Patent US5414244A successfully refreshed from Google Patents.
US5414244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor wafer heat treatment apparatus
Assignee: Tokyo Electron Ltd
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Filing: 1994-04-21
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Granted: 1995-05-09
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Expires: 2014-04-21
Abstract
Abstract A heat treatment apparatus according to the present invention includes a process tube which heat rays are able to penetrate, a holding member for holding an object to be treated in the process tube, two temperature regulation plates arranged opposite and close to the object held by the holding member, for regulating an amount of heat rays reaching to the object, a heating unit for heating the object in the process tube, a cooling unit for cooling the object heated by the heating unit, a temperature sensor for sensing temperatures of the two temperature regulation plates, and a controller for controlling the heating unit based on the temperature profile acquired in advance and the temperatures detected by the temperature sensor.
Inventors
- 👤 Issei Imahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:29
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/12
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
176 words
A heat treatment apparatus for rapidly heating semiconductor wafers one by one, comprising: a process tube which permits transmitting heat rays; a holding member for holding a wafer to be treated in said process tube; transfer means for moving wafers into and out of said process tube; a temperature regulation plate arranged close to the wafer held by said holding member in a manner to face said wafer for regulating the amount of the heat rays arriving at the wafer; heating means for heating said temperature regulation plate when the wafer is transferred into the process tube by said transfer means; cooling means for cooling the wafer after the heating step performed by said heating means; temperature detecting means for detecting the temperature of the temperature regulation plate; and control means for controlling said heating means in the heating step based on temperature profiles (changes with time in temperature) of the temperature regulation plate and a dummy wafer, said temperature profiles being determined and stored in advance, and the detected temperature of the temperature regulation plate.
Claim 2
Dependent Claim
176 words
A heat treatment apparatus for rapidly heating semiconductor wafers one by one, comprising: a process tube which permits transmitting heat rays; a holding member for holding a wafer to be treated in said process tube; transfer means for moving wafers into and out of said process tube; a temperature regulation plate arranged close to the wafer held by said holding member in a manner to face said wafer for regulating the amount of the heat rays arriving at the wafer; heating means for heating said temperature regulation plate when the wafer is transferred into the process tube by said transfer means; cooling means for cooling the wafer after the heating step performed by said heating means; temperature detecting means for detecting the temperature of the temperature regulation plate; and control means for controlling said heating means in the heating step based on temperature profiles (changes with time in temperature) of the temperature regulation plate and a dummy wafer, said temperature profiles being determined and stored in advance, and the detected temperature of the temperature regulation plate.
Claim 3
Dependent Claim
36 words
The heat treatment apparatus according to claim 1, wherein said temperature regulation means has two plates facing both sides of the object, respectively, in such a manner that the object is interposed between said two plates.
Claim 4
Dependent Claim
29 words
The heat treatment apparatus according to claim 1, wherein said temperature regulation means is made of a material which is easy to absorb infrared rays having a long wavelength.
Claim 5
Dependent Claim
29 words
The heat treatment apparatus according to claim 1, wherein said temperature regulation means is made of a material selected from the group consisting of silicon carbide, graphite, and silicon.
Claim 6
Dependent Claim
18 words
The heat treatment apparatus according to claim 1, wherein said process tube is made of substantially transparent quartz.
Claim 7
Dependent Claim
15 words
The heat treatment apparatus according to claim 1, wherein said temperature regulation means generates heat.
Claim 8
Dependent Claim
18 words
The heat treatment apparatus according to claim 1, wherein said temperature regulation means includes a resistance heating element.
Claim 9
Dependent Claim
49 words
The heat treatment apparatus according to claim 1, wherein said control means controls said heating means based on the temperature profile of said temperature regulation plate such that the temperature regulation plate is heated to a temperature higher than a target temperature of the wafer in the heating step.
Claim 10
Dependent Claim
39 words
The heat treatment apparatus according to claim 1, wherein said control means controls said heating means based on the temperature profile of said temperature regulation plate such that the temperature regulation plate is heated to at least 1,000° C.
Claim 11
Dependent Claim
28 words
The heat treatment apparatus according to claim 1, wherein said temperature regulation plate is disposed at least 2 mm apart from the wafer held by said holding member.
Claim 12
Dependent Claim
33 words
The heat treatment apparatus according to claim 2, wherein one of said temperature regulation plates is controlled by first control means, with the other temperature control plate being controlled by second control means.
Claim 13
Dependent Claim
34 words
The heat treatment apparatus according to claim 4, wherein said temperature regulation plate has a thickness of 0.5 to 5.0 mm and a surface area larger than at least that of an 8-inch wafer.
Claim 14
Dependent Claim
34 words
The heat treatment apparatus according to claim 4, wherein said temperature regulation plate has a thickness of 1.0 to 2.0 mm and a surface area larger than at least that of an 8-inch wafer.
Claim 15
Dependent Claim
45 words
The heat treatment apparatus of claim 9, wherein: said temperature regulation plate is separated from the wafers during heat treatment in a range of 2-40 mm for uniformly transferring heat to the wafers and allowing sufficient room for the wafers to react with process gases.
References Cited (Backward Citations)
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US4554437A
Cited
JPH0234164A
Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-08 | 1998-11-07 | 1999-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-08 | 2002-11-07 | 2003-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-08 | 2006-11-07 | 2007-05-09 | $7700.00 | Window Closed / Lapsed |