Patent US5420056A successfully refreshed from Google Patents.
US5420056A
Expired / Lapsed
US
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Junction contact process and structure for semiconductor technologies
Assignee: Texas Instruments Inc
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Filing: 1994-01-14
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Granted: 1995-05-30
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Expires: 2014-01-14
Abstract
Abstract A device and method for forming an improved junction contact in a semiconductor device (10). A portion of an interlevel dielectric layer (28) is etched away to expose a surface of at least one junction region (26). Next, a dielectric layer is formed over the exposed surface of the junction regions (26). The semiconductor device (10) is then annealed in a nitrogen-containing ambient to diffuse a portion (34) of the at least one junction region (26) further into a substrate (12). The dielectric layer may then be removed and contact plugs (36) formed in the exposed area. Finally, a metal interconnect layer (38) may be formed to connect to the junction regions (26) through the contact plugs (36).
Inventors
- 👤 Mehrdad M. Moslehi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 04:35
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10P; H10P14/00; H10P14/40; H10P14/42; Y; Y10; Y10S; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
83 words
A method for forming an improved junction contact in a semiconductor device, comprising the steps of: a. etching at least one contact hole through an interlevel dielectric layer to expose a portion of at least one junction region; b. forming a dielectric layer over said portion of said at least one junction region; and c. annealing said semiconductor device in a nitrogen-containing ambient to diffuse said portion of said at least one junction region with said overlying dielectric layer further into a substrate.
Claim 2
Independent Claim
83 words
A method for forming an improved junction contact in a semiconductor device, comprising the steps of: a. etching at least one contact hole through an interlevel dielectric layer to expose a portion of at least one junction region; b. forming a dielectric layer over said portion of said at least one junction region; and c. annealing said semiconductor device in a nitrogen-containing ambient to diffuse said portion of said at least one junction region with said overlying dielectric layer further into a substrate.
Claim 3
Dependent Claim
11 words
The method of claim 1, wherein said nitrogen-containing ambient comprises ammonia.
Claim 4
Dependent Claim
18 words
The method of claim 1, wherein said annealing step is performed at a temperature less than 850° C.
Claim 5
Dependent Claim
24 words
The method of claim 1, wherein said annealing step is performed at a pressure in the range of below atmospheric pressure to 100 atmospheres.
Claim 6
Dependent Claim
22 words
The method of claim 1, wherein said annealing step is performed at a pressure in the range of 20 to 100 atmospheres.
Claim 7
Dependent Claim
17 words
The method of claim 1, wherein said dielectric layer has a thickness in the range of 50Å-1000Å.
Claim 8
Dependent Claim
17 words
The method of claim 1, wherein said dielectric layer has a thickness in the range of 100-Å200Å.
Claim 9
Dependent Claim
17 words
The method of claim 1, wherein said step of forming said dielectric layer comprises low-pressure chemical-vapor deposition.
Claim 10
Dependent Claim
24 words
The method of claim 1, wherein said step of forming said dielectric layer comprises thermally growing said dielectric layer using a thermal oxidation process.
Claim 11
Dependent Claim
51 words
The method of claim 1 further comprising the steps of: a. removing said dielectric layer; b. forming a contact plug in said at least one contact hole; and c. forming a metal interconnect layer, wherein said contact plug electrically connects said at least one junction region to said metal interconnect layer.
Claim 12
Dependent Claim
19 words
The method of claim 1, wherein said at least one junction region comprises a plurality of source/drain junction regions.
Claim 13
Dependent Claim
14 words
The method of claim 1, wherein said dielectric layer is a silicon dioxide layer.
Claim 14
Independent Claim
145 words
A method of forming a semiconductor device, comprising the steps of: a. forming a plurality of transistors at the surface of a semiconductor body, each of said transistors having a source region, a drain region, and a gate; b. forming an interlevel dielectric layer over said plurality of transistors and said semiconductor body; c. etching a plurality of contact holes through said interlevel dielectric layer over said source and drain regions; d. forming a dielectric layer in said contact holes over said source and drain regions; e. annealing said semiconductor device in a nitrogen-containing atmosphere to extend a portion of each of said source and drain regions with said overlying dielectirc layer further into said semiconductor body; f. removing said dielectric layer; g. filling said contact holes with conductive plugs; and h. forming an interconnect layer adjacent said interlevel dielectric layer and said conductive plugs.
Claim 15
Independent Claim
145 words
A method of forming a semiconductor device, comprising the steps of: a. forming a plurality of transistors at the surface of a semiconductor body, each of said transistors having a source region, a drain region, and a gate; b. forming an interlevel dielectric layer over said plurality of transistors and said semiconductor body; c. etching a plurality of contact holes through said interlevel dielectric layer over said source and drain regions; d. forming a dielectric layer in said contact holes over said source and drain regions; e. annealing said semiconductor device in a nitrogen-containing atmosphere to extend a portion of each of said source and drain regions with said overlying dielectirc layer further into said semiconductor body; f. removing said dielectric layer; g. filling said contact holes with conductive plugs; and h. forming an interconnect layer adjacent said interlevel dielectric layer and said conductive plugs.
Claim 16
Dependent Claim
11 words
The method of claim 13, wherein said nitrogen-containing ambient comprises ammonia.
Claim 17
Dependent Claim
32 words
The method of claim 13, wherein said annealing step is performed at a temperature less than 850° C. and at a pressure in the range of below atmospheric pressure to 100 atmospheres.
Claim 18
Dependent Claim
22 words
The method of claim 13, wherein said annealing step is performed at a pressure in the range of 20 to 100 atmospheres.
Claim 19
Dependent Claim
17 words
The method of claim 13, wherein said dielectric layer has a thickness in the range of 100Å-200Å.
Claim 20
Dependent Claim
17 words
The method of claim 13, wherein said step of forming said dielectric layer comprises low-pressure chemical-vapor deposition.
Claim 21
Dependent Claim
19 words
The method of claim 13, wherein said step of forming said dielectric layer comprises thermally growing said dielectric layer.
Claim 22
Dependent Claim
26 words
The method of claim 1, wherein said annealing step diffuses said portion of said at least one junction further into the substrate in a self-aligned manner.
Claim 23
Dependent Claim
28 words
The method of claim 13, wherein said annealing step diffuses said portion of each of said source and drain regions further into the substrate in a selfaligned manner.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-29 | 1998-11-28 | 1999-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-29 | 2002-11-28 | 2003-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-29 | 2006-11-28 | 2007-05-30 | $7700.00 | Window Closed / Lapsed |