US5407859A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect transistor with landing pad
Assignee: AT&T Inc
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Filing: 1993-12-01
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Granted: 1995-04-18
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Expires: 2013-12-01
Abstract
Abstract A field effect transistor is fabricated with a window pad layer that is patterned using a patterned dielectric with sublithographic spacing as an etch mask. Desirable attributes of the transistor include small junction capacitance.
Inventors
- 👤 Kuo-Hua Lee
- 👤 Chun-Ting Liu
- 👤 Ruichen Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:32
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/60; H10P; H10P14/00; H10P14/40; H10P14/42; H10P50/00; H10P50/73; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
98 words
A method of making a field effect transistor comprising the steps of: forming the source/drain regions and the gate electrode of said field effect transistor between field oxide regions; depositing a conducting landing pad layer, said layer comprises a conducting nitride; depositing a dielectric layer; depositing a layer resist; patterning said resist to expose selected portions of said dielectric layer over said gate electrode and said field oxide regions; removing said exposed portions of said dielectric layer to expose portions of said conducting landing pad layer; and using said dielectric layer to pattern said conducting landing pad layer.
Claim 2
Independent Claim
98 words
A method of making a field effect transistor comprising the steps of: forming the source/drain regions and the gate electrode of said field effect transistor between field oxide regions; depositing a conducting landing pad layer, said layer comprises a conducting nitride; depositing a dielectric layer; depositing a layer resist; patterning said resist to expose selected portions of said dielectric layer over said gate electrode and said field oxide regions; removing said exposed portions of said dielectric layer to expose portions of said conducting landing pad layer; and using said dielectric layer to pattern said conducting landing pad layer.
Claim 3
Dependent Claim
28 words
A method as recited in claim 1 further comprising the step of: forming dielectric spacers on said patterned dielectric layer prior to pattering said conducting landing pad layer.
Claim 4
Dependent Claim
27 words
A method as recited in claim 2 in which said forming step comprises the steps of depositing a dielectric layer and etching back to form said spacers.
Claim 5
Dependent Claim
57 words
A method as recited in claim 1 comprising the further steps of depositing a dielectric layer over said patterned conducting landing pad layer, and patterning said second dielectric layer to form windows which expose portions of said patterned dielectric layer; and exposing portions of said conducting landing pad layer using said dielectric layer as an etch mask.
Claim 6
Dependent Claim
17 words
A method as recited in claim 4 comprising the further step of depositing metal in said windows.
Claim 7
Dependent Claim
17 words
A method as recited in claim 6 in which said conducting nitride consists essentially of titanium nitride.
Claim 8
Independent Claim
109 words
A method of making a field effect transistor comprising the steps of: forming the source/drain regions and the gate electrode of said field effect transistor between field oxide regions; depositing a conducting landing pad layer; depositing a dielectric layer; depositing a layer of resist; patterning said resist to expose selected portions of said dielectric layer over said gate electrode and said field oxide regions; removing said exposed portions of said dielectric layer to expose portions of said conducting landing pad layer; forming dielectric spacers on said patterned dielectric layer prior to patterning said conducting landing pad layer; and using said dielectric layer to pattern said conducting landing pad layer.
Claim 9
Independent Claim
109 words
A method of making a field effect transistor comprising the steps of: forming the source/drain regions and the gate electrode of said field effect transistor between field oxide regions; depositing a conducting landing pad layer; depositing a dielectric layer; depositing a layer of resist; patterning said resist to expose selected portions of said dielectric layer over said gate electrode and said field oxide regions; removing said exposed portions of said dielectric layer to expose portions of said conducting landing pad layer; forming dielectric spacers on said patterned dielectric layer prior to patterning said conducting landing pad layer; and using said dielectric layer to pattern said conducting landing pad layer.
Claim 10
Dependent Claim
27 words
A method as recited in claim 7 in which said forming steps comprises the steps of depositing a dielectric layer and etching back to form said spacers.
Claim 11
Dependent Claim
56 words
A method as recited in claim 7 comprising the further steps of depositing a dielectric layer over said patterned conducting landing pad layer, and patterning said dielectric layer to form windows which expose portions of said patterned dielectric layer; and exposing portions of said conducting landing pad layer using said dielectric layer as an etch mask.
Claim 12
Dependent Claim
17 words
A method as recited in claim 9 comprising the further step of depositing metal in said windows.
Claim 13
Dependent Claim
19 words
A method as recited in claim 7 in which said conductive landing window pad layer comprises a conducting nitride.
Claim 14
Dependent Claim
17 words
A method as recited in claim 11 in which said conducting nitride consists essentially of titanium nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-17 | 1998-10-17 | 1999-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-17 | 2002-10-17 | 2003-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-17 | 2006-10-17 | 2007-04-18 | $7700.00 | Window Closed / Lapsed |