US5411909A
Expired / Lapsed
US
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Method of forming a planar thin film transistor
Assignee: Micron Technology Inc
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Filing: 1993-06-23
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Granted: 1995-05-02
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Expires: 2013-06-23
Abstract
Abstract The disclosure includes preferred semiconductor transistor devices utilizing thin film transistors, as well as preferred methods of forming such devices. Specifically, a bottom thin film transistor gate is formed having a top surface. An insulating filler is provided adjacent the thin film transistor gate to an elevation at least as high as the thin film transistor gate top surface, and subsequently levelled to provide generally planar insulating surfaces adjacent the thin film transistor gate. The planar insulating surfaces are substantially coplanar with the thin film transistor gate top surface. A planar semiconductor thin film is then formed over the thin film transistor gate and over the adjacent planar insulating surfaces. The thin film is doped to form source and drain regions of a thin film transistor which is bottom gated by the thin film transistor gate.
Inventors
- 👤 Monte Manning
- 👤 Charles Dennison
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:51
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/125; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
284 words
A method of forming a static random access memory cell on a semiconductor substrate, the method comprising: forming a field isolation region on a semiconductor substrate; forming first and second adjacent transistor gate conductors over the semiconductor substrate adjacent the field isolation region; forming a memory array word line over the field isolation region adjacent one of the transistor gate conductors; implanting the semiconductor substrate to create first and second driver transistors in the semiconductor substrate, the first and second driver transistors being gated by the first and second transistor gate conductors, respectively; applying an etch stop layer over the transistor gate conductors and the adjacent word line; providing an insulating filler over the semiconductor substrate adjacent the transistor gate conductors and the word line to an elevation at least as high as the top surfaces of the transistor gate conductors and the adjacent word line; leveling the insulating filler, the step of leveling being selective to the etch stop layer; removing the etch stop layer from over the transistor gate conductors; leaving the etch stop layer over the word line; forming a first planar semiconductor thin film over the first transistor gate conductor, over the adjacent insulating filler, and at least partially over the word line; doping the first planar semiconductor thin film to form source and drain regions of a first thin film load transistor which is gated from beneath by the first transistor gate conductor; the etch stop layer being positioned between the word line and the overlying first planar semiconductor thin film; the etch stop layer reducing capacitive coupling between the word line and the overlying first planar semiconductor thin film during operation of the static random access memory cell.
Claim 2
Independent Claim
284 words
A method of forming a static random access memory cell on a semiconductor substrate, the method comprising: forming a field isolation region on a semiconductor substrate; forming first and second adjacent transistor gate conductors over the semiconductor substrate adjacent the field isolation region; forming a memory array word line over the field isolation region adjacent one of the transistor gate conductors; implanting the semiconductor substrate to create first and second driver transistors in the semiconductor substrate, the first and second driver transistors being gated by the first and second transistor gate conductors, respectively; applying an etch stop layer over the transistor gate conductors and the adjacent word line; providing an insulating filler over the semiconductor substrate adjacent the transistor gate conductors and the word line to an elevation at least as high as the top surfaces of the transistor gate conductors and the adjacent word line; leveling the insulating filler, the step of leveling being selective to the etch stop layer; removing the etch stop layer from over the transistor gate conductors; leaving the etch stop layer over the word line; forming a first planar semiconductor thin film over the first transistor gate conductor, over the adjacent insulating filler, and at least partially over the word line; doping the first planar semiconductor thin film to form source and drain regions of a first thin film load transistor which is gated from beneath by the first transistor gate conductor; the etch stop layer being positioned between the word line and the overlying first planar semiconductor thin film; the etch stop layer reducing capacitive coupling between the word line and the overlying first planar semiconductor thin film during operation of the static random access memory cell.
Claim 3
Dependent Claim
35 words
A method of forming a static random access memory cell as recited in claim 11, wherein the step of leveling the insulating filler includes chemical mechanical polishing which is selective to the etch stop layer.
Claim 4
Dependent Claim
103 words
A method of forming a static random access memory cell as recited in claim 1, the step of leveling the insulating filler including chemical mechanical polishing which is selective to the etch stop layer, the method further comprising: providing an insulating oxide layer over a portion of the etch stop layer which overlies the word line; the etch stop layer and overlying insulating oxide layer being positioned between the word line and the overlying first planar semiconductor thin film, the etch stop layer and the insulating oxide layer reducing capacitive coupling between the word line and the overlying first planar semiconductor thin film.
Claim 5
Dependent Claim
162 words
A method of forming a static random access memory cell as recited in claim 1 and further comprising: providing a gate oxide layer over the transistor gate conductors and the word line; the etch stop layer being applied over the gate oxide layer; the step of leveling the insulating filler including chemical mechanical polishing which is selective to the etch stop layer; the first planar semiconductor thin film being formed over the gate oxide layer; removing the gate oxide layer from over the second transistor gate conductor, the first planar semiconductor thin film extending over and into electrical contact with the second transistor gate conductor; and leaving the gate oxide layer over the word line, the etch stop layer and the gate oxide layer being positioned between the word line and the overlying first planar semiconductor thin film, the etch stop layer and the gate oxide layer reducing capacitive coupling between the word line and the overlying first planar semiconductor thin film.
Claim 6
Dependent Claim
31 words
A method of forming a static random access memory cell as recited in claim 1 wherein the field isolation region and the semiconductor substrate have upper surfaces which are substantially coplanar.
Claim 7
Independent Claim
344 words
A method of forming a static random access memory cell on a semiconductor substrate, the method comprising: forming a field isolation region on a semiconductor substrate; forming first and second adjacent transistor gate conductors over the semiconductor substrate adjacent the field isolation region, the transistor gate conductors having substantially coplanar top surfaces; forming a memory array word line adjacent one of the transistor gate conductors over the field isolation region, the word line having a top surface which is substantially coplanar with the transistor gate conductor top surfaces; implanting the semiconductor substrate to create first and second driver transistors in the semiconductor substrate, the first and second driver transistors being gated by the first and second transistor gate conductors, respectively; applying an etch stop layer over the transistor gate conductors and the adjacent word line; providing an insulating filler over the semiconductor substrate adjacent the transistor gate conductors and the word line to an elevation at least as high as the top surfaces of the transistor gate conductors and the word line; leveling the insulating filler, the step of leveling being selective to the etch stop layer to provide substantially planar insulating surfaces which are substantially coplanar with the top surfaces of the transistor gate conductors and the word line; removing the etch stop layer from over the transistor gate conductors; leaving the etch stop layer over the word line; forming a first planar semiconductor thin film over the first transistor gate conductor, over the adjacent planar insulating surfaces, at least partially over the coplanar word line, and at least partially over the second transistor gate conductor; doping the first planar semiconductor thin film to form source and drain regions of a first thin film load transistor which is gated from beneath by the first transistor gate conductor; the etch stop layer being positioned between the word line and the overlying first planar semiconductor thin film; the etch stop layer reducing capacitive coupling between the word line and the overlying first planar semiconductor thin film during operation of the static random access memory cell.
Claim 8
Independent Claim
344 words
A method of forming a static random access memory cell on a semiconductor substrate, the method comprising: forming a field isolation region on a semiconductor substrate; forming first and second adjacent transistor gate conductors over the semiconductor substrate adjacent the field isolation region, the transistor gate conductors having substantially coplanar top surfaces; forming a memory array word line adjacent one of the transistor gate conductors over the field isolation region, the word line having a top surface which is substantially coplanar with the transistor gate conductor top surfaces; implanting the semiconductor substrate to create first and second driver transistors in the semiconductor substrate, the first and second driver transistors being gated by the first and second transistor gate conductors, respectively; applying an etch stop layer over the transistor gate conductors and the adjacent word line; providing an insulating filler over the semiconductor substrate adjacent the transistor gate conductors and the word line to an elevation at least as high as the top surfaces of the transistor gate conductors and the word line; leveling the insulating filler, the step of leveling being selective to the etch stop layer to provide substantially planar insulating surfaces which are substantially coplanar with the top surfaces of the transistor gate conductors and the word line; removing the etch stop layer from over the transistor gate conductors; leaving the etch stop layer over the word line; forming a first planar semiconductor thin film over the first transistor gate conductor, over the adjacent planar insulating surfaces, at least partially over the coplanar word line, and at least partially over the second transistor gate conductor; doping the first planar semiconductor thin film to form source and drain regions of a first thin film load transistor which is gated from beneath by the first transistor gate conductor; the etch stop layer being positioned between the word line and the overlying first planar semiconductor thin film; the etch stop layer reducing capacitive coupling between the word line and the overlying first planar semiconductor thin film during operation of the static random access memory cell.
Claim 9
Dependent Claim
35 words
A method of forming a static random access memory cell as recited in claim 6, wherein the step of leveling the insulating filler includes chemical mechanical polishing which is selective to the etch stop layer.
Claim 10
Dependent Claim
112 words
A method of forming a static random access memory cell as recited in claim 6, the step of leveling the insulating filler including chemical mechanical polishing which is selective to the etch stop layer, the method further comprising: providing an insulating oxide layer over a portion of the etch stop layer which overlies the word line; the etch stop layer and overlying insulating oxide layer being positioned between the word line and the overlying first planar semiconductor thin film, the etch stop layer and the insulating oxide layer reducing capacitive coupling between the word line and the overlying first planar semiconductor thin film during operation of the static random access memory cell.
Claim 11
Dependent Claim
171 words
A method of forming a static random access memory cell as recited in claim 6 and further comprising: providing a gate oxide layer over the transistor gate conductors and the word line; the etch stop layer being applied over the gate oxide layer; the step of leveling the insulating filler including chemical mechanical polishing which is selective to the etch stop layer; the first planar semiconductor thin film being formed over the gate oxide layer; removing the gate oxide layer from over the second transistor gate conductor, the first planar semiconductor thin film extending over and into electrical contact with the second transistor gate conductor; and leaving the gate oxide layer over the word line, the etch stop layer and the gate oxide layer being positioned between the word line and the overlying first planar semiconductor thin film, the etch stop layer and the gate oxide layer reducing capacitive coupling between the word line and the overlying first planar semiconductor thin film during operation of the static random access memory cell.
Claim 12
Dependent Claim
31 words
A method of forming a static random access memory cell as recited in claim 6 wherein the field isolation region and the semiconductor substrate have upper surfaces which are substantially coplanar.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-01 | 1998-10-31 | 1999-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-01 | 2002-10-31 | 2003-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-01 | 2006-10-31 | 2007-05-02 | $7700.00 | Window Closed / Lapsed |