Patent US5406096A successfully refreshed from Google Patents.
US5406096A
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Device and method for high performance high voltage operation
Assignee: Texas Instruments Inc
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Filing: 1994-02-09
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Granted: 1995-04-11
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Expires: 2014-02-09
Abstract
Abstract A high voltage device (10) having MOS input characteristics. A low voltage MOS transistor (12) is provided which has a source (18), a drain (22), and a gate (25). A high voltage transistor (14) is also provided which has a source (20), a drain (24), and gate (16). The source (18) of the low voltage MOS transistor (12) is connected to the gate (16) of the high voltage transistor (14). The drain (22) of the low voltage MOS transistor (12)is connected to the source (20)of the high voltage transistor The low voltage MOS transistor (12) may have a silicon substrate and the substrate of the high voltage transistor (14)may comprise silicon, silicon carbide, or gallium arsenide.
Inventors
- 👤 Satwinder Malhi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:11
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/10; H03K17/102; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/837; H10D84/839; H10D88/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
118 words
A high voltage device having MOS input characteristics, comprising: a. a low voltage MOS transistor having a turn-on voltage of less than five volts, said low voltage MOS transistor having a silicon substrate, a first source, a first drain, and a first gate; and b. a high voltage transistor having a breakdown voltage greater than fifty volts, said high voltage transistor having a silicon-carbide substrate, a second source, a second drain, and a second gate, wherein said first source is connected to said second gate and said first drain is connected to said second source such that a breakdown voltage of the low voltage MOS transistor is higher than a depletion threshold voltage of the high voltage transistor.
Claim 2
Dependent Claim
118 words
A high voltage device having MOS input characteristics, comprising: a. a low voltage MOS transistor having a turn-on voltage of less than five volts, said low voltage MOS transistor having a silicon substrate, a first source, a first drain, and a first gate; and b. a high voltage transistor having a breakdown voltage greater than fifty volts, said high voltage transistor having a silicon-carbide substrate, a second source, a second drain, and a second gate, wherein said first source is connected to said second gate and said first drain is connected to said second source such that a breakdown voltage of the low voltage MOS transistor is higher than a depletion threshold voltage of the high voltage transistor.
Claim 3
Dependent Claim
18 words
The device of claim 1, wherein said high voltage transistor comprises a depletion mode junction field effect transistor.
Claim 4
Dependent Claim
18 words
The device of claim 1, wherein said high voltage transistor comprises a depletion mode MOS field effect transistor.
Claim 5
Dependent Claim
15 words
The device of claim 1, wherein said high voltage transistor comprises a depletion mode MESFET.
Claim 6
Dependent Claim
17 words
The device of claim 1, wherein said high voltage transistor comprises a depletion mode static induction transistor.
Claim 7
Dependent Claim
30 words
The device of claim 1 further comprising a wire bond between said first source and said second gate and a solder layer between said first drain and said silicon-carbide substrate.
Claim 8
Dependent Claim
118 words
A high voltage device having MOS input characteristics, comprising: e. a low voltage MOS transistor having a turn-on voltage of less than five volts, said low voltage MOS transistor having a silicon substrate, a first source, a first drain, and a first gate; and f. a high voltage transistor having a breakdown voltage greater than fifty volts, said high voltage transistor having a gallium-arsenide substrate, a second source, a second drain, and a second gate, wherein said first source is connected to said second gate and said first drain is connected to said second source such that a breakdown voltage of the low voltage MOS transistor is higher than a depletion threshold voltage of the high voltage transistor.
Claim 9
Dependent Claim
118 words
A high voltage device having MOS input characteristics, comprising: e. a low voltage MOS transistor having a turn-on voltage of less than five volts, said low voltage MOS transistor having a silicon substrate, a first source, a first drain, and a first gate; and f. a high voltage transistor having a breakdown voltage greater than fifty volts, said high voltage transistor having a gallium-arsenide substrate, a second source, a second drain, and a second gate, wherein said first source is connected to said second gate and said first drain is connected to said second source such that a breakdown voltage of the low voltage MOS transistor is higher than a depletion threshold voltage of the high voltage transistor.
Claim 10
Dependent Claim
18 words
The device of claim 7, wherein said high voltage transistor comprises a depletion mode junction field effect transistor.
Claim 11
Dependent Claim
18 words
The device of claim 7, wherein said high voltage transistor comprises a depletion mode MOS filed effect transistor.
Claim 12
Dependent Claim
15 words
The device of claim 7, wherein said high voltage transistor comprises a depletion mode MESFET.
Claim 13
Dependent Claim
17 words
The device of claim 7, wherein said high voltage transistor comprises a depletion mode static induction transistor.
Claim 14
Dependent Claim
30 words
The device of claim 7, further comprising a wire bond between said first source and said second gate and a solder layer between said first drain and said gallium-arsenide substrate.
References Cited (Backward Citations)
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