US5408130A — Interconnection structure for conductive layers

Claim 1

Independent Claim 258 words

An interconnect structure comprising: a first conductive layer; a first dielectric layer overlying the first conductive layer, the first dielectric layer having an opening where the opening exposes a portion of the first conductive layer and has a first radius, the opening forming a sidewall of the first dielectric layer; a second conductive layer formed overlying the first dielectric layer, the second conductive layer having an opening which is overlies the opening in the first dielectric layer and has an opening center, the second conductive layer having a sidewall which is laterally recessed away from the opening center so that the opening in the second conductive layer has a second radius wherein the second radius is greater than the first radius, the second radius forming a cavity region; a second dielectric layer overlying the second conductive layer, the second dielectric layer having an opening which is self-aligned to the opening in the first dielectric layer and having a third radius which is less than the second radius, the opening forming a sidewall of the second dielectric layer; a sidewall dielectric layer formed adjacent the sidewall of the second conductive layer to fill the cavity and being formed laterally adjacent both the sidewall of the first dielectric layer and the sidewall of the second dielectric layer; and a third conductive layer formed within the opening in the second conductive layer, the third conductive layer making electrical contact to the first conductive layer wherein the third conductive layer is isolated from the second conductive layer by the sidewall dielectric layer.

Claim 2

Dependent Claim 258 words

An interconnect structure comprising: a first conductive layer; a first dielectric layer overlying the first conductive layer, the first dielectric layer having an opening where the opening exposes a portion of the first conductive layer and has a first radius, the opening forming a sidewall of the first dielectric layer; a second conductive layer formed overlying the first dielectric layer, the second conductive layer having an opening which is overlies the opening in the first dielectric layer and has an opening center, the second conductive layer having a sidewall which is laterally recessed away from the opening center so that the opening in the second conductive layer has a second radius wherein the second radius is greater than the first radius, the second radius forming a cavity region; a second dielectric layer overlying the second conductive layer, the second dielectric layer having an opening which is self-aligned to the opening in the first dielectric layer and having a third radius which is less than the second radius, the opening forming a sidewall of the second dielectric layer; a sidewall dielectric layer formed adjacent the sidewall of the second conductive layer to fill the cavity and being formed laterally adjacent both the sidewall of the first dielectric layer and the sidewall of the second dielectric layer; and a third conductive layer formed within the opening in the second conductive layer, the third conductive layer making electrical contact to the first conductive layer wherein the third conductive layer is isolated from the second conductive layer by the sidewall dielectric layer.

Claim 3

Dependent Claim 41 words

The interconnect structure of claim 1 wherein the opening of the first dielectric layer is extended through the first conductive layer to expose an underlying substrate material wherein the third conductive layer is formed in electrical contact with the substrate material.

Claim 4

Dependent Claim 30 words

The interconnect structure of claim 2 further comprising: a doped diffusion region formed within the substrate material, the doped diffusion region being in electrical contact with the third conductive layer.

Claim 5

Dependent Claim 28 words

The interconnect structure of claim 1 further comprising: a silicided layer formed overlying one of: the first conductive layer, the second conductive layer, and the third conductive layer.

Claim 6

Dependent Claim 28 words

The interconnect structure of claim 1 further comprising: a silicided layer formed overlying each of: the first conductive layer, the second conductive layer, and the third conductive layer.

Claim 7

Dependent Claim 255 words

The interconnect structure comprising: a substrate having a surface; N conductive layers formed overlying the substrate wherein N is a positive finite integer greater than one; the N conductive layers being at least partially electrically isolated by dielectric regions; an opening formed through at least one of the N conductive layers to form a sidewall of the at least one of the N conductive layers, a sidewall of a first dielectric region overlying the at least one of the N conductive layers, and a sidewall of a second dielectric region underlying the at least one of the N conductive layers, the opening forming a recessed sidewall of the at least one of the N conductive layers wherein a width of the opening through the at least one of the N conductive layers is greater than a width of the opening through both the first dielectric region and the second dielectric region, the opening exposing at least two of the N conductive layers; a silicided layer overlying each of the N conductive layers; and a connecting conductive layer formed within the opening, the connecting conductive layer being electrically coupled to at least one of the N conductive layers to form said interconnect structure wherein the connecting conductive layer is isolated from the at least one of the N conductive layers by a sidewall dielectric formed laterally adjacent each of the opening through the at least one of the N conductive layers, the sidewall of the first dielectric layer, and the sidewall of the second dielectric layer.

Claim 8

Dependent Claim 255 words

The interconnect structure comprising: a substrate having a surface; N conductive layers formed overlying the substrate wherein N is a positive finite integer greater than one; the N conductive layers being at least partially electrically isolated by dielectric regions; an opening formed through at least one of the N conductive layers to form a sidewall of the at least one of the N conductive layers, a sidewall of a first dielectric region overlying the at least one of the N conductive layers, and a sidewall of a second dielectric region underlying the at least one of the N conductive layers, the opening forming a recessed sidewall of the at least one of the N conductive layers wherein a width of the opening through the at least one of the N conductive layers is greater than a width of the opening through both the first dielectric region and the second dielectric region, the opening exposing at least two of the N conductive layers; a silicided layer overlying each of the N conductive layers; and a connecting conductive layer formed within the opening, the connecting conductive layer being electrically coupled to at least one of the N conductive layers to form said interconnect structure wherein the connecting conductive layer is isolated from the at least one of the N conductive layers by a sidewall dielectric formed laterally adjacent each of the opening through the at least one of the N conductive layers, the sidewall of the first dielectric layer, and the sidewall of the second dielectric layer.

Claim 9

Dependent Claim 51 words

The interconnect structure of claim 6 wherein the opening formed through at least one of the N conductive layers is also formed through each of the N conductive layers to expose the underlying substrate wherein the connecting conductive layer is formed within the opening and is electrically contacted to the substrate.

Claim 10

Dependent Claim 29 words

The interconnect structure of claim 7 further comprising: a doped diffusion region formed within the substrate, the doped diffusion region being in electrical contact with the connecting conductive layer.

Claim 11

Dependent Claim 19 words

The interconnect structure of claim 6 further comprising: a silicided layer formed overlying one of the N conductive layers.

Claim 12

Dependent Claim 31 words

The interconnect structure of claim 6 wherein the silicided layers overlying the N conductive layers are formed containing a material selected from a group consisting of: tungsten, platinum, titanium, and cobalt.

Claim 13

Dependent Claim 20 words

The interconnect structure of claim 6 wherein at least one of the N conductive layers has a laterally recessed sidewall.

Claim 14

Dependent Claim 207 words

An interconnection structure comprising: a substrate having a surface; a first conductive layer overlying the substrate; a second dielectric layer overlying the first conductive layer; a second conductive layer overlying the second dielectric layer, the second conductive layer having a silicided region in direct contact with the second conductive layer; a third conductive layer overlying the second conductive layer; an opening through the third dielectric layer, the opening having a diameter which is less than one micron, the opening also being through the second conductive layer, the portion of the opening which is through the second conductive layer having a diameter which is greater than the portion of the opening formed through the third dielectric layer, the opening also being through the second dielectric layer, the portion of the opening which is through the second dielectric layer having a diameter which substantially equal to the diameter of the portion of the opening formed through the third dielectric layer; a dielectric sidewall region laterally adjacent the second conductive layer and the second dielectric layer; and a third conductive layer within the opening, the third conductive layer making electrical contact to the first conductive layer but being electrically isolated from the second conductive layer by the dielectric sidewall region.

Claim 15

Dependent Claim 207 words

An interconnection structure comprising: a substrate having a surface; a first conductive layer overlying the substrate; a second dielectric layer overlying the first conductive layer; a second conductive layer overlying the second dielectric layer, the second conductive layer having a silicided region in direct contact with the second conductive layer; a third conductive layer overlying the second conductive layer; an opening through the third dielectric layer, the opening having a diameter which is less than one micron, the opening also being through the second conductive layer, the portion of the opening which is through the second conductive layer having a diameter which is greater than the portion of the opening formed through the third dielectric layer, the opening also being through the second dielectric layer, the portion of the opening which is through the second dielectric layer having a diameter which substantially equal to the diameter of the portion of the opening formed through the third dielectric layer; a dielectric sidewall region laterally adjacent the second conductive layer and the second dielectric layer; and a third conductive layer within the opening, the third conductive layer making electrical contact to the first conductive layer but being electrically isolated from the second conductive layer by the dielectric sidewall region.

Claim 16

Dependent Claim 25 words

The interconnection structure of claim 12 wherein the opening is formed through the first conductive layer to form a sidewall of the first conductive layer.

Claim 17

Dependent Claim 22 words

The interconnection structure of claim 12 wherein the opening extends through the first dielectric layer to expose a portion of the substrate.

Claim 18

Dependent Claim 26 words

The interconnection structure of claim 14 wherein a diffusion region is formed within the substrate, the diffusion region being electrically coupled to the third conductive layer.

Claim 19

Dependent Claim 17 words

The interconnection structure of claim 12 wherein the dielectric sidewall region is a dielectric sidewall spacer formation.

Claim 20

Dependent Claim 40 words

The interconnection structure of claim 12 wherein the first conductive layer is made of a material selected from a group consisting of: a metal, a metal alloy, an epitaxial formation, a silicide layer, a salicide layer, and a polysilicon layer.

Claim 21

Dependent Claim 168 words

A n interconnection structure comprising: a substrate; a transistor dielectric layer formed overlying the substrate; a transistor conductive region formed overlying the transistor dielectric layer, the transistor conductive region functioning as a gate electrode; an interconnect layer directly overlying a first portion of the transistor conductive region, a silicide region formed adjacent a portion of the interconnect layer; an opening formed through the interconnect layer and the silicide region to expose a second portion of the transistor conductive region and form a laterally recessed sidewall area of the interconnect layer; a sidewall dielectric formed adjacent the interconnect layer to isolate the sidewall of the interconnect layer by filling the laterally recessed area of the interconnect layer, the sidewall dielectric lying both above and below laterally recessed area of the interconnect layer; and a conductive layer formed within the opening and connected to the transistor conductive region wherein the contact between the conductive layer and the transistor conductive region is isolated from the interconnect layer by the sidewall dielectric.

Claim 22

Dependent Claim 168 words

A n interconnection structure comprising: a substrate; a transistor dielectric layer formed overlying the substrate; a transistor conductive region formed overlying the transistor dielectric layer, the transistor conductive region functioning as a gate electrode; an interconnect layer directly overlying a first portion of the transistor conductive region, a silicide region formed adjacent a portion of the interconnect layer; an opening formed through the interconnect layer and the silicide region to expose a second portion of the transistor conductive region and form a laterally recessed sidewall area of the interconnect layer; a sidewall dielectric formed adjacent the interconnect layer to isolate the sidewall of the interconnect layer by filling the laterally recessed area of the interconnect layer, the sidewall dielectric lying both above and below laterally recessed area of the interconnect layer; and a conductive layer formed within the opening and connected to the transistor conductive region wherein the contact between the conductive layer and the transistor conductive region is isolated from the interconnect layer by the sidewall dielectric.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1998-04-17	1998-10-17	1999-04-18	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2002-04-17	2002-10-17	2003-04-18	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2006-04-17	2006-10-17	2007-04-18	$7700.00	Window Closed / Lapsed

Interconnection structure for conductive layers

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