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US5405805A
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Method for forming interconnect structure, insulating films and surface protective films of semiconductor device
Assignee: NEC Corp
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Filing: 1992-09-10
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Granted: 1995-04-11
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Expires: 2012-09-10
Abstract
Abstract A method for forming a multi-level wiring structure for semiconductor devices includes the steps of forming inter-layer insulating films and exposing at least a part of such films to a vapor containing alkoxyfluorosilane. This enables the water content of silicon oxide films to be reduced, the quality thereof to be made higher and the production yield and the reliability of the product to be enhanced. The method for forming an insulating film includes the steps of exposing such film to a vapor containing alkoxyfluorometal as a major component and heat-treating the exposed film. The method for forming a surface protective film includes the steps of forming a silicon oxide film at a temperature of 250° C. at most, applying to such film a coating solution for SOG, heat-treating the film at a temperature of 200° C. at most, exposing the film to a vapor containing alkoxyfluorosilane as a major component, heat-treating at a temperature of 250° C. to form a fluorine-containing silicon oxide film. Then, a silicon nitride film is formed at a temperature not higher than 250° C. At low temperatures not higher than 250° C., the film has a high flatness and no crack develops thereon and no hillock develops on aluminum wirings. All these contribute to the fabrication of highly reliable semiconductor devices.
Inventors
- 👤 Tetsuya Homma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/096; H10W20/097; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
36 words
A method for forming a multi-level wiring structure for use in semiconductor devices comprising the steps of: forming interlayer insulating films; and exposing at least a part of said interlayer insulating films to an alkoxyfluorosilane vapor.
Claim 2
Independent Claim
36 words
A method for forming a multi-level wiring structure for use in semiconductor devices comprising the steps of: forming interlayer insulating films; and exposing at least a part of said interlayer insulating films to an alkoxyfluorosilane vapor.
Claim 3
Dependent Claim
72 words
A method for forming a multi-level wiring structure for use in semiconductor devices according to claim 1, wherein said step of forming said interlayer insulating films is performed by forming said interlayer insulating films in multi-level relation, said step includes a process of exposing at least one of said interlayer insulating films after the formation thereof to said alkoxyfluorosilane vapor in the course of said step of forming said interlayer insulating films.
Claim 4
Dependent Claim
79 words
A method for forming a multi-level wiring structure for use in semiconductor devices according to claim 1, in which said multi-level wiring structure is composed of an upper level wiring and a lower level wiring, said method includes a process of exposing to said alkoxyfluorosilane vapor after the step of forming a hole reaching said lower level wiring in said interlayer insulating film, said hole being used for connection of said upper level wiring with said lower level wiring.
Claim 5
Dependent Claim
85 words
A method for forming a multi-level wiring structure for use in semiconductor devices according to claim 1, in which said multi-level wiring structure is composed of an upper level wiring and a lower level wiring, said method includes a process of exposing to said alkoxyfluorosilane vapor after the step of forming a hole reaching a diffusion layer provided on a semiconductor substrate in said interlayer insulating film, said hole being used for connection of the wirings of said multi-level wiring substrate with said diffusion layer.
Claim 6
Dependent Claim
32 words
A method for forming a multi-level wiring structure for use in semiconductor devices according to claim 1, in which said interlayer insulating films are composed of silicon dioxide as a major component.
Claim 7
Independent Claim
36 words
A method for forming an insulating film of a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; exposing said insulating film to an alkoxyfluorometal vapor; and heat-treating said exposed film.
Claim 8
Independent Claim
36 words
A method for forming an insulating film of a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; exposing said insulating film to an alkoxyfluorometal vapor; and heat-treating said exposed film.
Claim 9
Dependent Claim
50 words
A method for forming an insulating film of a semiconductor device according to claim 6, in which said insulating film is formed by at least one process selected from the group consisting of chemical vapor deposition process, sputtering process, vacuum evaporation process, coating process, immersion process, and thermal oxidation process.
Claim 10
Dependent Claim
50 words
A method for forming an insulating film of a semiconductor device according to claim 6, in which said insulating film is a film containing as a major component at least one selected from the group consisting of silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, and zirconium oxide.
Claim 11
Dependent Claim
47 words
A method for forming an insulating film of a semiconductor device according to claim 6, in which said insulating film is an organic film containing at least one selected from the group consisting of silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, and zirconium oxide.
Claim 12
Dependent Claim
36 words
A method for treating an insulating film of a semiconductor device according to claim 6, in which said alkoxyfluorometal is at least one selected from the group consisting of alkoxyfluorosilane, alkoxyfluorotantalum, alkoxyfluorozirconium, alkoxyfluorotitanium, alkoxyfluorohafnium, and alkoxyfluoroaluminum.
Claim 13
Independent Claim
185 words
A method for forming a surface protective film on a semiconductor device comprising the steps of: forming a first silicon oxide film on a semiconductor chip having an uppermost level wiring at a temperature of 250° C. at most; applying to said silicon oxide film a coating solution for SOG which is a precursor solution with an alcohol as a solvent, where said precursor is formed by hydrolysis reaction between pure water and tetraalkoxysilane (A), Si(OR) 4 (A) and/or, alkylalkoxysilane (B), R n Si(OR) 4-n (B) where R is an alkyl radical, and n is an integer of 1 to 3; heat-treating said film at a temperature of 200° C. at most to dry; exposing said film to an alkoxyfluorosilane vapor represented by the general chemical formula F m --Si(OR) 4-m where R is an alkyl radical and m is an integer of 1 to 3; heat-treating said film at a temperature of 250° C. at most to form a silicon oxide based glass film; and forming an insulating film at a temperature of 250° C. at most by a plasma-enhanced chemical vapor deposition process.
Claim 14
Independent Claim
185 words
A method for forming a surface protective film on a semiconductor device comprising the steps of: forming a first silicon oxide film on a semiconductor chip having an uppermost level wiring at a temperature of 250° C. at most; applying to said silicon oxide film a coating solution for SOG which is a precursor solution with an alcohol as a solvent, where said precursor is formed by hydrolysis reaction between pure water and tetraalkoxysilane (A), Si(OR) 4 (A) and/or, alkylalkoxysilane (B), R n Si(OR) 4-n (B) where R is an alkyl radical, and n is an integer of 1 to 3; heat-treating said film at a temperature of 200° C. at most to dry; exposing said film to an alkoxyfluorosilane vapor represented by the general chemical formula F m --Si(OR) 4-m where R is an alkyl radical and m is an integer of 1 to 3; heat-treating said film at a temperature of 250° C. at most to form a silicon oxide based glass film; and forming an insulating film at a temperature of 250° C. at most by a plasma-enhanced chemical vapor deposition process.
Claim 15
Dependent Claim
22 words
A method for forming a surface protective film on a semiconductor device according to claim 11, in which said alkoxyfluorosilane is triethoxyfluorosilane.
Claim 16
Dependent Claim
154 words
A method for forming a multi-level wiring structure on a semiconductor substrate as in claim 1, comprising the steps of: forming a lower level wiring; forming an insulating film, which is composed of silicon dioxide as a major component, on said lower level wiring by at least one process selected from the group consisting of chemical vapor deposition process, sputtering process, vacuum evaporation process, spin-coating process, liquid phase deposition process, and thermal oxidation process; forming a hole reaching a surface of diffusion layer provided in said semiconductor substrate and/or said lower level wiring in said interlayer insulating film; treating said interlayer insulating film including inside surface of said hole by exposing to alkoxyfluorosilane represented by general chemical formula F m Si(OR) 4-m where R is an alkyl radical and m is an integer of 1 to 3; and forming an upper level wiring on said interlayer insulating film treated (SiC) said interlayer insulating film.
References Cited (Backward Citations)
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