Patent US5405801A successfully refreshed from Google Patents.
US5405801A
Expired / Lapsed
US
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Method for manufacturing a capacitor of a semiconductor device
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-03-01
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Granted: 1995-04-11
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Expires: 2013-03-01
Abstract
Abstract A method for manufacturing first electrode of a capacitor of a semiconductor device is disclosed. After forming a polycrystalline layer composed of grains with microscopic structure to include an impurity in them, the polycrystalline layer is etched to cut the boundary portions of the grains, thereby allowing the surface of the polycrystalline layer to be rugged. The micro-trenches or micro-pillars are formed by using the oxide layer or an anisotropic etching after exposing the surface of the first rugged polycrystalline layer, and epitaxial grains are formed by epitaxial growth, so that cell capacitance can be further increased. The simple process allows the formation of a reliable semiconductor device having regularity and reproducibility, and capable of increasing and adjusting the cell capacitance easily.
Inventors
- 👤 Ki-man Han
- 👤 Chang-gyu Hwang
- 👤 Dug-Dong Kang
- 👤 Young-jae Choi
- 👤 Joo-young Yoon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 03:59
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/714; H10D1/716; H10P; H10P32/00; H10P32/30; H10P32/302; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P50/71; Y; Y10; Y10S; Y10S148/00; Y10S148/016; Y10S148/138
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
56 words
A method for manufacturing a first electrode of a capacitor for a semiconductor device, comprising the steps of: (a) forming a doped polycrystalline layer on a semiconductor substrate, said doped polycrystalline layer being composed of grains having microscopic-scale structure; and (b) etching said doped polycrystalline layer to make a surface of said doped polycrystalline layer rugged.
Claim 2
Independent Claim
56 words
A method for manufacturing a first electrode of a capacitor for a semiconductor device, comprising the steps of: (a) forming a doped polycrystalline layer on a semiconductor substrate, said doped polycrystalline layer being composed of grains having microscopic-scale structure; and (b) etching said doped polycrystalline layer to make a surface of said doped polycrystalline layer rugged.
Claim 3
Dependent Claim
36 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 1, further comprising a step of patterning said polycrystalline layer, performed after said step of forming said polycrystalline layer.
Claim 4
Dependent Claim
58 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 1, wherein before said etching step to make said surface of said polycrystalline layer rugged, said method further comprises the steps of: (a) growing an oxide layer on the surface of the rugged polycrystalline layer; and (b) removing said oxide layer.
Claim 5
Dependent Claim
57 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 1, wherein after said etching step to make the surface of said polycrystalline layer rugged, said method further comprises the steps of: (a) growing an oxide layer on the surface of the polycrystalline layer; and (b) removing said oxide layer.
Claim 6
Dependent Claim
106 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 1, wherein after said etching step to make the surface of said polycrystalline layer rugged, said method further comprises the steps of: (a) growing an oxide layer on said polycrystalline layer; (b) anisotropically etching said oxide layer to leave said oxide layer in depressions formed in the polycrystalline layer between said constituent grains, thereby forming a mask composed of said oxide; and (c) forming at least one micro-trench in said polycrystalline layer by anisotropically etching said rugged polycrystalline layer, using said mask composed of said oxide as an etch-mask.
Claim 7
Dependent Claim
40 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 5, wherein a depth to which said rugged polycrystalline layer is etched is no greater than the thickness of said rugged polycrystalline layer.
Claim 8
Dependent Claim
105 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 1, wherein after said step of making the surface of said polycrystalline layer rugged, said method further comprises the steps of: (a) growing an oxide layer on said polycrystalline layer; (b) anisotropically etching said oxide layer to leave said oxide in depressions formed in the polycrystalline layer between said constituent grains, thereby forming an epitaxial mask composed of said oxide; (c) epitaxially growing a silicon grain on the exposed portion of said rugged polycrystalline layer, using said mask composed of the oxide material; and (d) removing said mask.
Claim 9
Dependent Claim
32 words
A method for manufacturing first electrode of a capacitor of a semiconductor device according to claim 1, wherein said polycrystalline layer is doped with an impurity when said polycrystalline layer is deposited.
Claim 10
Dependent Claim
32 words
A method for manufacturing first electrode of a capacitor of a semiconductor device according to claim 1, wherein said polycrystalline layer is doped with an impurity after said polycrystalline layer is deposited.
Claim 11
Dependent Claim
29 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 8, further comprising a step of doping said rugged doped polycrystalline layer.
Claim 12
Dependent Claim
29 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 9, further comprising a step of doping said rugged doped polycrystalline layer.
Claim 13
Dependent Claim
44 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 1, wherein said step of etching said polycrystalline layer to make it rugged is carried out using an etchant which has an affinity for etching said impurity.
Claim 14
Dependent Claim
34 words
A method for manufacturing first electrode of a capacitor of a semiconductor device according to claim 12, wherein a phosphorus ion is used as said impurity, and phosphoric acid is used as said etchant.
Claim 15
Dependent Claim
27 words
A method for manufacturing first electrode of a capacitor of a semiconductor device according to claim 3, wherein said oxide layer is formed by chemical vapor deposition.
Claim 16
Dependent Claim
28 words
A method for manufacturing first electrode of a capacitor of a semiconductor device according to claim 3, wherein said oxide layer is formed by a heat treatment step.
Claim 17
Dependent Claim
42 words
A method for manufacturing a capacitor of a semiconductor device according to claim 1, wherein said polycrystalline layer is made from a material selected from the group consisting of a polycrystalline silicon, an amorphous silicon, and a polycrystalline silicon having hemispherical grains.
Claim 18
Dependent Claim
32 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 1, wherein said first electrode is adapted to stacked, trench, and a stacked-trench type capacitors.
Claim 19
Independent Claim
93 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device comprising the steps of: (a) forming a polycrystalline layer having a rugged surface on a semiconductor substrate; (b) forming an oxide layer on said polycrystalline layer; (c) anisotropically etching :said oxide layer to leave portion of said oxide between said grains constituting said polycrystalline layer, thereby forming a mask composed of said oxide; and (d) forming a micro-trench in said polycrystalline layer by anisotropically etching said rugged polycrystalline layer, using said mask composed of said oxide as an etch-mask.
Claim 20
Independent Claim
93 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device comprising the steps of: (a) forming a polycrystalline layer having a rugged surface on a semiconductor substrate; (b) forming an oxide layer on said polycrystalline layer; (c) anisotropically etching :said oxide layer to leave portion of said oxide between said grains constituting said polycrystalline layer, thereby forming a mask composed of said oxide; and (d) forming a micro-trench in said polycrystalline layer by anisotropically etching said rugged polycrystalline layer, using said mask composed of said oxide as an etch-mask.
Claim 21
Dependent Claim
40 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device according to claim 18, wherein a depth to which said rugged polycrystalline layer is etched is no greater than the thickness of said rugged polycrystalline layer.
Claim 22
Independent Claim
92 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device comprising the steps of: (a) forming a polycrystalline layer having a rugged surface on a semiconductor substrate; (b) forming an oxide layer on said polycrystalline layer; (c) anisotropically etching said oxide layer formed on the resultant structure to leave said oxide between said grains constituting said polycrystalline layer, thereby forming an epitaxial mask composed of the oxide material; and (d) growing an epitaxial grain on a portion of said rugged polycrystalline layer not covered by said epitaxial mask.
Claim 23
Independent Claim
92 words
A method for manufacturing a first electrode of a capacitor of a semiconductor device comprising the steps of: (a) forming a polycrystalline layer having a rugged surface on a semiconductor substrate; (b) forming an oxide layer on said polycrystalline layer; (c) anisotropically etching said oxide layer formed on the resultant structure to leave said oxide between said grains constituting said polycrystalline layer, thereby forming an epitaxial mask composed of the oxide material; and (d) growing an epitaxial grain on a portion of said rugged polycrystalline layer not covered by said epitaxial mask.
Claim 24
Dependent Claim
46 words
A method for manufacturing first electrode of a capacitor of a semiconductor device according to claim 20, wherein said step of growing said epitaxial grain is carried out using a SiH 2 Cl 2 +HCl system as a source and a hydrogen gas as a carrier.
Claim 25
Dependent Claim
47 words
A method for manufacturing a first electrode of a capacitor for a semiconductor device according to claim 1, wherein said step of forming said doped polycrystalline layer comprises the steps of: (a) forming a polycrystalline layer; (b) doping said polycrystalline layer to form said doped polycrystalline layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |