Semiconductor laser device and manufacture thereof

Abstract

Abstract PURPOSE:To obtain the desired stripe width and (h), to secure the surface condition after regrowth and crystallizability, and to contrive prevention of diffusion of N-type impurities by a method wherein a specific P-InGaAlP layer is provided in the middle of a specific n-InGaAlP clad layer as an etching stopper and a diffusion blocking layer. CONSTITUTION:After an n-GaAs buffer layer 2, an n-InGaP buffer layer 3, a specific n-InGaAlP clad layer 4, and an InGaP active layer 5 have been grown on an n-GaAs semiconductor substrate 1, the first InGaAlP clad layer 13 is grown in the desired value, namely, in the amount of (h), then a specific P- InGaAlP layer 14 is grown as an etching stopper and a diffusion-blocking layer, then the second P-InGaAlP clad layer 15 and a P-GaAs ohmic contact layer 7 are formed successively. Subsequently, the ohmic contact layer 7 is etched using SiO2 8 as a mask, and a stripe-like mesa is formed. Then, the etching reaching the P-InGaAlP layer 14 is conducted using hot sulfuric acid, and a stripe-like mesa is formed. As a result, the desired (h) can be obtained.

Inventors

• 👤 Yukio Watanabe
• 👤 幸雄 渡辺
• 👤 Masayuki Ishikawa
• 👤 正行 石川
• 👤 Kazuhiko Itaya
• 👤 和彦 板谷

Bibliographic Details