAs/InGaAs/GaAs quantum well active region; a first AlGaAs upper cladding layer interposed between said active region and said etch stop layer; and a second AlGaAs upper cladding layer disposed on said etch stop layer.
Claim 4
Dependent Claim
29 words
A heterostructure for fabricating a laser, comprising: an epitaxially-grown heterostructure; an AlAs etch stop layer disposed on said epitaxially-grown heterostructure; and epitaxial layers disposed on said etch stop layer.
Claim 5
Dependent Claim
29 words
A heterostructure for fabricating a laser, comprising: an epitaxially-grown heterostructure; an AlAs etch stop layer disposed on said epitaxially-grown heterostructure; and epitaxial layers disposed on said etch stop layer.
Claim 6
Dependent Claim
47 words
The heterostructure as recited in claim 3 wherein said epitaxially-grown heterostructure includes: a GaAs substrate; an AlGaAs lower cladding layer disposed on said substrate; a GaAs/InGaAs/GaAs quantum well active region disposed on said lower cladding layer; and an AlGaAs upper cladding layer disposed on said active region.
Claim 7
Dependent Claim
13 words
The heterostructure as recited in claim 4 wherein said epitaxial layers are AlGaAs.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-29 | 1996-06-29 | 1996-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-29 | 2000-06-29 | 2000-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-29 | 2004-06-29 | 2004-12-29 | $7700.00 | Window Closed / Lapsed |